采用金属Ni作为掩膜,Cl2/BCl3作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对Ga As HEMT背孔工艺进行研究。本文详细研究了ICP功率、反应室压强、Cl2/BCl3流量比以及RF功率对刻蚀速率、刻蚀形貌以及"长草"效应的影响。实...采用金属Ni作为掩膜,Cl2/BCl3作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对Ga As HEMT背孔工艺进行研究。本文详细研究了ICP功率、反应室压强、Cl2/BCl3流量比以及RF功率对刻蚀速率、刻蚀形貌以及"长草"效应的影响。实验结果表明:刻蚀速率随ICP功率、Cl2/BCl3流量、RF功率的增加而增加,但随反应室压强的增加,刻蚀速率先增加后降低;相同RF功率条件下,背孔陡直性受ICP功率、反应室压强以及刻蚀气体流量比的影响十分明显;而RF功率则对背孔"长草"效应有较大影响。通过优化刻蚀条件,在ICP功率为500 W,反应室压强为0.4 Pa,Cl2/BCl3流量为20/5 m L/min,RF功率为120 W的刻蚀条件下,刻蚀背孔陡直性好,侧壁平滑,底部平整,刻蚀速率达到3μm/min。展开更多
Porous silicon （PSi） prepared from Pt metal-assisted chemical etching （MACE） was demonstrated to possess higher hydrosi- lylation efficiency （-57%） than anodized PSi （-11%） by surface reaction with co-undeceny...Porous silicon （PSi） prepared from Pt metal-assisted chemical etching （MACE） was demonstrated to possess higher hydrosi- lylation efficiency （-57%） than anodized PSi （-11%） by surface reaction with co-undecenyl alcohol （UO）. Deconvolution of the SiHx （x = 1-3） stretching bands revealed the abundance of SiH2 species on MaCE PSi was 53%, -10% higher than on ano- dized samples, while both of Sill1 and Sill3 were -5% lower correspondently on MaCE PSi than on anodized samples. The surface SiHx abundances were suggested to account for the higher hydrosilylation efficiency on MaCE PSi. Optimization of Pt-assisted chemical etching parameters suggested a 7-15 nm thick Pt-coating and an etching time of 3-10 min for biochip ap- plications. Scanning electron microscopy images revealed that an isotropic top meso-porous layer was beneficial for hydrosi- lylation and long-term durability under ambient conditions. To end, an example of histidine-tagged protein immobilization and microarray was illustrated. Combining the materials＇ property, surface chemistry, and micro-fabrication technology together, we envision that silicon based biochip applications have a prosperous future.展开更多
文摘采用金属Ni作为掩膜,Cl2/BCl3作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对Ga As HEMT背孔工艺进行研究。本文详细研究了ICP功率、反应室压强、Cl2/BCl3流量比以及RF功率对刻蚀速率、刻蚀形貌以及"长草"效应的影响。实验结果表明:刻蚀速率随ICP功率、Cl2/BCl3流量、RF功率的增加而增加,但随反应室压强的增加,刻蚀速率先增加后降低;相同RF功率条件下,背孔陡直性受ICP功率、反应室压强以及刻蚀气体流量比的影响十分明显;而RF功率则对背孔"长草"效应有较大影响。通过优化刻蚀条件,在ICP功率为500 W,反应室压强为0.4 Pa,Cl2/BCl3流量为20/5 m L/min,RF功率为120 W的刻蚀条件下,刻蚀背孔陡直性好,侧壁平滑,底部平整,刻蚀速率达到3μm/min。
基金the financial support of the National Basic Research Program of China(2013CB922101)the National Natural Science Foundation of China(20827001,91027019,21021062)
文摘Porous silicon （PSi） prepared from Pt metal-assisted chemical etching （MACE） was demonstrated to possess higher hydrosi- lylation efficiency （-57%） than anodized PSi （-11%） by surface reaction with co-undecenyl alcohol （UO）. Deconvolution of the SiHx （x = 1-3） stretching bands revealed the abundance of SiH2 species on MaCE PSi was 53%, -10% higher than on ano- dized samples, while both of Sill1 and Sill3 were -5% lower correspondently on MaCE PSi than on anodized samples. The surface SiHx abundances were suggested to account for the higher hydrosilylation efficiency on MaCE PSi. Optimization of Pt-assisted chemical etching parameters suggested a 7-15 nm thick Pt-coating and an etching time of 3-10 min for biochip ap- plications. Scanning electron microscopy images revealed that an isotropic top meso-porous layer was beneficial for hydrosi- lylation and long-term durability under ambient conditions. To end, an example of histidine-tagged protein immobilization and microarray was illustrated. Combining the materials＇ property, surface chemistry, and micro-fabrication technology together, we envision that silicon based biochip applications have a prosperous future.
