Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of puls...Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.展开更多
Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of t...Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.展开更多
Molybdenum films were deposited on Corning 7059 glass substrates by DC magnetron sputtering with different working gas pressures and sputtering powers.The structure and morphology,residual stress and adhesion,resistiv...Molybdenum films were deposited on Corning 7059 glass substrates by DC magnetron sputtering with different working gas pressures and sputtering powers.The structure and morphology,residual stress and adhesion,resistivity and optical reflectance of the as-deposited Mo films were investigated.The results show that Mo films deposited with high working gas pressure and low sputtering power have a spherical surface morphology,small grain size,residual compressive stress and a good adhesion,high resistivity and low optical reflectance.With the working gas pressure decreased and the sputtering power increased,Mo films have elongated spindle-shape or diamond flake shape surface morphology,the grain size is increased,with residual stress changed from tensile to compressive,a poor adhesion,resistivity decreased and optical reflectance increased.展开更多
Two benzo[1,2-b:4,5-b￠]dithiophene(BDT)-based small molecule(SM) donor materials with identical conjugated backbones but different substitution groups, named as DRTB-O and DRTB-T, were well explored to demonstrate th...Two benzo[1,2-b:4,5-b￠]dithiophene(BDT)-based small molecule(SM) donor materials with identical conjugated backbones but different substitution groups, named as DRTB-O and DRTB-T, were well explored to demonstrate the influence of the replacement of alkoxy with alkylthienyl on their photovoltaic properties in fullerene-based and fullerene-free organic solar cells(OSCs). The study shows that the two SM donors possess similar absorption spectra and energy levels but different crystalline structures in solid films. The carrier transport property and phase separation morphologies of the blend films have also been fully investigated.By employing PC71 BM as the acceptor, the power conversion efficiency(PCE) of DRTB-O:PC71BM and DRTB-T:PC71BM based devices were 4.91% and 7.08%, respectively. However, by blending with IDIC, the two SM donors exhibited distinctly different photovoltaic properties in fullerene-free OSCs, and the PCE of DRTB-O:IDIC and DRTB-T:IDIC based devices were 0.15% and9.06%, respectively. These results indicate that the replacement of alkoxyl with alkylthienyl in designing SM donor materials plays an important role in the application of fullerene-free OSCs.展开更多
基金supported by the National Key R&D Program of China(2018YFE0115500)the National Natural Science Foundation of China(61704159 and 51975541)+3 种基金Shanxi Province Science Foundation for Youths(201701D221125 and 201801D221199)Program for the Young Academic Leaders of the North University of China(QX201807)the Research Project Supported By Shanxi Scholarship Council of China(2019-066)Shanxi“1331 Project”Key Subject Construction(1331 KSC)。
文摘Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.
基金supported by the National Basic Research Program of China(Nos.2011CBA00705,2011CBA00706 and 2011CBA00707)the National Natural Science Foundation of China(No.61377031)+1 种基金the Natural Science Foundation of Tianjin(No.12JCQNJC01000)the Fundamental Research Funds for the Central Universities
文摘Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.
基金supported by the knowledge innovation program of the Chinese academy of sciences(Grant No.KGCX2-YW-347)
文摘Molybdenum films were deposited on Corning 7059 glass substrates by DC magnetron sputtering with different working gas pressures and sputtering powers.The structure and morphology,residual stress and adhesion,resistivity and optical reflectance of the as-deposited Mo films were investigated.The results show that Mo films deposited with high working gas pressure and low sputtering power have a spherical surface morphology,small grain size,residual compressive stress and a good adhesion,high resistivity and low optical reflectance.With the working gas pressure decreased and the sputtering power increased,Mo films have elongated spindle-shape or diamond flake shape surface morphology,the grain size is increased,with residual stress changed from tensile to compressive,a poor adhesion,resistivity decreased and optical reflectance increased.
基金supported by the Ministry of Science and Technology of China (2014CB643501)the National Natural Science Foundation of China (21325419, 51373181, 91333204, 91633301)
文摘Two benzo[1,2-b:4,5-b￠]dithiophene(BDT)-based small molecule(SM) donor materials with identical conjugated backbones but different substitution groups, named as DRTB-O and DRTB-T, were well explored to demonstrate the influence of the replacement of alkoxy with alkylthienyl on their photovoltaic properties in fullerene-based and fullerene-free organic solar cells(OSCs). The study shows that the two SM donors possess similar absorption spectra and energy levels but different crystalline structures in solid films. The carrier transport property and phase separation morphologies of the blend films have also been fully investigated.By employing PC71 BM as the acceptor, the power conversion efficiency(PCE) of DRTB-O:PC71BM and DRTB-T:PC71BM based devices were 4.91% and 7.08%, respectively. However, by blending with IDIC, the two SM donors exhibited distinctly different photovoltaic properties in fullerene-free OSCs, and the PCE of DRTB-O:IDIC and DRTB-T:IDIC based devices were 0.15% and9.06%, respectively. These results indicate that the replacement of alkoxyl with alkylthienyl in designing SM donor materials plays an important role in the application of fullerene-free OSCs.
