A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz cente...A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.展开更多
A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an ...A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit. A compact mi- crostripe line parallel matching network is used to divide and combine the power. By biasing the amplifier at class AB： Vc= 7V, Ic = 230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8. 1GHz.展开更多
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.
文摘A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit. A compact mi- crostripe line parallel matching network is used to divide and combine the power. By biasing the amplifier at class AB： Vc= 7V, Ic = 230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8. 1GHz.
