The reaction dynamics of the fluorine atom with vibrationally excited D2(v=1, v=0) was investigated using the crossed beam method. The scheme of stimulated Raman pumping was employed for preparation of vibrationally e...The reaction dynamics of the fluorine atom with vibrationally excited D2(v=1, v=0) was investigated using the crossed beam method. The scheme of stimulated Raman pumping was employed for preparation of vibrationally excited D2 molecules. Contribution from the reaction of spin-orbit excited F*(2P1/2) with vibrationally excited D2 was not found. Reaction of spin-orbit ground F(2P3/2) with vibrationally excited D2 was measured and DF products populated in v'=2, 3, 4, 5 were observed. Compared with the vibrationally ground reaction, DF products from the vibrationally excited reaction of F(2P3/2)+D2(v=1, j=0) are rotationally “hotter”. Differential cross sections at four collision energies, ranging from 0.32 kcal/mol to 2.62 kcal/mol, were obtained. Backward scattering dominates for DF products in all vibrational levels at the lowest collision energy of 0.32 kcal/mol. As the collision energy increases, angular distribution of DF products gradually shifts from backward to sideway. The collision-energy dependence of differential cross section of DF(v’=5) at forward direction was also measured. Forward-scattered signal of DF(v'=5) appears at the collision energy of 1.0 kcal/mol, and becomes dominated at 2.62 kcal/mol.展开更多
The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing t...The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.展开更多
基金supported by the Ministry of Science and Technology (No.2017YFF0104500)the Chinese Academy of Sciences (No.XDB17000000)the National Natural Science Foundation of China (No.21573226, No.21822305)
文摘The reaction dynamics of the fluorine atom with vibrationally excited D2(v=1, v=0) was investigated using the crossed beam method. The scheme of stimulated Raman pumping was employed for preparation of vibrationally excited D2 molecules. Contribution from the reaction of spin-orbit excited F*(2P1/2) with vibrationally excited D2 was not found. Reaction of spin-orbit ground F(2P3/2) with vibrationally excited D2 was measured and DF products populated in v'=2, 3, 4, 5 were observed. Compared with the vibrationally ground reaction, DF products from the vibrationally excited reaction of F(2P3/2)+D2(v=1, j=0) are rotationally “hotter”. Differential cross sections at four collision energies, ranging from 0.32 kcal/mol to 2.62 kcal/mol, were obtained. Backward scattering dominates for DF products in all vibrational levels at the lowest collision energy of 0.32 kcal/mol. As the collision energy increases, angular distribution of DF products gradually shifts from backward to sideway. The collision-energy dependence of differential cross section of DF(v’=5) at forward direction was also measured. Forward-scattered signal of DF(v'=5) appears at the collision energy of 1.0 kcal/mol, and becomes dominated at 2.62 kcal/mol.
基金National Natural Science Foundation of China(No.50277016 and 50577028)the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20050487044)
文摘The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.
