提出了一种考虑 Schottky结势垒不均匀性和界面层作用的 Si C Schottky二极管 ( SBD)正向特性模型 ,势垒的不均匀性来自于 Si C外延层上的各种缺陷 ,而界面层上的压降会使正向 Schottky结的有效势垒增高 .该模型能够对不同温度下 Si C S...提出了一种考虑 Schottky结势垒不均匀性和界面层作用的 Si C Schottky二极管 ( SBD)正向特性模型 ,势垒的不均匀性来自于 Si C外延层上的各种缺陷 ,而界面层上的压降会使正向 Schottky结的有效势垒增高 .该模型能够对不同温度下 Si C Schottky结正向特性很好地进行模拟 ,模拟结果和测量数据相符 .它更适用于考虑器件温度变化的场合 ,从机理上说明了理想因子、有效势垒和温度的关系 .展开更多
Polycrystalline and epitaxial CoSi 2 films are formed on the n-Si (111) substrates by solid state reaction of the as-deposited Co single-layer and Co/Ti bilayer with Si,respectively at different annealing phase.The C...Polycrystalline and epitaxial CoSi 2 films are formed on the n-Si (111) substrates by solid state reaction of the as-deposited Co single-layer and Co/Ti bilayer with Si,respectively at different annealing phase.The CoSi 2/Si Schottky contacts are measured with the current-voltage and capacitance-voltage (I-V/C-V) techniques within the range of temperature from 90K to room temperature.The measured I-V characteristics have been analyzed with a model based on the inhomogeneity in Schottky barrier height,i.e.,at high temperatures (≥～200K) or low temperatures but with a large bias,the I-V curves can be described by using the thermionic emission theory with a Gaussian distributed barrier height over the whole junction,while at low temperatures and with a small bias,the current is dominated by some small patches with low barrier height.It results in a plateau-like section in the low temperature I-V curves around 10 -7 A.At room temperature,the barrier height of polycrystalline CoSi 2/Si deduced from the I-V curve is about 0 57eV.For epitaxial CoSi 2,the barrier height depends on its final annealing temperature and increases from 0 54eV to 0 60eV with the annealing temperature increasing from 700℃ to 900℃.展开更多
Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si cont...Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.展开更多
文摘提出了一种考虑 Schottky结势垒不均匀性和界面层作用的 Si C Schottky二极管 ( SBD)正向特性模型 ,势垒的不均匀性来自于 Si C外延层上的各种缺陷 ,而界面层上的压降会使正向 Schottky结的有效势垒增高 .该模型能够对不同温度下 Si C Schottky结正向特性很好地进行模拟 ,模拟结果和测量数据相符 .它更适用于考虑器件温度变化的场合 ,从机理上说明了理想因子、有效势垒和温度的关系 .
文摘Polycrystalline and epitaxial CoSi 2 films are formed on the n-Si (111) substrates by solid state reaction of the as-deposited Co single-layer and Co/Ti bilayer with Si,respectively at different annealing phase.The CoSi 2/Si Schottky contacts are measured with the current-voltage and capacitance-voltage (I-V/C-V) techniques within the range of temperature from 90K to room temperature.The measured I-V characteristics have been analyzed with a model based on the inhomogeneity in Schottky barrier height,i.e.,at high temperatures (≥～200K) or low temperatures but with a large bias,the I-V curves can be described by using the thermionic emission theory with a Gaussian distributed barrier height over the whole junction,while at low temperatures and with a small bias,the current is dominated by some small patches with low barrier height.It results in a plateau-like section in the low temperature I-V curves around 10 -7 A.At room temperature,the barrier height of polycrystalline CoSi 2/Si deduced from the I-V curve is about 0 57eV.For epitaxial CoSi 2,the barrier height depends on its final annealing temperature and increases from 0 54eV to 0 60eV with the annealing temperature increasing from 700℃ to 900℃.
文摘Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.
