Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristic...Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.展开更多
文摘Asymmetric doping channel （AC） partially depleted （PD） silicon-on-insulator （SOI） devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SO1 device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.
