InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.展开更多
Chemical modification(CM)and deposition-precipitation(DP)methods were used for the dispersion of active Au nanoparticles on mesoporous silica materials in this work.XRD,TEM,N2 adsorption isotherms and UV-Vis absorptio...Chemical modification(CM)and deposition-precipitation(DP)methods were used for the dispersion of active Au nanoparticles on mesoporous silica materials in this work.XRD,TEM,N2 adsorption isotherms and UV-Vis absorption spectra were used to characterize in detail Au-SBA-15 materials prepared by the two methods. The analysis results showed that high loading(1.7%,by mass)and uniform Au nanoparticles(approximately 3 nm) were dispersed in the channels of mesoporous SBA-15 by the CM method.While for the DP method,most of Au nanoparticles with the size of 10—15nm were aggregated outside of the channels of SBA-15 and the actual loading of Au was only 0.38%(by mass).展开更多
基金Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of ChinaProject(61201028,60876009)supported by the National Natural Science Foundation of China
文摘InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
基金Supported by the National Natural Science Foundation of China （No.20490204）, Shanghai Municipal Science and Technology Commission of China （No.05DJ 14002） and Shanghai Municipal Education Commission of China.
文摘Chemical modification(CM)and deposition-precipitation(DP)methods were used for the dispersion of active Au nanoparticles on mesoporous silica materials in this work.XRD,TEM,N2 adsorption isotherms and UV-Vis absorption spectra were used to characterize in detail Au-SBA-15 materials prepared by the two methods. The analysis results showed that high loading(1.7%,by mass)and uniform Au nanoparticles(approximately 3 nm) were dispersed in the channels of mesoporous SBA-15 by the CM method.While for the DP method,most of Au nanoparticles with the size of 10—15nm were aggregated outside of the channels of SBA-15 and the actual loading of Au was only 0.38%(by mass).
