With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compres...With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.展开更多
A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A...A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.展开更多
文摘With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.
文摘A self aligned InGaP/GaAs power HBTs for L band power amplifier with low bias voltage are described.Base emitter metal self aligning,air bridge,and wafer thinning are used to improve microwave power performance.A power HBT with double size of emitter of (3μm×15μm)×12 is fabricated.When the packaged HBT operates in class AB at a collector bias of 3V,a maximum 23dBm output power with 45% power added efficiency is achieved at 2GHz.The results show that the InGaP/GaAs power HBTs have great potential in mobile communication systems operating at low bias voltage.
