Al-doped ZnO(AZO) has been used as an electron transport and hole blocking buffer layer in inverted organic solar cells(IOSCs). In this paper, the AZO morphology, optical and structural properties and IOSCs performanc...Al-doped ZnO(AZO) has been used as an electron transport and hole blocking buffer layer in inverted organic solar cells(IOSCs). In this paper, the AZO morphology, optical and structural properties and IOSCs performance are investigated as a function of precursor solution concentration from 0.1 mol/L to 1.0 mol/L. We demonstrate that the device with 0.1 mol/L precursor concentration of AZO buffer layers enhances the short-circuit current and the fill factor of IOSCs simultaneously. The resulting device shows that the power conversion efficiency is improved by 35.6% relative to that of the 1.0 mol/L device, due to the improved surface morphology and transmittance(300–400 nm) of AZO buffer layer.展开更多
Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of puls...Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.展开更多
基金supported by the National Natural Science Foundation of China(No.61377031)the Scientific Research Foundation of Zhejiang Ocean University(No.Q1444)
文摘Al-doped ZnO(AZO) has been used as an electron transport and hole blocking buffer layer in inverted organic solar cells(IOSCs). In this paper, the AZO morphology, optical and structural properties and IOSCs performance are investigated as a function of precursor solution concentration from 0.1 mol/L to 1.0 mol/L. We demonstrate that the device with 0.1 mol/L precursor concentration of AZO buffer layers enhances the short-circuit current and the fill factor of IOSCs simultaneously. The resulting device shows that the power conversion efficiency is improved by 35.6% relative to that of the 1.0 mol/L device, due to the improved surface morphology and transmittance(300–400 nm) of AZO buffer layer.
基金supported by the National Key R&D Program of China(2018YFE0115500)the National Natural Science Foundation of China(61704159 and 51975541)+3 种基金Shanxi Province Science Foundation for Youths(201701D221125 and 201801D221199)Program for the Young Academic Leaders of the North University of China(QX201807)the Research Project Supported By Shanxi Scholarship Council of China(2019-066)Shanxi“1331 Project”Key Subject Construction(1331 KSC)。
文摘Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.
