A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region o...A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.展开更多
文摘A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.
