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外层电子总数与价层电子对数的关系——介绍一种快速判断分子几何形状的方法 被引量:2
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作者 高小茵 戚琦 《化学教育》 CAS 2000年第1期38-39,共2页
本文在价层电子对互斥理论的基础上 ,以八隅律为根据 ,提出了一种根据分子中外层电子数之和来求算中心原子的价层电子对数 ,从而推出分子几何形状的方法。克服了 VSEPR法求算价层电子对数目的不足。
关键词 外层电子数 价层电子对数 分子几何形状
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印染技术(连载)
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作者 李瑞恒 《网印工业》 1997年第1期30-31,共2页
前言 目前,各地区乡镇企业办起了不少中、小型印染厂或是其它染整厂。生产品种繁多,其销售主要还是国内,少部分产品通过外贸口销售国外。据某些厂领导讲,当前,提高产品质量,降低成本是当务之急。
关键词 分子化合物 体型高分子 纺织纤维 分子间力 聚合度 印染 提高产品质量 化学纤维 分子几何形状 乡镇企业
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生命螺旋
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作者 李津军 《金属世界》 2001年第2期29-29,共1页
有一种曲线应用得非常广泛,这就是螺旋线。在生活中,应用螺旋线的例子俯拾皆是: 许多瓶子与盖子的结合,靠得就是螺旋,你相对用力,就越拧越紧,而相向用力,则可以松开,
关键词 对数螺旋线 蜗牛壳 螺旋状排列 脱氧核糖 分子几何形状 世界七大奇观 电子显微镜 螺旋状楼梯 线应用 左旋糖
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Size and Shape of Polymer Chain near a Flat Surface
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作者 黄建花 胡慧俊 +1 位作者 蒋文华 韩世钧 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2002年第5期587-591,共5页
The size and the shape of non-reversal random-walking polymerchains near an impenetrable, non- interacting flat surface areinvestigated by means of Monte Carlo simulation on the simple cubiclattice. It was found that ... The size and the shape of non-reversal random-walking polymerchains near an impenetrable, non- interacting flat surface areinvestigated by means of Monte Carlo simulation on the simple cubiclattice. It was found that both size and shape are dependent on thenormal-to-surface distance z_0 of the first segment of chain. We findthat the size and shape of chains, characterized by mean squareradius of gyration and mean asphericity parameter respectively, show similar dependence on distance z_0. 展开更多
关键词 POLYMER geometric constraint size and shape CORRELATION
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“水立方”的神奇外衣
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作者 涂俊文 《小学生导读》 2008年第4期37-37,共1页
"水立方"其实是国家游泳中心,整个建筑是个立方体,身披海蓝色的透明膜外衣,远看就像一方蓝蓝的水,所以叫做"
关键词 水立方 外衣 游泳 气枕 上面 衣料 分子几何形状 温度高 四氟乙烯 薄膜
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Surfactant effect of antimony addition to the morphology of self-catalyzed InAS1-xSbx nanowires 被引量:1
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作者 E. A. Anyebe M K. Rajpalke +3 位作者 T. D. Veal C. J. Jin Z. M. Wang Q. D. Zhuang 《Nano Research》 SCIE EI CAS CSCD 2015年第4期1309-1319,共11页
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is d... The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition. 展开更多
关键词 MBE ANTIMONY SURFACTANT self-catalyzed InAsSb nanowire MORPHOLOGY
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Surface geometry and magnetism of Eu@C_(60) monolayer on Ag(111)
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作者 ZHAO ZhiWei WANG Jing LIU Ying 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第9期1589-1593,共5页
The surface geometry, electronic structure, and magnetism of Eu@C60 monolayer absorbed on Ag(111) have been investigated within the framework of density functional theory. The Eu@C60 monolayer has been constructed on ... The surface geometry, electronic structure, and magnetism of Eu@C60 monolayer absorbed on Ag(111) have been investigated within the framework of density functional theory. The Eu@C60 monolayer has been constructed on Ag(111) substrate by one of the hexagon faces of C60 downward and its mirror plane face parallel to Ag(111). The Eu@C60 monolayer induces a recon- struction of the Ag(111) substrate and the perpendicular distance between the Eu@C60 and Ag(111) surface is 2.06 A, being shorter than that between C60 and Ag(lll) surface by 0.05A. There is no chemical bond formed between the Eu@C60 and Ag(111), and only 0.55e transferred from Ag(111) to Eu@C60. A large magnetic moment about 6.80/μB per unit cell is found for Eu@C60/Ag(111) system. 展开更多
关键词 endohedral fullerene two-dimensional C60 domain magnetic organic molecule
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