利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频...利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%展开更多
An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
InGaAs/AlGaAs MQW superluminescent LED(SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy(MBE).The power and spectral output characteristics of three kinds of device structures are investi...InGaAs/AlGaAs MQW superluminescent LED(SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy(MBE).The power and spectral output characteristics of three kinds of device structures are investigated.An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.展开更多
日前,MACOM在北京举办的2019电子设计创新大会(EDI CON China)展示了丰富的高性能射频产品组合,包括行业领先的MMIC、二极管、AlGaAs开关、功率放大器、前端模块和氮化镓器件,以及适用于5G连接、无线基站、雷达、测试和测量及工业、科...日前,MACOM在北京举办的2019电子设计创新大会(EDI CON China)展示了丰富的高性能射频产品组合,包括行业领先的MMIC、二极管、AlGaAs开关、功率放大器、前端模块和氮化镓器件,以及适用于5G连接、无线基站、雷达、测试和测量及工业、科学和医疗(ISM)射频应用的全新产品解决方案。MACOM公司无线产品中心资深总监成钢先生,射频和微波解决方案销售总监孟爱国先生接受了本刊编辑的采访。展开更多
文摘利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
基金Sponsored by the National Nature Science Foundation of China(60474026,60477010)
文摘InGaAs/AlGaAs MQW superluminescent LED(SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy(MBE).The power and spectral output characteristics of three kinds of device structures are investigated.An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.
文摘日前,MACOM在北京举办的2019电子设计创新大会(EDI CON China)展示了丰富的高性能射频产品组合,包括行业领先的MMIC、二极管、AlGaAs开关、功率放大器、前端模块和氮化镓器件,以及适用于5G连接、无线基站、雷达、测试和测量及工业、科学和医疗(ISM)射频应用的全新产品解决方案。MACOM公司无线产品中心资深总监成钢先生,射频和微波解决方案销售总监孟爱国先生接受了本刊编辑的采访。
