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分子束外延δ掺杂研究
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作者 张允强 彭正夫 +1 位作者 高翔 孙娟 《半导体情报》 1991年第6期42-44,共3页
用分子束外延生长了δ掺杂结构,并用电化学C-V和汞探针C-V测量了载流子的分布特性,其半峰宽约85(?)。δ掺杂用于AlGaAs/GaAs调制掺杂异质结,在77K具有较好的输运特性。
关键词 分子带外延 异质结 掺杂
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MBE GaAs/GaP(001)外延层的光学和结构性质
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作者 王春艳 孔梅影 +2 位作者 王玉田 郑海群 曾一平 《半导体情报》 1991年第6期64-66,共3页
利用光荧光和x射线双晶衍射分析方法,研究了MBE GaAs/GaP(001)外延层的能带结构和晶格参数。在外延层厚度大于监界厚度的情况下,GaAs外延层主要受到热膨胀系数不同所引起的张应力作用,这种双轴张应力使其晶格参数和能带结构发生变化。
关键词 分子带外延 GaAs/GaP 光学
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Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires
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作者 HEGuo-min ZHENGYong-mei 《Semiconductor Photonics and Technology》 CAS 2001年第1期1-7,共7页
The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theor... The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions. 展开更多
关键词 Optical gain V-groove quantum wires Hole subband structures
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Electron-plasmon interaction induced plasmonic-polaron band replication in epitaxial perovskite SrIrO_(3) films 被引量:1
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作者 Zhengtai Liu Wanling Liu +12 位作者 Ruixiang Zhou Songhua Cai Yekai Song Qi Yao Xiangle Lu Jishan Liu Zhonghao Liu Zhen Wang Yi Zheng Peng Wang Zhi Liu Gang Li Dawei Shen 《Science Bulletin》 SCIE EI CSCD 2021年第5期433-440,M0003,共9页
Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would tr... Electron-boson interaction is fundamental to a thorough understanding of various exotic properties emerging in many-body physics. In photoemission spectroscopy, photoelectron emission due to photon absorption would trigger diverse collective excitations in solids, including the emergence of phonons,magnons, electron-hole pairs, and plasmons, which naturally provides a reliable pathway to study electron-boson couplings. While fingerprints of electron–phonon/-magnon interactions in this state-ofthe-art technique have been well investigated, much less is known about electron-plasmon coupling,and direct observation of the band renormalization solely due to electron-plasmon interactions is extremely challenging. Here by utilizing integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy, we discover the long sought-after pure electron-plasmon couplinginduced low-lying plasmonic-polaron replica bands in epitaxial semimetallic SrIrO_(3) films, in which the characteristic low carrier concentration and narrow bandwidth combine to provide a unique platform where the electron-plasmon interaction can be investigated kinematically in photoemission spectroscopy. This finding enriches the forms of electron band normalization on collective modes in solids and demonstrates that, to obtain a complete understanding of the quasiparticle dynamics in 5 d electron systems, the electron-plasmon interaction should be considered on equal footing with the acknowledged electron–electron interaction and spin–orbit coupling. 展开更多
关键词 perovskite SrIrO_(3) 5d electron systems Electron-plasmon interaction Replica bands
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