The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching network...The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching networks are adopted to make the impedance of artificial transmission lines connected to the gate and drain change stage by stage gradually, which provides good impedance matching and improves the output power and efficiency. The measurement results show that the amplifier gives an average forward gain of 6 dB from 3 to 16. 5 GHz. In the desired band, the input return loss is typically less than - 9. 5 dB, and the output return loss is better than -8.5 dB. The output power at 1-dB gain compression point is from 3.6 to 10. 6 dBm in the band of 2 to 16 GHz while the power added efficiency （PAE） is from 2% to 12. 5% . The power consumption of the amplifier is 81 mW with a supply of 1.8 V, and the chip area is 0.91 mm × 0.45 mm.展开更多
A digital predistorted class-F power amplifier （PA） using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access （ WC...A digital predistorted class-F power amplifier （PA） using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access （ WCDMA ） applications. Measurement results with the continuous wave （CW） signals indicate that the designed class-F PA achieves a peak power-added efficiency （PAE） of 75. 2% with an output power of 39.4 dBm. The adjacent channel power ratio （ACPR） of the designed PA after digital predistortion （DPD） decreases from -28. 3 and -27. 5 dBc to -51.9 and -54. 0 dBc, respectively, for a 4-carrier 20 MHz WCDMA signal with 7. 1 dB peak to average power ratio （PAPR）. The drain efficiency （DE） of the PA is 37. 8% at an average output power of 33. 3 dBm. The designed power amplifier can be aoolied in the WCDMA system.展开更多
This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellu- lar phones that achieves high efficiency and linearity. The two-stage MMIC integrates the input matching circu...This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellu- lar phones that achieves high efficiency and linearity. The two-stage MMIC integrates the input matching circuits,interstage matching circuits, and active bias circuits in a single chip with size as small as 0.91mm × 0.98mm. The amplifier obtains a power-added efficiency of 43% （15%） and a gain of 28.5dB （24dB） at the high and low operation mode under the 3.4V supply. In addition, the adjacent channel leakage power is below - 45dBc/- 56dBc and - 39dBc/- 50dBc at 1.6MHz/3.2MHz offset in low and high power output modes, respectively, with QPSK modulation. The MMIC offers the potential for low cost production due to small chip size, stable voltage supply, and high performance at the same time.展开更多
基金The National Natural Science Foundation of China(No.61106021)the Postdoctoral Science Foundation of China(No.2015M582541)+1 种基金the Natural Science Foundation of Higher Education Institutions of Jiangsu Province(No.15KJB510020)the Research Fund of Nanjing University of Posts and Telecommunications(No.NY215140,No.NY215167)
文摘The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching networks are adopted to make the impedance of artificial transmission lines connected to the gate and drain change stage by stage gradually, which provides good impedance matching and improves the output power and efficiency. The measurement results show that the amplifier gives an average forward gain of 6 dB from 3 to 16. 5 GHz. In the desired band, the input return loss is typically less than - 9. 5 dB, and the output return loss is better than -8.5 dB. The output power at 1-dB gain compression point is from 3.6 to 10. 6 dBm in the band of 2 to 16 GHz while the power added efficiency （PAE） is from 2% to 12. 5% . The power consumption of the amplifier is 81 mW with a supply of 1.8 V, and the chip area is 0.91 mm × 0.45 mm.
基金The National Natural Science Foundation of China(No.60702163)the National Science and Technology Major Project(No.2010ZX03007-002-01,2011ZX03004-003)
文摘A digital predistorted class-F power amplifier （PA） using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access （ WCDMA ） applications. Measurement results with the continuous wave （CW） signals indicate that the designed class-F PA achieves a peak power-added efficiency （PAE） of 75. 2% with an output power of 39.4 dBm. The adjacent channel power ratio （ACPR） of the designed PA after digital predistortion （DPD） decreases from -28. 3 and -27. 5 dBc to -51.9 and -54. 0 dBc, respectively, for a 4-carrier 20 MHz WCDMA signal with 7. 1 dB peak to average power ratio （PAPR）. The drain efficiency （DE） of the PA is 37. 8% at an average output power of 33. 3 dBm. The designed power amplifier can be aoolied in the WCDMA system.
文摘This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellu- lar phones that achieves high efficiency and linearity. The two-stage MMIC integrates the input matching circuits,interstage matching circuits, and active bias circuits in a single chip with size as small as 0.91mm × 0.98mm. The amplifier obtains a power-added efficiency of 43% （15%） and a gain of 28.5dB （24dB） at the high and low operation mode under the 3.4V supply. In addition, the adjacent channel leakage power is below - 45dBc/- 56dBc and - 39dBc/- 50dBc at 1.6MHz/3.2MHz offset in low and high power output modes, respectively, with QPSK modulation. The MMIC offers the potential for low cost production due to small chip size, stable voltage supply, and high performance at the same time.
