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化学场效应管氨气传感器的制备及特性研究
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作者 赵明静 谢光忠 +1 位作者 太惠玲 蒋亚东 《传感器世界》 2006年第7期15-17,14,共4页
采用化学氧化聚合法制备了3,4-聚乙撑二氧噻吩(简称PEDT),并运用SEM和红外吸收光谱对其薄膜进行表征;同时将其沉积在N沟道耗尽型无金属栅场效应管上,形成以PEDT膜取代MOSFET栅金属的化学场效应管(ChemFET)气体传感器,研究了其对氨气和... 采用化学氧化聚合法制备了3,4-聚乙撑二氧噻吩(简称PEDT),并运用SEM和红外吸收光谱对其薄膜进行表征;同时将其沉积在N沟道耗尽型无金属栅场效应管上,形成以PEDT膜取代MOSFET栅金属的化学场效应管(ChemFET)气体传感器,研究了其对氨气和温度的敏感特性。研究表明在氨气浓度低于54ppm的情况下,ChemFET的漏电流随着氨气浓度的增加而减小,其变化量(△IDS)随氨气浓度的变化呈线性关系;同时漏电流随着负的衬底电压的增加而减小,随着温度的升高而降低。 展开更多
关键词 PEDT 化学场效应管 氨气传感器
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新型场效应管型湿度传感器阵列的研制
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作者 太惠玲 谢光忠 蒋亚东 《电子测量与仪器学报》 CSCD 2007年第3期66-69,共4页
以BaytronP为敏感材料,利用自组装技术在具有4个单元的无金属栅场效应管阵列上制备了BaytronP/PDDA多层自组装超薄膜,形成了一种以自组装膜取代MOSFET栅金属的化学场效应管型湿度传感器阵列,并对该阵列的湿敏特性进行了测试研究,同时设... 以BaytronP为敏感材料,利用自组装技术在具有4个单元的无金属栅场效应管阵列上制备了BaytronP/PDDA多层自组装超薄膜,形成了一种以自组装膜取代MOSFET栅金属的化学场效应管型湿度传感器阵列,并对该阵列的湿敏特性进行了测试研究,同时设计了广义回归神经网络以进行湿度的预测分析。结果表明,采用1V漏电压下的漏电流值作为网络的输入,并取扩展常数为0.14时,网络的预测结果最好(最小相对误差为1.77%)。 展开更多
关键词 自组装 Baytron P 化学场效应管 湿度传感器 广义回归神经网络
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一种新型气敏传感器的研究 被引量:7
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作者 谢丹 蒋亚东 +3 位作者 姜健壮 吴志明 李言荣 潘伟 《电子学报》 EI CAS CSCD 北大核心 2001年第8期1083-1085,共3页
本文以一种新型有机半导体材料———三明治型稀土金属元素镨双酞菁配合物 (Pr[Pc(OC8H17) 8]2 )为气敏材料 ,利用Langmuir Blodgett(LB)超薄膜技术 ,将Pr[Pc(OC8H17) 8]2 以 1:3的配比与十八烷醇 (OA)的混合LB多层膜(Pr[Pc(OC8H17) 8]2... 本文以一种新型有机半导体材料———三明治型稀土金属元素镨双酞菁配合物 (Pr[Pc(OC8H17) 8]2 )为气敏材料 ,利用Langmuir Blodgett(LB)超薄膜技术 ,将Pr[Pc(OC8H17) 8]2 以 1:3的配比与十八烷醇 (OA)的混合LB多层膜(Pr[Pc(OC8H17) 8]2 /OA)拉制在自行设计的场效应晶体管上 ,形成了一种新型的以LB膜取代通常的MOSFET中栅金属的化学场效应管器件 .将该器件放入NO2 气体中 ,随着气体浓度和LB膜层数的变化 ,器件的漏电流IDS将产生 0 0 5×10 -6A~ 1 5× 10 -6A的变化 ,探测灵敏度可达到 5ppmNO2 。 展开更多
关键词 气体传感器 化学场效应管 MOSFET 二氧化氮 镨双酞菁配合物
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Ladder-like metal oxide nanowires: Synthesis, electrical transport, and enhanced light absorption properties 被引量:4
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作者 Bo Liang Hongtao Huang +6 位作者 Zhe Liu Gui Chen Gang Yu Tao Luo Lei Liao Di Chen Guozhen Shen 《Nano Research》 SCIE EI CAS CSCD 2014年第2期272-283,共12页
Transparent metal oxide nanowires (NWs) have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a... Transparent metal oxide nanowires (NWs) have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition (CVD) method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors (FETs) and photodetectors (PDs) of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode (E-mode), FETs build on ladder-like NWs operate in a depletion mode (D-mode). The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain (FDTD) simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric (TE) and transverse-magnetic (TM) polarization modes, which is in good agreement with the experimental results. 展开更多
关键词 IN2O3 SnO2 NANOWIRES field-effect transistors PHOTODETECTORS finite-differencetime-domain
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Scalable arrays of chemical vapor sensors based on DNA-decorated graphene 被引量:3
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作者 Nicholas J. Kybert Gang Hee Han +3 位作者 Mitchell B. Lerner Eric N. Dattoli Ali Esfandiar A. T. Charlie Johnson 《Nano Research》 SCIE EI CAS CSCD 2014年第1期95-103,共9页
Arrays of chemical vapor sensors based on graphene field effect transistors functionalized with single-stranded DNA have been demonstrated. Standard photolithographic processing was adapted for use on large-area graph... Arrays of chemical vapor sensors based on graphene field effect transistors functionalized with single-stranded DNA have been demonstrated. Standard photolithographic processing was adapted for use on large-area graphene by including a metal protection layer, which protected the graphene from contamination and enabled fabrication of high quality field-effect transistors (GFETs). Processed graphene devices had hole mobilities of 1,640 ± 250 cm2.V-1.s-1 and Dirac voltages of 15 ± 10 V under ambient conditions. Atomic force microscopy was used to verify that the graphene surface remained uncontaminated and therefore suitable for controlled chemical functionalization. Single-stranded DNA was chosen as the functionalization layer due to its affinity to a wide range of target molecules and π-π stacking interaction with graphene, which led to minimal degradation of device characteristics. The resulting sensor arrays showed analyte- and DNA sequence-dependent responses down to parts-per-billion concentrations. DNA/GFET sensors were able to differentiate among chemically similar analytes, including a series of carboxylic acids, and structural isomers of carboxylic acids and pinene. Evidence for the important role of electrostatic chemical gating was provided by the observation of understandable differences in the sensor response to two compounds that differed only by the replacement of a (deprotonating) hydroxyl group by a neutral methyl group. Finally, target analytes were detected without loss of sensitivity in a large background of a chemically similar, volatile compound. These results motivate further development of the DNA/graphene sensor family for use in an electronic olfaction system. 展开更多
关键词 GRAPHENE vapor sensor DNA PHOTOLITHOGRAPHY chemical gating
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Grain size adjustion in organic field-effect transistors for chemical sensing performance improvement 被引量:3
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作者 Xiaohan Wu Rongrong Du +3 位作者 Lu Fang Yingli Chu Zhuo Li Jia Huang 《Science China Materials》 SCIE EI CSCD 2019年第1期138-145,共8页
Various nanostructures of the organic semiconductor (OSC)films have been reported to enhance the organic field-effect transistors (OFETs)sensing performance. However,complicated fabrication processes hinder their ap- ... Various nanostructures of the organic semiconductor (OSC)films have been reported to enhance the organic field-effect transistors (OFETs)sensing performance. However,complicated fabrication processes hinder their ap- plications.In this work,we have effectively enhanced the sensitivity of the OFET-based sensors only by adjusting substrate temperature in OSC preparation and surface treatment of the dielectric layer.The relative sensitivity of the device can be enhanced by 5 times.The flexible sensors with polymer dielectric also exhibit high sensitivity because the less smooth surface of the polymer provides the OSCs with smaller grain size.Therefore,this work reveals the trade-off effects of the OSCs grain size on both transistor characteristic and chemic.al sensing performance,and provides a simple and extensively applicable strategy for OFETs sensitivity improvement. 展开更多
关键词 grain size organic semiconductor OFET chemical sensor performance improvement
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A new type of covalent-functional graphene donor-acceptor hybrid and its improved photoelectrochemical performance 被引量:1
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作者 LIU GuiLin YU CaiLan +3 位作者 CHEN ChunCheng MA WanHong JI HongWei ZHAO JinCai 《Science China Chemistry》 SCIE EI CAS 2011年第10期1622-1626,共5页
Graphene has lots of applications, such as field-effect transistors, solar cells and transparent electrodes. In this work, we developed a new donor-acceptor graphene hybrid by covalently bonding a donor phenanthrene-9... Graphene has lots of applications, such as field-effect transistors, solar cells and transparent electrodes. In this work, we developed a new donor-acceptor graphene hybrid by covalently bonding a donor phenanthrene-9-carboxaldehyde (PCA) onto the acceptor graphene (PCA-graphene) via 1,3-dipolar cycloaddition azomethine ylides. The resulting PCA-graphene is soluble in N,N-dimethyformamide (DMF). The optoelectronic device (photoanode) fabricated by spin-coating DMF solution of the hybrids exhibits an enhanced photocurrent under visible irradiation. 展开更多
关键词 GRAPHENE PHOTOELECTROCHEMICAL DONOR-ACCEPTOR covalent-functional
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