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头部刻槽弹体高速侵彻混凝土实验研究
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作者 张博 张丁山 +1 位作者 全嘉林 赵永刚 《兵器装备工程学报》 CAS CSCD 北大核心 2024年第4期154-158,共5页
针对高速侵彻弹体提出了一种全新的花瓣形头部刻槽结构,利用火炮次口径发射实验技术,开展了头部刻槽结构弹体与传统尖卵形头部结构的弹体高速侵彻C80钢混靶侵彻能力的实验研究。结果表明:2种结构弹体以1000 m/s速度正侵彻3 m的C80钢混靶... 针对高速侵彻弹体提出了一种全新的花瓣形头部刻槽结构,利用火炮次口径发射实验技术,开展了头部刻槽结构弹体与传统尖卵形头部结构的弹体高速侵彻C80钢混靶侵彻能力的实验研究。结果表明:2种结构弹体以1000 m/s速度正侵彻3 m的C80钢混靶时,花瓣形头部刻槽弹体相比于尖卵形头部弹体具有更高的截面比动能,因此头部刻槽弹体侵彻余速提升4.49%~11.67%;弹体头部刻槽降低了混凝土碎块对弹体头部的摩擦作用力,导致头部刻槽结构弹体质量损失率为2.61%~2.00%,小于尖卵形头部结构弹体的质量损失率3.19%~3.79%。 展开更多
关键词 高速侵彻 头部槽弹 尖卵形弹 侵蚀 C80钢混靶
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刻槽弹体旋转侵彻铝靶试验与数值模拟 被引量:14
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作者 庞春旭 何勇 +2 位作者 沈晓军 张先锋 郭磊 《弹道学报》 CSCD 北大核心 2015年第1期70-75,共6页
为研究刻槽弹体旋转侵彻作用性能,分析了刻槽弹体旋转侵彻作用过程,在着靶速度400~700m/s范围对刻槽弹体和卵形弹体旋转侵彻铝靶进行了试验研究,利用LS-DYNA动力学软件对刻槽弹体和卵形弹体旋转侵彻过程进行了数值仿真,仿真和试验结果... 为研究刻槽弹体旋转侵彻作用性能,分析了刻槽弹体旋转侵彻作用过程,在着靶速度400~700m/s范围对刻槽弹体和卵形弹体旋转侵彻铝靶进行了试验研究,利用LS-DYNA动力学软件对刻槽弹体和卵形弹体旋转侵彻过程进行了数值仿真,仿真和试验结果吻合较好,表明仿真方法及材料模型的适用性。进行了着靶速度300~700m/s,转速0~1 500r/s条件下的仿真试验。仿真结果表明,旋转对刻槽弹体侵深具有很大的影响,在弹体转速和着靶速度达到合理匹配时,旋转的刻槽弹体可以有效地提高弹体的侵深。 展开更多
关键词 侵彻力学 旋转 槽弹
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刻槽弹体旋转侵彻混凝土效应试验研究 被引量:11
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作者 庞春旭 何勇 +4 位作者 沈晓军 张先锋 李文彬 郭磊 潘绪超 《兵工学报》 EI CAS CSCD 北大核心 2015年第1期46-52,共7页
为研究刻槽弹体旋转侵彻混凝土靶的侵彻性能,利用14.5 mm滑膛枪发射平台,进行了非旋转的卵形弹体与刻槽弹体侵彻砂浆混凝土靶试验研究,同时利用14.5 mm线膛枪发射平台,进行了旋转的卵形弹体和刻槽弹体侵彻砂浆混凝土靶和石灰石混凝土靶... 为研究刻槽弹体旋转侵彻混凝土靶的侵彻性能,利用14.5 mm滑膛枪发射平台,进行了非旋转的卵形弹体与刻槽弹体侵彻砂浆混凝土靶试验研究,同时利用14.5 mm线膛枪发射平台,进行了旋转的卵形弹体和刻槽弹体侵彻砂浆混凝土靶和石灰石混凝土靶试验研究。两种发射平台对比试验结果表明:采用卵形弹体头部刻槽和旋转侵彻的方法,使对混凝土目标的破坏从单一的挤压破坏变为挤压与环向剪切联合作用的破坏模式,达到了减少轴向阻力和提高侵彻威力的作用;相比于砂浆混凝土靶,石灰石混凝土靶具有较强的抗侵彻能力。 展开更多
关键词 兵器科学与技术 侵彻 旋转 槽弹 试验研究
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头部非对称刻槽弹体侵彻混凝土目标性能研究 被引量:7
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作者 邓佳杰 张先锋 +2 位作者 刘闯 庞春旭 王文杰 《兵工学报》 EI CAS CSCD 北大核心 2018年第7期1249-1258,共10页
为进一步提高弹体对混凝土类脆性靶体的破坏能力,提出一种可对混凝土施加轴线压缩与切向剪切联合破坏作用的头部非对称刻槽弹体,并在极坐标下表征非圆截面头部弹体结构。利用准静态柱形空腔膨胀模型,建立轴向压缩-切向剪切联合作用下的... 为进一步提高弹体对混凝土类脆性靶体的破坏能力,提出一种可对混凝土施加轴线压缩与切向剪切联合破坏作用的头部非对称刻槽弹体,并在极坐标下表征非圆截面头部弹体结构。利用准静态柱形空腔膨胀模型,建立轴向压缩-切向剪切联合作用下的准静态柱形空腔膨胀理论模型,推导得到考虑剪切效应的靶体响应力函数。在此基础上,发展了头部非对称刻槽弹体侵彻半无限厚混凝土目标局部相互作用模型。基于前述分析,开展了头部非对称刻槽弹体侵彻半无限混凝土目标系列试验研究。研究结果表明:考虑剪切效应的二维空腔膨胀理论及局部相互作用模型的理论计算结果与试验结果吻合较好;与普通尖卵形弹体相比较,头部非对称刻槽弹体具有较好的侵彻能力,能有效提高侵彻深度。 展开更多
关键词 头部非对称槽弹 混凝土目标 侵彻深度 空腔膨胀理论
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头部对称刻槽弹体侵彻半无限厚铝合金靶实验与理论模型 被引量:4
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作者 邓佳杰 张先锋 +2 位作者 刘闯 王文杰 徐晨阳 《爆炸与冲击》 EI CAS CSCD 北大核心 2018年第6期1231-1240,共10页
在综合考虑弹体结构稳定性及截面比动能的前提下,提出一种介于尖卵形弹体及尖锥形弹体间的头部对称刻槽弹体,以期达到提高侵彻深度的目的。以尖卵形弹体侵彻深度为基准,开展头部对称刻槽弹体侵彻半无限厚铝合金靶实验。在此基础上,推导... 在综合考虑弹体结构稳定性及截面比动能的前提下,提出一种介于尖卵形弹体及尖锥形弹体间的头部对称刻槽弹体,以期达到提高侵彻深度的目的。以尖卵形弹体侵彻深度为基准,开展头部对称刻槽弹体侵彻半无限厚铝合金靶实验。在此基础上,推导得到可描述头部对称刻槽弹体侵彻2A12铝合金靶过程的局部相互作用模型。同时,结合头部对称刻槽弹体侵彻后靶体破坏现象,提出适用于头部对称刻槽弹体的靶体响应力,进而确立头部对称刻槽弹体的侵彻深度模型。实验结果与理论计算表明,头部对称刻槽弹体具有相对于尖卵形弹体更好的侵彻能力。头部对称刻槽弹体侵彻深度提高的原因是弹体头部结构截面比动能增加及其侵彻过程中的靶体弱化效应,其中弱化效应是侵彻深度提高的主控因素。 展开更多
关键词 侵彻机理 侵彻深度 头部对称槽弹 尖楔嵌入模型 局部相互作用模型
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斜侵彻混凝土靶的刻槽弹体的结构响应 被引量:3
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作者 张欣欣 武海军 +1 位作者 黄风雷 皮爱国 《爆炸与冲击》 EI CAS CSCD 北大核心 2019年第3期77-82,共6页
基于刚塑性理论和侵彻载荷理论分析,将刻槽弹体简化为空间自由变截面梁,给出了弹体在侵彻混凝土早期的刚体响应行为,得到了弹体任一截面弯矩、剪力以及屈服函数的分布规律。基于此理论分析,得到了刻槽弹体壁厚、材料屈服强度、初速及倾... 基于刚塑性理论和侵彻载荷理论分析,将刻槽弹体简化为空间自由变截面梁,给出了弹体在侵彻混凝土早期的刚体响应行为,得到了弹体任一截面弯矩、剪力以及屈服函数的分布规律。基于此理论分析,得到了刻槽弹体壁厚、材料屈服强度、初速及倾角对弹体弯曲的影响规律。 展开更多
关键词 槽弹 斜侵彻 混凝土 结构响应
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锡伯文《识字课本》手写字体的复刻研究
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作者 乌泽斯古楞 毕力格巴图 塔拉 《中国民族博览》 2022年第12期124-127,共4页
国内对锡伯文手写字体的复刻研究仍处于起步阶段。本文依据国家标准GB/T 36641—2018《信息技术锡伯文名义字符、变形显现字符和控制字符使用规则》,以锡伯文《识字课本》手写字体为依托,通过对锡伯文《识字课本》的数据采集和资料的数... 国内对锡伯文手写字体的复刻研究仍处于起步阶段。本文依据国家标准GB/T 36641—2018《信息技术锡伯文名义字符、变形显现字符和控制字符使用规则》,以锡伯文《识字课本》手写字体为依托,通过对锡伯文《识字课本》的数据采集和资料的数据化,分别对其字体尺寸、手写笔画规律、笔画部件、字母连接方式等做了分析和归纳,并完成了一套锡伯文手写字体的复刻和设计方法的总结。 展开更多
关键词 锡伯文《识字课本》 手写字 锡伯文字方法
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刻槽弹侵彻混凝土受力模型研究 被引量:5
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作者 张欣欣 武海军 +2 位作者 黄风雷 段卓平 皮爱国 《爆炸与冲击》 EI CAS CSCD 北大核心 2016年第1期75-80,共6页
利用混凝土材料的动态球形空腔膨胀理论,建立了针对刻槽弹体的低速花瓣形受力模型和高速圆孔形受力模型,并采用这两种模型计算了刻槽弹体侵彻混凝土的侵深。结果表明:当初速低于1 000m/s时,运用低速花瓣形受力模型计算得出的侵深和实验... 利用混凝土材料的动态球形空腔膨胀理论,建立了针对刻槽弹体的低速花瓣形受力模型和高速圆孔形受力模型,并采用这两种模型计算了刻槽弹体侵彻混凝土的侵深。结果表明:当初速低于1 000m/s时,运用低速花瓣形受力模型计算得出的侵深和实验值的误差小于11%;当初速高于1 000m/s时,运用高速圆孔形受力模型计算出的侵深和实验值的误差约为20%。综合实验过程和实验误差分析可知,建立的刻槽弹侵彻混凝土受力模型可用于刻槽弹对混凝土的侵彻能力分析。 展开更多
关键词 爆炸力学 低速花瓣形受力模型 高速圆孔形受力模型 槽弹 混凝土靶
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Retrieving reuse component based on semantic
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作者 王燕 陈明 赵建辉 《Journal of Southeast University(English Edition)》 EI CAS 2007年第3期327-332,共6页
According to the current research status of component retrieval, the component description model based on facet classification is improved by adding semantic features. Furthermore, the component retrieval process mode... According to the current research status of component retrieval, the component description model based on facet classification is improved by adding semantic features. Furthermore, the component retrieval process model is put forward by combining the domain ontology with the relative concept match algorithm. A detailed illustration of a component reasoning engine and a component classification engine is given and the component classification algorithm is provided by using the Naive Bayes algorithm based on domain ontology. The experimental results show that the recall ratio and the precision ratio are obviously improved by using the method based on semantics, and demonstrate the feasibility and effectiveness of the proposed method. 展开更多
关键词 domain ontology facet classification naive Bayes algorithm component matching component-based software development
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Nano-Level Electron Beam Lithography
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作者 刘明 陈宝钦 +1 位作者 王云翔 张建宏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第1期24-28,共5页
The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,st... The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm. 展开更多
关键词 electron beam lithography system RESOLUTION overlay accuracy
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Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill
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作者 朱泳 闫桂珍 +4 位作者 王成伟 杨振川 范杰 周健 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期16-21,共6页
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi... A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0~100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance. 展开更多
关键词 deep reactive ion etching electrical isolation trenches bulk microstructures monolithic integration
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《汉魏六朝碑刻异体字典》疏误举正 被引量:1
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作者 张永惠 张涌泉 《语言研究》 CSSCI 北大核心 2022年第1期88-94,共7页
《汉魏六朝碑刻异体字典》是第一部系统汇集和科学整理汉魏六朝碑刻异体字的大型字典,该书材料可靠,字形清晰,收字宏富,释义精审,在碑刻异体字的整理和考辨方面做出了突出贡献。但是由于汉魏六朝时期碑刻文字变异严重,异体众多,该书在... 《汉魏六朝碑刻异体字典》是第一部系统汇集和科学整理汉魏六朝碑刻异体字的大型字典,该书材料可靠,字形清晰,收字宏富,释义精审,在碑刻异体字的整理和考辨方面做出了突出贡献。但是由于汉魏六朝时期碑刻文字变异严重,异体众多,该书在收字和释义方面尚存在一些可斟酌之处。本文择取数例加以讨论,以期为该书的利用和修订提供一些参考。 展开更多
关键词 《汉魏六朝碑字典》 疏误 举正
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掘进侵彻弹形与侵彻混凝土深度演绎过程研究
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作者 郭坚 潘绪超 +2 位作者 何勇 庞春旭 邓佳杰 《弹道学报》 CSCD 北大核心 2015年第2期74-79,共6页
为研究掘进侵彻弹形与深度的演绎过程,运用LS-DYNA动力学软件对不同弹形头部、不同着速下掘进侵彻混凝土过程进行了仿真研究,仿真结果表明:低着速时,带切削刃的钻形掘进侵彻方式可提高侵彻深度;高着速时,卵形弹更具优势;旋转速度为70kr... 为研究掘进侵彻弹形与深度的演绎过程,运用LS-DYNA动力学软件对不同弹形头部、不同着速下掘进侵彻混凝土过程进行了仿真研究,仿真结果表明:低着速时,带切削刃的钻形掘进侵彻方式可提高侵彻深度;高着速时,卵形弹更具优势;旋转速度为70kr/min时,加载速度为350~500m/s时,带切削槽的卵形弹能使侵彻深度最大;在较优加载条件时,切削槽的深度对侵彻深度影响最大,斜度影响次之,切削槽的迎靶面形状对侵彻深度影响最小。试验结果与仿真结果吻合较好。 展开更多
关键词 混凝土 掘进侵彻 槽弹 数值仿真
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Indirect 3D printed ceramic:A literature review 被引量:4
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作者 CAI Jia-wei ZHANG Bai-cheng +2 位作者 ZHANG Mao-hang WEN Yao-jie QU Xuan-hui 《Journal of Central South University》 SCIE EI CAS CSCD 2021年第4期983-1002,共20页
Additive manufacturing(AM),also known as 3D-printing(3DP)technology,is an advanced manufacturing technology that has developed rapidly in the past 40 years.However,the ceramic material printing is still challenging be... Additive manufacturing(AM),also known as 3D-printing(3DP)technology,is an advanced manufacturing technology that has developed rapidly in the past 40 years.However,the ceramic material printing is still challenging because of the issue of cracking.Indirect 3D printing has been designed and drawn attention because of its high manufacturing speed and low cost.Indirect 3D printing separates the one-step forming process of direct 3D printing into binding and material sintering,avoiding the internal stress caused by rapid cooling,making it possible to realize the highquality ceramic component with complex shape.This paper presents the research progress of leading indirect 3D printing technologies,including binder jetting(BJ),stereolithography(SLA),and fused deposition modeling(FDM).At present,the additive manufacturing of ceramic materials is mainly achieved through indirect 3D printing technology,and these materials include silicon nitride,hydroxyapatite functional ceramics,silicon carbide structural ceramics. 展开更多
关键词 indirect 3D printing CERAMIC binder jetting STEREOLITHOGRAPHY fused deposition modeling
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屈赋音义"考──兼以此就正于汤炳正先生
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作者 陆忠发 《荆州师专学报》 1995年第4期35-39,共5页
戴震(字东原)《屈原赋注》书后附《音义》三卷,习惯上称为《屈赋音义》,其作者为何人,有清以来无定说。笔者论定其为戴震作,请略述如下。一、写本与刻本的异同戴震《屈原赋注》,今所见有刻本与写本两种。刻本十二卷(《注》七卷... 戴震(字东原)《屈原赋注》书后附《音义》三卷,习惯上称为《屈赋音义》,其作者为何人,有清以来无定说。笔者论定其为戴震作,请略述如下。一、写本与刻本的异同戴震《屈原赋注》,今所见有刻本与写本两种。刻本十二卷(《注》七卷,书后附《通释》二卷,《音义》三卷... 展开更多
关键词 屈原 戴震 《屈原赋注》 刻体 写本 《屈赋音义》 作者 考证 《离骚》
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Modeling of photolithography process in semiconductor wafer fabrication systems using extended hybrid Petri nets 被引量:2
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作者 周炳海 潘青枝 +1 位作者 王世进 吴斌 《Journal of Central South University of Technology》 EI 2007年第3期393-398,共6页
To describe a semiconductor wafer fabrication flow availably, a new modeling method of extended hybrid Petri nets (EHPNs) was proposed. To model the discrete part and continuous part of a complex photolithography pr... To describe a semiconductor wafer fabrication flow availably, a new modeling method of extended hybrid Petri nets (EHPNs) was proposed. To model the discrete part and continuous part of a complex photolithography process, hybrid Petri nets (HPNs) were introduced. To cope with the complexity of a photolithography process, object-oriented methods such as encapsulation and classifications were integrated with HPN models. EHPN definitions were presented on the basis of HPN models and object-oriented methods. Object-oriented hybrid Petri subnet models were developed for each typical physical object and an EHPN modeling procedure steps were structured. To demonstrate the feasibility and validity of the proposed modeling method, a real wafer photolithography case was used to illustrate the modeling procedure. dynamic modeling of a complex photolithography process effectively The modeling results indicate that the EHPNs can deal with the dynamic modeling of a complex photolithography process effectively. 展开更多
关键词 semiconductor wafer fabrication photolithography process hybrid Petri net object-oriented method
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An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices
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作者 余和军 余金中 陈绍武 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第11期1894-1899,共6页
We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects... We present an all-e-beam lithography (EBL) process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose. 展开更多
关键词 photonic crystal e-beam lithography stitching problem proximity effect correction
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Physical modelling and scale effects of air-water flows on stepped spillways 被引量:5
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作者 CHANSON Hubert GONZALEZ Carlos A. 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2005年第3期243-250,共8页
During the last three decades, the introduction of new construction materials (e.g. RCC (Roller Compacted Concrete), strengthened gabions) has increased the interest for stepped channels and spillways. However stepped... During the last three decades, the introduction of new construction materials (e.g. RCC (Roller Compacted Concrete), strengthened gabions) has increased the interest for stepped channels and spillways. However stepped chute hydraulics is not simple, because of different flow regimes and importantly because of very-strong interactions between entrained air and turbu- lence. In this study, new air-water flow measurements were conducted in two large-size stepped chute facilities with two step heights in each facility to study experimental distortion caused by scale effects and the soundness of result extrapolation to pro- totypes. Experimental data included distributions of air concentration, air-water flow velocity, bubble frequency, bubble chord length and air-water flow turbulence intensity. For a Froude similitude, the results implied that scale effects were observed in both facilities, although the geometric scaling ratio was only Lr=2 in each case. The selection of the criterion for scale effects is a critical issue. For example, major differences (i.e. scale effects) were observed in terms of bubble chord sizes and turbulence levels al- though little scale effects were seen in terms of void fraction and velocity distributions. Overall the findings emphasize that physical modelling of stepped chutes based upon a Froude similitude is more sensitive to scale effects than classical smooth-invert chute studies, and this is consistent with basic dimensional analysis developed herein. 展开更多
关键词 Physical modelling Scale effects Stepped spillways Air entrainment Air-water flow measurements
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Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD
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作者 Z.Khalaj M.Ghoranneviss +2 位作者 S.Nasirilaheghi Z.Ghorannevisb R.Hatakeyama 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第6期689-692,746,共5页
We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical va... We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively. 展开更多
关键词 Nano crystalline diamond Etching gas Hot filament chemical vapor deposition
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Reactive Ion Etching of GaAs,GaSb,InP and InAs in Cl_2/Ar Plasma 被引量:2
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作者 HONGTing ZHANGYong-gang LIUTian-dong 《Semiconductor Photonics and Technology》 CAS 2004年第3期203-207,共5页
Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rat... Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance. 展开更多
关键词 Reactive ion etching Ⅲ-Ⅴ compounds Plasma
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