全自动化学抛光机系统设计

针对碲锌镉晶片的化学抛光处理工艺需求,按照全自动工艺处理要求,设计了一套全自动化学抛光设备,实现了自动上下料、自动抛光、自动清洗吹干等工艺步骤,并介绍了全自动化学抛光设备的系统设计及实现。

超声波—电化学抛光技术在模具中的应用

本文详细阐述了超声波—电化学抛光技术的机理、装置、加工特点和应用范围 ,从而提出了模具型腔面抛光的新途径。

Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing

The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes.

Scratching by pad asperities in copper electrochemical-mechanical polishing

Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.

Probing particle removal in brush scrubber cleaning with fluorescence technique

Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velocimetry(PTV)technique was employed to characterize the particle removal displacement and velocity in the interface between a transparent copper film and a porous polyvinyl alcohol(PVA)brush during the cleaning process.Several different cleaning conditions including rotation speeds,loading pressure and cleaning agent were examined and the particle removal rate was compared.Elastic and friction removal,hydrodynamic removal and mixed-type removal are the three types of particle removal.Particles with an arc trace and uniform velocity curves were removed by friction and elastic force which were related to the brush load.Particles with a random trace and fluctuant velocity curves were removed by hydrodynamic force which was determined by the brush rotation speed.The increase of particle removal rate(PRR)with brush rotation speed is a logistic function.It is easier to improve PRR by increasing the brush load or by adding surfactant than by increasing the brush rotation speed.

Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process

A finite element analysis(FEA)model is developed for the chemical-mechanical polishing(CMP)process on the basis of a 12-in five-zone polishing head.The proposed FEA model shows that the contact stress non-uniformity is less dependent on the material property of the membrane and the geometry of the retaining ring.The larger the elastic modulus of the pad,the larger contact stress non-uniformity of the wafer.The applied loads on retaining ring and zone of the polishing head significantly affect the contact stress distribution.The stress adjustment ability of a zone depends on its position.In particular,the inner-side zone has a high stress adjustment ability,whereas the outer-side zone has a low stress adjustment ability.The predicted results by the model are shown to be consistent with the experimental data.Analysis results have revealed some insights regarding the performance of the multi-zone CMP.

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

The chemical mechanical polishing(CMP)technology has been widely used for surface modification of critical materials and components with high quality and efficiency.In a typical CMP process,the mechanical properties of abrasives play a vital role in obtaining the ultra-precision and damage-free surface of wafers for improvement of their performances.In this work,a series of fine structured rod-shaped silica(RmSiO2)-based abrasives with controllable sizes and diverse ordered mesoporous structures were synthesized via a soft template approach,and successfully applied in the sustainable polishing slurry for improving the surface quality of cadmium zinc telluride(CZT)wafers.Compared with commercial silica gel,solid and mesoporous silica spheres,the RmSiO2 abrasives present superior elastic deformation capacity and surface precision machinability on account of their mesoporous structures and rod shapes.Especially,ultra-precision surface roughness and relatively effective material removal speed were achieved by the CMP process using the RmSiO2 abrasives with a length/diameter(L/d)ratio of 1.In addition,a potential CMP mechanism of the developed polishing slurry to CZT wafer was elucidated by analyzing X-ray photoelectron spectra and other characterizations.The proposed interfacial chemical and mechanical effects will provide a new strategy for improving abrasives’machinability and precision manufacture of hard-to-machine materials.