A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by...A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 10^13 cm^-2 and an energy of 250keV and connected directly to a front-gate n^＋ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted （PD） SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.展开更多
We investigated the vibration of a cleaning robot for hotline insulators, providing a flexible elevating link with a rigid moving link at the end. A Lagrange dynamic model is established based on the assumed mode meth...We investigated the vibration of a cleaning robot for hotline insulators, providing a flexible elevating link with a rigid moving link at the end. A Lagrange dynamic model is established based on the assumed mode method. An approach is proposed to reduce residual vibration of the flexible elevating link by optimizing acceleration of rigid link using the Pontryagin maximum principle (PMP). A numerical solution to the proposed optimization problem including a two-point boundary-value problem (2PBVP) is developed. Residual vibration of the flexible elevating link of the optimal acceleration profile is compared with that of the optimal trapezoid velocity profile. The result shows that the proposed trajectory optimization method can reduce the residual vibration more effectively.展开更多
文摘A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 10^13 cm^-2 and an energy of 250keV and connected directly to a front-gate n^＋ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted （PD） SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.
文摘We investigated the vibration of a cleaning robot for hotline insulators, providing a flexible elevating link with a rigid moving link at the end. A Lagrange dynamic model is established based on the assumed mode method. An approach is proposed to reduce residual vibration of the flexible elevating link by optimizing acceleration of rigid link using the Pontryagin maximum principle (PMP). A numerical solution to the proposed optimization problem including a two-point boundary-value problem (2PBVP) is developed. Residual vibration of the flexible elevating link of the optimal acceleration profile is compared with that of the optimal trapezoid velocity profile. The result shows that the proposed trajectory optimization method can reduce the residual vibration more effectively.
