The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence a...The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos. 11179003,10975164,10805062 and 11005134)
文摘The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.
