Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and ab...Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.展开更多
Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on...Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on the back side of the Si substrate and PtSi IR focal plane arrays(FPAs) on the front side of the same wafer are monolithically integrated together. The IR response characteristics of the integrated devices are improved greatly.展开更多
文摘Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.
文摘Diffractive 11-phase-level Si microlens arrays are fabricated by a special method, i.e. part-etching. The method can increase focal length of diffractive microlens arrays. By using this method, the microlens arrays on the back side of the Si substrate and PtSi IR focal plane arrays(FPAs) on the front side of the same wafer are monolithically integrated together. The IR response characteristics of the integrated devices are improved greatly.
