Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier...Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures. It is found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction , and that the Hall mobility is larger than 8 cm 2·V -1 ·s -1 , the carrier concentration is about 1×10 17 cm -1 ～1×10 19 cm -3 at room temperature.展开更多
Bilayer graphene(BLG)shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties.However,the scalable synthesis of large-area high-quality B...Bilayer graphene(BLG)shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties.However,the scalable synthesis of large-area high-quality BLG films is still a great challenge,despite the maturity of chemical vapor deposition(CVD)technique.In this study,we report a robust method to grow BLGs on flat,softened Cu foils by atmospheric pressure CVD.A moderate amount of residual oxygen accelerates the growth of BLG domains while suppressing the formation of multilayers.Raising the nucleation density at low hydrogen pressure efficiently increases the film continuity.Based on the optimized CVD process,the growth of graphene films on 4×4 cm^2 Cu foils with an average BLG coverage of 76%is achieved.The morphology and structure characterizations demonstrate a high quality of the BLG.Dual gate field-effect transistors are investigated based on AB-stacked BLG,with a tunable bandgap and high carrier mobility of up to 6790 cm2 V^−1 s^−1 at room temperature.展开更多
基金The National Science Foundation of China under Grant
文摘Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures. It is found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction , and that the Hall mobility is larger than 8 cm 2·V -1 ·s -1 , the carrier concentration is about 1×10 17 cm -1 ～1×10 19 cm -3 at room temperature.
基金This work was supported by China Postdoctoral Science Foundation(2018M642831)Shenzhen Science and Technology Project(JCYJ20180507183904841).
文摘Bilayer graphene(BLG)shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties.However,the scalable synthesis of large-area high-quality BLG films is still a great challenge,despite the maturity of chemical vapor deposition(CVD)technique.In this study,we report a robust method to grow BLGs on flat,softened Cu foils by atmospheric pressure CVD.A moderate amount of residual oxygen accelerates the growth of BLG domains while suppressing the formation of multilayers.Raising the nucleation density at low hydrogen pressure efficiently increases the film continuity.Based on the optimized CVD process,the growth of graphene films on 4×4 cm^2 Cu foils with an average BLG coverage of 76%is achieved.The morphology and structure characterizations demonstrate a high quality of the BLG.Dual gate field-effect transistors are investigated based on AB-stacked BLG,with a tunable bandgap and high carrier mobility of up to 6790 cm2 V^−1 s^−1 at room temperature.
