基于振动法进行GIL击穿性放电定位方法的研究

研究了GIL发生击穿性放电时对母线外壳表面产生振动信号的特征,以及使用振动信号进行GIL发生击穿性放电定位的方法及机理。对振动传感器的选型、振动信号的数据采集、振动信号的传输通信机制、振动信号处理的关键算法、传输与分析的软硬件设计和上位机设计进行了较为详细的描述。

辅助放电针对气体间隙直流自击穿特性的影响

为降低气体放电间隙直流条件下自击穿电压分散性,尽可能不影响其自击穿电压,基于环形电极放电间隙,设计了一种在阴极中心植入辅助放电针的辅助放电电极结构。通过电场仿真,研究了辅助放电针直径、长度和顶部倒角对放电间隙场畸变的影响。实验研究了放电间隙无辅助放电针和植入辅助放电针后,其在干燥空气和SF_(6)气体中的直流自击穿特性。结果表明:辅助放电针直径越小、长度越长,电极环对其电场屏蔽作用越弱,放电间隙场畸变强度越大;辅助放电针对SF_(6)气体放电间隙直流自击穿电压影响较小,随着场畸变系数的增大,同一气压下干燥空气自击穿电压下降百分数为SF_(6)气体自击穿电压下降百分数的2~3倍;辅助放电针对直流条件下干燥空气和SF_(6)气体放电间隙自击穿电压稳定性具有有益作用,分散性减小百分数较无辅助放电针结构均提高约25%。

快前沿直线脉冲变压器多间隙气体开关直流自击穿特性

针对一种用于快前沿直线脉冲变压器（FLTD）的堆栈式多间隙气体开关,研究了电极表面粗糙度、电场不均匀系数、放电电流、气体压强等因素对开关自击穿电压分散性的影响。电极表面粗糙度0.1-0.8μm时,击穿电压平均值没有明显变化,击穿电压分散性小于1.5%;电场不均匀系数为1.20和1.30时,电极烧蚀均匀,开关自击穿电压分散性小于2.0%;放电电流由1.1 kA增加到30.0 kA时,击穿电压的分散性增加了约2倍,电极烧蚀的作用明显增强;工作气压由0.04 MPa增加到0.30 MPa,击穿电压的分散性由1.5%增加到3.6%。初步分析了降低开关自击穿电压分散性的途径和方法。

电容器自愈性击穿的3种探测方法的分析对比

首先,介绍了自愈性试验在电容器质量评估中起到的重要作用,阐述了电容器自愈性击穿的原理和自愈性试验的标准条款要求;然后,分析了自愈性击穿探测的3种试验方法的原理并对其优缺点进行了评估;最后,通过高频试验法的电路原理介绍和试验波形的探测论述了其应用在电容器自愈性试验设备中的优势。

基于可听声的GIL设备交流耐压击穿放电定位研究

为对GIL设备耐压试验时击穿放电点进行准确定位,文中选取110 kV GIS上的一段母线气室,模拟GIL设备开展基于可听声的GIL设备交流耐压击穿放电定位研究,针对GIL设备击穿性放电时可听声信号中的背景噪声,首先综合基于完备总体平均经验模态分解(complete ensemble empirical mode decomposition with adaptive noise,CEEMDAN)和小波阈值算法研究了声信号的去噪方法,并将声音信号中的背景噪声进行去除,然后采用时差法以直达声上升沿为标定时刻进行时延估计,实现放电点的空间定位。测试分析结果表明:所提出的去噪方法能有效抑制GIL击穿性放电时声信号中的噪声干扰,基于可听声的定位方法成功地确定了放电点,定位误差控制在15 cm之内,较好地满足了工程需求。

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Breakdown voltage （Vbd） and charge to breakdown （Qbd） are two parameters often used to evaluate gate oxide reliability. In this paper,we investigate the effects of measurement methods on Vbd and Qbd of the gate oxide of a 0.18μm dual gate CMOS process. Voltage ramps （V-ramp） and current ramps （J-ramp） are used to evaluate gate oxide reliability. The thin and thick gate oxides are all evaluated in the accumulation condition. Our experimental results show that the measurement methods affect Vbd only slightly but affect Qbd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods. From the I-t curve,it can be seen that Qbd obtained using a J-ramp is much bigger than that with a V-ramp. At the same time, the Weibull slopes of Qbd are definitely smaller than those of Vbd. This means that Vbd is more reliable than Qbd, Thus we should be careful to use Qbd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.

Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile

A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.

A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

As the thickness of an SOI layer varies,a minimum breakdown voltage is reached when the thickness is about 2μm. The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant. The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion. In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%. The on-state resistance is lowered by 24 % because of the higher impurity concentration of the SOI surface.

Substrate Hot Holes Injection Induced Breakdown Characteristics of Thin Gate Oxides

A substrate hot holes injection method is used to quantitatively examine the roles of electrons and holes separately in thin gate oxides breakdown.The shift of threshold voltage under different stress is discussed.It is indicated that positive charges are trapped in SiO 2 while hot electrons are necessary for SiO 2 breakdown.The anode holes injection model and the electron traps generation model is linked into a consistent model,describing the oxide wearout as an electron correlated holes trap creation process.The results show that the limiting factor in thin gate oxides breakdown depends on the balance between the amount of injected hot electrons and holes.The gate oxides breakdown is a two step process.The first step is hot electron's breaking Si-O bonds and producing some dangling bonds to be holes traps.Then the holes are trapped and a conducted path is produced in the oxides.The joint effect of hot electrons and holes makes the thin gate oxides breakdown complete.

Prediction of Breakdown Voltage of Asymmetric Linearly-Graded Junction by Equivalent Doping Profile Transformation Method

This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.

Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.

Fabrication of Ultrathin SiO_2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate

Nitrogen implantation in silicon substrate at fixed energy of 35keV and split dose of 10 14～5×10 14cm -2 is performed before gate oxidation.The experiment results indicate that with the increasing of implantation dose of nitrogen,oxidation rate of gate decreases.The retardation in oxide growth is weakened due to thermal annealing after nitrogen implantation.After nitrogen is implanted at the dose of 2×10 14cm -2,initial O 2 injection method which is composed of an O 2 injection/N 2 annealing/main oxidation,is applied for preparation of 3 4nm gate oxide.Compared with the control process,which is composed of N 2 annealing/main oxidation,initial O 2 injection process suppresses leakage current of the gate oxide.But Q bd and HF C-V characteristics are almost identical for the samples fabricated by two different oxidation processes.

Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs

Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.

Laser-induced breakdown spectroscopy characterization of Al in different matrix

Some experimental investigations were carried out with the samples of metal Al and AlCl3 solutions. It is found that the spectrum varies with the change of experimental setup parameters both in Al bulk material and AlCl3 solutions. The temporal evolution properties and the affection of incident laser energy on the laser-induced breakdown spectroscopy (LIBS) signals were also discussed. The lifetime of laser induced plasma in AlCl3 solutions is found to be about 30 ns which is much shorter than in solid materials. Compared with the solid samples, the Al LIBS signals in AlCl3 solutions require higher laser energy. Under the optimized conditions, the detection limit of Al in AlCl3 solution was determined to be around 1000 ppm for the system we used.

Durability of Bridge Expansion Joints with Perforated Dowels Under Traffic Impact Loading

In design phases, expansion joints are required to have movement capacity, bearing capacity for static and dynamic loading, watertight, low noise emission and traffic safety. On the basis of the fact that failure due to dynamic loading is the main reason for the observed damages, attention is focused on the bearing capacity for dynamic loading governed by impact, because it differs from the static loading. In this study, from the viewpoint of durability, experimental studies for dynamic behavior were conducted for aluminium alloy expansion joints with perforated dowels. The validity of the perforated dowels against traffic impact loading was confirmed by both experimental and numerical studies.

Influence of Cathode Plasma on Breakdown Formation in Plasma-Anode Explosive-Emission Source

Breakdown formation in an explosive-emission electron source is related to the interelectrode gap filling with plasma propagating from the cathode and formed at the anode and in the interelectrode gap under the electron beam action. Plasma anode is used to increase the beam current density. Preliminary interelectrode gap filling with plasma in the explosive-emission source decreases the influence of uncontrolled plasma arrival from the anode on the diode processes, promotes current density increase and duration of generated electron beams. The paper considers the influence of the cathode geometry on the breakdown formation in the plasma-anode explosive-emission electron source. The data on obtaining of microsecond electron beams with current density of 30 A/cm^2 and 1.5-2 kA/cm^2 are presented.

Effect of pressure on the performance of plasma synthetic jet actuator

The effects of the ambient air pressure level on the performance of plasma synthetic jet actuator have been investigated through electrical and optical diagnostics.Pressures from 1 atm down to 0.1 atm were tested with a 10 Hz excitation.The discharge measurement demonstrates that there is a voltage range to make the actuator work reliably.Higher pressure level needs a higher breakdown voltage,and a higher discharge current and energy deposition are produced.But when the actuator works with the maximum breakdown voltage,the fraction of the initial capacitor energy delivered to the arc is almost invariable.This preliminary study also confirms the effectiveness of the plasma synthetic jet at low pressure.Indeed,the maximum velocities of the precursor shock and the plasma jet induced by the actuator with maximum breakdown voltage are independent of the ambient pressure level;reach about 530 and 460 m/s respectively.The mass flux of the plasma jet increases with ambient pressure increasing,but the strength of the precursor shock presents a local maximum at 0.6 atm.

Tuning ferroelectricity of polymer blends for flexible electrical energy storage applications

Ferroelectric polymers are the mainstay of advanced flexible electronic devices.How to tailor the ferroelectric polymer films for various applications via simple processing approaches is challenging.Here we demonstrate the tuning of ferroelectric responses can be achieved in polymer blends of poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))and polymethyl methacrylate(PMMA)prepared via a simple two-step process.The proposed two-step process endows the polymer blends with a random distribution of P(VDF-TrFE)crystalline phase,hence decoupling the coherent ferroelectric domain interactions between continuous ordered crystalline phases that ubiquitously existed in common P(VDF-TrFE)film.The incorporation of the miscible non-crystalline PMMA chains with low-polarity results in reversal dipoles and a transition from ferroelectric to antiferroelectric-like behavior,overcoming the trade-off between the polarization and depolarization fields.In particular,resultant excellent mechanical and electrical properties of the polymer blend films give rise to remarkably improved breakdown strength and energy storage performance,surpassing P(VDF-TrFE)and commercial biaxial-oriented polypropylene films.This work provides a simple and effective strategy to tailor the ferroelectric response of polymeric materials with great potential for flexible electrical energy storage applications.

Suicide bomb attack causing penetrating craniocerebral injury

Penetrating cerebral injuries caused by foreign bodies are rare in civilian neurosurgical trauma, al- though there are various reports of blast or gunshot injuries in warfare due to multiple foreign bodies like pellets and nails. In our case, a 30-year-old man presented to neurosurgery clinic with signs and symptoms of right-sided weakness after suicide bomb attack. The skull X-ray showed a single intracranial nail. Small craniotomy was done and the nail was removed with caution to avoid injury to surrounding normal brain tissue. At 6 months＇ follow-up his right- sided power improved to against gravity.