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ON以新型原子距边矢量ν估计和预测烷烃核磁共振碳谱(^(13)CNMR)化学位移 (CSC)(英文)
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作者 谌其亭 袁晓燕 +3 位作者 曹晨忠 刘树深 刘海玲 李志良 《波谱学杂志》 CAS CSCD 北大核心 2001年第2期175-185,共11页
系统研究了核磁共振碳谱与化学位移和规律 ,以及分子拓扑指数在定量 [结 ]构[波 ]谱关系 (QSSR)中的应用 .本文基于分子路径长度矢量p =(P1,P2 ,P3,… ,Pm)与分子中原子相互作用 ,提出了一种新型原子距边矢量并发现它与烷烃13CNMR化学... 系统研究了核磁共振碳谱与化学位移和规律 ,以及分子拓扑指数在定量 [结 ]构[波 ]谱关系 (QSSR)中的应用 .本文基于分子路径长度矢量p =(P1,P2 ,P3,… ,Pm)与分子中原子相互作用 ,提出了一种新型原子距边矢量并发现它与烷烃13CNMR化学位移有良好线性相关性 ,回归方程及其统计参数为 :CSC =aν +ap3=∑ mj=0 ajνj+a10 p3=a0 (ν0 =1 ) +a1ν1+a2 ν2 +a3ν3+a4ν4+bP3,R >0 .990 ,EV =94 .5% ,RMS <0 .772 ,F =4 9.0 69-351 3.1 8,结果良好 . 展开更多
关键词 原子距边矢量v 化学结构参数化 核磁共振碳谱 化学位移 烷烃 分子建模
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基于新型分子距边矢量ν与多元统计方法对于烷烃^(13)C NMR化学位移和(CSS)估计与预测的深入研究(英文)
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作者 袁晓燕 余丹辉 +3 位作者 刘树深 曹晨忠 谌其亭 李志良 《波谱学杂志》 CAS CSCD 北大核心 2001年第4期363-375,共13页
基于本实验室提出一种新型以势能形式表达的分子距边矢量 ,深入地系统研究了核磁共振碳 -1 3谱化学位移和 (CSS)规律以及分子拓扑指数矢量在定量结构波谱关系(QSSR)中的应用 .借助多种计量化学方法包括多元线性回归、逐步多元回归、主... 基于本实验室提出一种新型以势能形式表达的分子距边矢量 ,深入地系统研究了核磁共振碳 -1 3谱化学位移和 (CSS)规律以及分子拓扑指数矢量在定量结构波谱关系(QSSR)中的应用 .借助多种计量化学方法包括多元线性回归、逐步多元回归、主成分回归、主筛选回归等进行分子拟模和定量相关研究 ,发现烷烃13CNMR化学位移和 (CSS)与其分子距边矢量及路径长度指数有良好线性相关性 ,回归方程及其统计参数为 :CSS=bν +cp3=∑mj=0bjνj+b11p3=b0 ν+b1ν1+b2 ν2 +b3ν3+b4ν4+b5 ν5 +b6 ν6 +b7ν7+b8ν8+b9ν9+b10 ν10 +b11p3=-1 3 .576+ 2 2 .1 79ν1+ 2 8.4 0 7ν2 + 2 5.950ν3+ 2 6.690ν4+ 1 4.4 98ν5 + 5.72 6ν6 -5.3 79ν7-3 .2 1 4ν8-1 5.0 2 1ν9-2 5.71 0ν10 + 1 2 .2 78p3 n=63 ,R =0 .997,EV =99.68% ,RMS =3 .73 48,SD =4 .1 1 8,F =773 .1 1 6,U =1 442 2 8.84 4 ,Q=864 .93 8;CV :R2 CV =0 .980 ,EV=98.83 % ,RMS=7.1 2 61 ,SDCV=7.63 4,FCV =2 2 1 .72 0 ,UCV =1 42 1 2 1 .891 ,QCV =2 971 .896.结果良好 . 展开更多
关键词 分子模拟 分子距边矢量ν 化学结构参数化 核磁共振碳谱 烷烃 化学位移和(CSS) 定量构谱关系 ^13C NMR 路径长度指数 多元统计 估计 预测
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Digital characterization and mathematic model of sodium penetration into cathode material for aluminum electrolysis 被引量:5
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作者 吕晓军 李庆余 +1 位作者 赖延清 李劼 《Journal of Central South University》 SCIE EI CAS 2009年第1期96-100,共5页
The sodium expansion curves of semi-graphitic cathode measured with the improved Rapoport-Samoilenko apparatus. The and TiB2/C composite cathode with different TiB2 contents were mathematic model of the sodium expansi... The sodium expansion curves of semi-graphitic cathode measured with the improved Rapoport-Samoilenko apparatus. The and TiB2/C composite cathode with different TiB2 contents were mathematic model of the sodium expansion was deduced on the basis of the experimental results. The sodium expansion parameter (a) and penetration rate factor (Q), were introduced into the model The model was validated with the experimental sodium expansion curves self-measured and reported. The results show that the variation tendency of the sodium expansion parameter (a) and penetration rate factor (Q) is consistent with that of the experimental curves. The model is capable of not only conveniently judging the cathode quality, but also favorably establishing a unified standard of the resistance to sodium penetration of cathode. 展开更多
关键词 aluminum electrolysis CATHODE sodium expansion modeling CHARACTERIZATION
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An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B, Al, Ga, In) by Modified Becke-Johnson Potential
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作者 Masood Yousaf M.A. Saeed +3 位作者 R. Ahmed M.M. Alsardia Ahmad Radzi Mat Isa A. Shaari 《Communications in Theoretical Physics》 SCIE CAS CSCD 2012年第11期777-784,共8页
We report the electronic band structure and optical parameters of X-Phosphides (X=B, AI, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (roB J). This potential i... We report the electronic band structure and optical parameters of X-Phosphides (X=B, AI, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (roB J). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: E9 (mBJ-GGA/LDA) 〉 E9 (GGA) 〉 Eg (LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are aiso presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 ev, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AIP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5- 7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges. 展开更多
关键词 DFT FP-LAPW lo mBJ-GGA optical properties electronic structure
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