聚丙烯核孔膜化学蚀刻工艺研究

探讨了蚀刻剂中重铬酸钾浓度、硫酸浓度及蚀刻温度、蚀刻时间等因素对聚丙烯膜基体蚀刻速率的影响 ;建立了基体蚀刻速率与重铬酸钾浓度、硫酸浓度、蚀刻温度的数学关联式 ;并选择一定的蚀刻条件对辐照过的聚丙烯膜进行蚀刻 ,得到了预期孔径的聚丙烯核孔膜。

氧化物超导簿膜的成型技术

本文介绍了Y-Ba-Cu-O(YBCO)高Tc超导膜的两种成型方法:化学湿法刻蚀和剥离光刻技术。在化学蚀刻方法中,发现腐蚀液H_3PO_4/H_2O的腐蚀速率R与浓度γ的关系可粗略地描述为R(?)γ(γ≤50％),通过选择合适的溶液浓度,腐蚀速率较容易调整,在适当的腐蚀条件下,侧向腐蚀很小。剥离工艺不仅适合于加工细线条,还可以避免成型过程对膜表面的污染及减小对超导性能的影响。这两种方法已成功地应用于高Tc超导薄膜的红外探测器的制作。

Chemical etching process of copper electrode for bioelectrical impedance technology

In order to obtain bioelectrical impedance electrodes with high stability, the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures. By changing the etching processing parameters, some comparison experiments were performed to reveal the influence of etching time, etching temperature, etching liquid concentration, and sample sizes on the etching rate and surface microstructures of copper electrode. The result shows that the etching rate is decreased with increasing etching time, and is increased with increasing etching temperature. Moreover, it is found that the sample size has little influence on the etching rate. After choosing the reasonable etching liquid composition （formulation 3）, the copper electrode with many surface microstructures can be obtained by chemical etching process at room temperature for 20 rain. In addition, using the alternating current impedance test of electrode-electrode for 24 h, the copper electrode with a series of surface microstructures fabricated by the etching process presents a more stable impedance value compared with the electrocardiograph （ECG） electrode, resulting from the reliable surface contact of copper electrode-electrode.

掩膜配线形成技术的特征和问题点

半导体芯片支撑即印制板最基本要素就是形成电子回路配线，几十年以来沿用传统的光化蚀刻工艺制作成的。配线的形成工艺是比较复杂的，需要光源通过黑白反差很大透明的掩膜，使感光材料起光化学作用形成配线图形。半导体大规模集成电路，就是采用光化学蚀刻工艺进行微细加工，就是利用先进的技术制作掩膜（光具）。

蚀刻金属以产生更好的粘合

德国基尔大学的研究者们改变了金属的表面性能，而不影响其机械稳定性和物理特性。该方法基于电化学蚀刻工艺，其中金属的最上层以严格控制的方式以微米级别粗糙化。通过这种纳米级雕刻工艺，诸如铝、钛或锌等金属可以与几乎所有其他材料永久地结合，变得防水、或者提高了它们的生物相容性。