Using a low coherence interferometry （LCI） model, a comparison of broadband single-Gaussian and multi-Gaussian light sources has been undertaken. For single-Gaussian sources, the axial resolution improves with the s...Using a low coherence interferometry （LCI） model, a comparison of broadband single-Gaussian and multi-Gaussian light sources has been undertaken. For single-Gaussian sources, the axial resolution improves with the source bandwidth, confirming the coherence length relation that the resolution for single Gaussian sources improves with increasing spectral bandwidth. However, narrow bandwidth light sources result in interferograms with overlapping strata peaks and the loss of individual strata information. For multiple-Gaussian sources with the same bandwidth, spectral side lobes increase, reducing A-scan reliability to show accurate layer information without eliminating the side lobes. The simulations show the conditions needed for the resolution of strata information for broadband light sources using both single and multiple Gaussian models. The potential to use the model to study optical coherence tomography （OCT） light sources including super luminescent diodes （SLDs）, as reviewed in this paper, as well as optical delay lines and sample structures could better characterize these LCI and OCT elements. Forecasting misinformation in the interferogram may allow preliminary corrections. With improvement to the LCI-OCT model, more applications are envisaged.展开更多
The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junct...The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.展开更多
The remarkable properties of graphene have shown promise for new perspectives in future electronics, notably for nanometer scale devices. Here we grow graphene epitaxially on an off-axis 4H-SiC（0001） substrate and d...The remarkable properties of graphene have shown promise for new perspectives in future electronics, notably for nanometer scale devices. Here we grow graphene epitaxially on an off-axis 4H-SiC（0001） substrate and demonstrate the formation of periodic arrangement of monolayer graphene on planar （0001） terraces and Bernal bilayer graphene on （1120） nanofacets of SiC. We investigate these lateral superlattices using Raman spectroscopy, atomic force microscopy/ electrostatic force microscopy （AFM/EFM） and X-ray and angle resolved photoemission spectroscopy （XPS/ARPES）. The correlation of EFM and ARPES reveals the appearance of permanent electronic band gaps in AB-stacked bilayer graphene on （1120） SiC nanofacets of 150 meV. This feature is confirmed by density functional theory （DFT） calculations. The charge transfer between the substrate and graphene bilayer results in an asymmetric charge distribution between the top and the bottom graphene layers opening an energy gap. This surface organization can be thus defined as self-organized metal-semiconductor graphene.展开更多
A tunable and switchable dual-wavelength erbium-doped fiber laser(EDFL) based on all-fiber single-mode tapered fiber structure has been demonstrated. By adjusting the variable optical attenuator(VOA), the laser can be...A tunable and switchable dual-wavelength erbium-doped fiber laser(EDFL) based on all-fiber single-mode tapered fiber structure has been demonstrated. By adjusting the variable optical attenuator(VOA), the laser can be switched between the single-wavelength mode and the dual-wavelength mode. When the temperature applied on the tapered fiber structure varies, the pass-band varies and the wavelength of the output laser shifts correspondingly. When the temperature changes from 30 °C to 180 °C, the central wavelength of the EDFL generated by branch A shifts from 1 550.7 nm to 1 560.3 nm, while that of branch B shifts from 1 530.8 nm to 1 540.4 nm, indicating the wavelength interval is tunable. These advantages enable this laser to be a potential candidate for high-capacity wavelength division multiplexing systems and mechanical sensors.展开更多
文摘Using a low coherence interferometry （LCI） model, a comparison of broadband single-Gaussian and multi-Gaussian light sources has been undertaken. For single-Gaussian sources, the axial resolution improves with the source bandwidth, confirming the coherence length relation that the resolution for single Gaussian sources improves with increasing spectral bandwidth. However, narrow bandwidth light sources result in interferograms with overlapping strata peaks and the loss of individual strata information. For multiple-Gaussian sources with the same bandwidth, spectral side lobes increase, reducing A-scan reliability to show accurate layer information without eliminating the side lobes. The simulations show the conditions needed for the resolution of strata information for broadband light sources using both single and multiple Gaussian models. The potential to use the model to study optical coherence tomography （OCT） light sources including super luminescent diodes （SLDs）, as reviewed in this paper, as well as optical delay lines and sample structures could better characterize these LCI and OCT elements. Forecasting misinformation in the interferogram may allow preliminary corrections. With improvement to the LCI-OCT model, more applications are envisaged.
文摘The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.
文摘The remarkable properties of graphene have shown promise for new perspectives in future electronics, notably for nanometer scale devices. Here we grow graphene epitaxially on an off-axis 4H-SiC（0001） substrate and demonstrate the formation of periodic arrangement of monolayer graphene on planar （0001） terraces and Bernal bilayer graphene on （1120） nanofacets of SiC. We investigate these lateral superlattices using Raman spectroscopy, atomic force microscopy/ electrostatic force microscopy （AFM/EFM） and X-ray and angle resolved photoemission spectroscopy （XPS/ARPES）. The correlation of EFM and ARPES reveals the appearance of permanent electronic band gaps in AB-stacked bilayer graphene on （1120） SiC nanofacets of 150 meV. This feature is confirmed by density functional theory （DFT） calculations. The charge transfer between the substrate and graphene bilayer results in an asymmetric charge distribution between the top and the bottom graphene layers opening an energy gap. This surface organization can be thus defined as self-organized metal-semiconductor graphene.
基金supported by the National High Technology Research and Development Program of China(No.2013AA014201)the Tianjin Youth Science Foundation(No.13JCQNJC01800)
文摘A tunable and switchable dual-wavelength erbium-doped fiber laser(EDFL) based on all-fiber single-mode tapered fiber structure has been demonstrated. By adjusting the variable optical attenuator(VOA), the laser can be switched between the single-wavelength mode and the dual-wavelength mode. When the temperature applied on the tapered fiber structure varies, the pass-band varies and the wavelength of the output laser shifts correspondingly. When the temperature changes from 30 °C to 180 °C, the central wavelength of the EDFL generated by branch A shifts from 1 550.7 nm to 1 560.3 nm, while that of branch B shifts from 1 530.8 nm to 1 540.4 nm, indicating the wavelength interval is tunable. These advantages enable this laser to be a potential candidate for high-capacity wavelength division multiplexing systems and mechanical sensors.
