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铜在硝酸介质苯并三唑抛光液中化学-机械抛光时的电化学行为 被引量:4
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作者 何捍卫 胡岳华 黄可龙 《过程工程学报》 CAS CSCD 北大核心 2002年第1期67-70,共4页
用电化学测试技术研究了硝酸、苯并三唑及H2O2浓度对铜表面的成膜及铜抛光过程的影响.测试了各种体系中铜的交流阻抗及其影响因素,探讨了腐蚀电流密度与抛光压力、抛光转速的关系,考察了化学-机械抛光过程中腐蚀电位及极化曲线的变化规... 用电化学测试技术研究了硝酸、苯并三唑及H2O2浓度对铜表面的成膜及铜抛光过程的影响.测试了各种体系中铜的交流阻抗及其影响因素,探讨了腐蚀电流密度与抛光压力、抛光转速的关系,考察了化学-机械抛光过程中腐蚀电位及极化曲线的变化规律. 用腐蚀电流密度及腐蚀电位等电化学变量的变化解释了抛光过程的电化学机理,证明在硝酸溶液介质中,以苯并三唑为成膜剂、H2O2为助剂、纳米g -Al2O3为磨粒的抛光液配方是可行的. 展开更多
关键词 化学-机械抛光 苯并三唑 化学行为 硝酸 抛光
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铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为 被引量:2
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作者 何捍卫 胡岳华 黄可龙 《应用化学》 CAS CSCD 北大核心 2001年第11期893-897,共5页
用电化学测试技术研究了介质和成膜剂浓度对铜表面的成膜及抛光过程的影响 ,探讨了化学机械抛光的压力、转速与膜的厚度、致密性的关系 ,找出了可以定性说明抛光过程及抛光速率的电化学变量或腐蚀电位 ( E-corrosion)及腐蚀电流密度 ( I... 用电化学测试技术研究了介质和成膜剂浓度对铜表面的成膜及抛光过程的影响 ,探讨了化学机械抛光的压力、转速与膜的厚度、致密性的关系 ,找出了可以定性说明抛光过程及抛光速率的电化学变量或腐蚀电位 ( E-corrosion)及腐蚀电流密度 ( I-corrosion) ,并据 E-corrosion及 I-corrosion的变化规律得到如下主要结论 :1 )介质及成膜剂浓度对铜表面钝化膜的厚度、致密性起关键作用 ;2 )膜的厚度、致密性决定了抛光的压力及转速 ;3) 展开更多
关键词 化学-机械抛光 化学行为 铁氰化钾 抛光 成膜剂 抛光过程
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模具电化学-机械抛光技术及装备 被引量:3
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作者 季仁良 《航空制造技术》 北大核心 2003年第3期73-75,共3页
着重论述了电化学 -机械抛光工艺及装备的研制方法 ,提出了初步的应用范围。试验表明这种工艺方法具有加工范围广、精度高和生产效率高等优点 。
关键词 模具 化学-机械抛光工艺 抛光装备 导电锉 导电油石
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甲胺-铁氰化钾抛光液中铜钝化成膜的机理研究 被引量:1
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作者 何捍卫 周科朝 胡岳华 《功能材料》 EI CAS CSCD 北大核心 2005年第6期933-936,共4页
用电化学循环伏安测试技术研究了铜在甲胺铁氰化钾抛光液中钝化成膜的机理。通过大幅度改变电位扫描速率,分析了氧化峰电流(IApa)、氧化峰电位(EApa)及阳阴峰电流的比值(IApa/IApc)与相应电位扫描速率的关系。结果表明,氧化峰电流和氧... 用电化学循环伏安测试技术研究了铜在甲胺铁氰化钾抛光液中钝化成膜的机理。通过大幅度改变电位扫描速率,分析了氧化峰电流(IApa)、氧化峰电位(EApa)及阳阴峰电流的比值(IApa/IApc)与相应电位扫描速率的关系。结果表明,氧化峰电流和氧化峰电位均与电位扫描速率的平方根成线性关系,说明成膜复盖度θ与电位扫描速率无关,成膜过程符合M櫣ller模型。成膜过程中,电极反应存在后置化学转化,铜在去极化剂作用下发生失去一个电子的阳极溶解反应,然后再进行化学转化反应生成Cu4[Fe(CN)6]钝化膜。在CMP过程中,具有这种钝化膜的铜的腐蚀电流密度及抛光速率随抛光转速的增加而增大。 展开更多
关键词 化学-机械抛光 钝化 机理
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铜在氨水介质铁氰化钾CMP抛光液中抛光速率及其影响因素的研究 被引量:8
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作者 何捍卫 胡岳华 黄可龙 《电化学》 CAS CSCD 2002年第2期202-206,共5页
本文研究了腐蚀介质氨水、成膜剂铁氰化钾及磨粒γ_Al2 O3 浓度、抛光压力和抛光转速对铜化学_机械抛光速率的影响 .解释了各影响因素的影响机理 .实验表明了在一定范围内抛光速率与抛光压力及抛光转速呈线性关系 ,组分浓度对抛光速率... 本文研究了腐蚀介质氨水、成膜剂铁氰化钾及磨粒γ_Al2 O3 浓度、抛光压力和抛光转速对铜化学_机械抛光速率的影响 .解释了各影响因素的影响机理 .实验表明了在一定范围内抛光速率与抛光压力及抛光转速呈线性关系 ,组分浓度对抛光速率的影响为非线性关系 ,Preston系数Kp是变量 .最大抛光速率的化学_机械抛光液的配方为 :4 %K3Fe(CN) 6 + 1 %NH3·H2 O + 2 5%γ -Al2 O3,Kp=0 .0 2 3 83 ;工艺条件为 :3 0 0r/min、80kpa .最佳抛光效果为 :Ra=50nm ,Rmax=4 0 展开更多
关键词 氨水介质 铁氰化钾 抛光 CMP 抛光速率 影响因素 化学-机械抛光 化学腐蚀
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化学工业中的纳米技术(续)
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作者 朱曾惠 《化工新型材料》 CAS CSCD 2004年第2期38-38,43,共2页
关键词 化学工业 纳米技术 纳米粒子 化学-机械抛光 TIO2 ZNO
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Scratching by pad asperities in copper electrochemical-mechanical polishing
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作者 边燕飞 翟文杰 +1 位作者 程媛媛 朱宝全 《Journal of Central South University》 SCIE EI CAS 2014年第11期4157-4162,共6页
Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical ... Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data. 展开更多
关键词 electrochemical-mechanical polishing scratch pad asperities nano-scratch model nano-indentation
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Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing 被引量:1
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作者 边燕飞 翟文杰 +2 位作者 程媛媛 朱宝全 王金虎 《Journal of Central South University》 SCIE EI CAS 2014年第6期2191-2201,共11页
The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric a... The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes. 展开更多
关键词 electrochemical mechanical polishing electrolyte composition removal mechanism 5-methyl-lH-benzotriazole hydroxyethylidenediphosphoric acid tribasic ammonium citrate
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Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process 被引量:3
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作者 WANG TongQing LU XinChun +1 位作者 ZHAO DeWen HE YongYong 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第8期1974-1979,共6页
A finite element analysis(FEA)model is developed for the chemical-mechanical polishing(CMP)process on the basis of a 12-in five-zone polishing head.The proposed FEA model shows that the contact stress non-uniformity i... A finite element analysis(FEA)model is developed for the chemical-mechanical polishing(CMP)process on the basis of a 12-in five-zone polishing head.The proposed FEA model shows that the contact stress non-uniformity is less dependent on the material property of the membrane and the geometry of the retaining ring.The larger the elastic modulus of the pad,the larger contact stress non-uniformity of the wafer.The applied loads on retaining ring and zone of the polishing head significantly affect the contact stress distribution.The stress adjustment ability of a zone depends on its position.In particular,the inner-side zone has a high stress adjustment ability,whereas the outer-side zone has a low stress adjustment ability.The predicted results by the model are shown to be consistent with the experimental data.Analysis results have revealed some insights regarding the performance of the multi-zone CMP. 展开更多
关键词 chemical mechanical polishing contact stress NON-UNIFORMITY multi-zone polishing head retaining ring
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Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing 被引量:2
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作者 Peili Gao Tingting Liu +3 位作者 Zhenyu Zhang Fanning Meng Run-Ping Ye Jian Liu 《Science China Materials》 SCIE EI CAS CSCD 2021年第11期2747-2763,共17页
The chemical mechanical polishing(CMP)technology has been widely used for surface modification of critical materials and components with high quality and efficiency.In a typical CMP process,the mechanical properties o... The chemical mechanical polishing(CMP)technology has been widely used for surface modification of critical materials and components with high quality and efficiency.In a typical CMP process,the mechanical properties of abrasives play a vital role in obtaining the ultra-precision and damage-free surface of wafers for improvement of their performances.In this work,a series of fine structured rod-shaped silica(RmSiO2)-based abrasives with controllable sizes and diverse ordered mesoporous structures were synthesized via a soft template approach,and successfully applied in the sustainable polishing slurry for improving the surface quality of cadmium zinc telluride(CZT)wafers.Compared with commercial silica gel,solid and mesoporous silica spheres,the RmSiO2 abrasives present superior elastic deformation capacity and surface precision machinability on account of their mesoporous structures and rod shapes.Especially,ultra-precision surface roughness and relatively effective material removal speed were achieved by the CMP process using the RmSiO2 abrasives with a length/diameter(L/d)ratio of 1.In addition,a potential CMP mechanism of the developed polishing slurry to CZT wafer was elucidated by analyzing X-ray photoelectron spectra and other characterizations.The proposed interfacial chemical and mechanical effects will provide a new strategy for improving abrasives’machinability and precision manufacture of hard-to-machine materials. 展开更多
关键词 non-spherical abrasives mesoporous structure chemical mechanical polishing interfacial mechanochemistry
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全球纳米材料市场增长强劲
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作者 李正 《精细与专用化学品》 CAS 2003年第7期32-33,共2页
据美国商务通讯公司(Business CommunicationsCompany,简称BBC)对2002年10月底在纽约召开的“纳米粒料2002年研讨会”的报告称,2001年全球纳米粒料总销售额估计为5.556亿美元,预计2005年将达到9亿美元,年均增长率为12.8%。按用途分。
关键词 纳米材料 市场 世界 化合物 化学-机械抛光
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Probing particle removal in brush scrubber cleaning with fluorescence technique 被引量:3
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作者 HUANG YaTing LI Yang +1 位作者 GUO Dan MENG ChunLing 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第12期2994-3000,共7页
Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velo... Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velocimetry(PTV)technique was employed to characterize the particle removal displacement and velocity in the interface between a transparent copper film and a porous polyvinyl alcohol(PVA)brush during the cleaning process.Several different cleaning conditions including rotation speeds,loading pressure and cleaning agent were examined and the particle removal rate was compared.Elastic and friction removal,hydrodynamic removal and mixed-type removal are the three types of particle removal.Particles with an arc trace and uniform velocity curves were removed by friction and elastic force which were related to the brush load.Particles with a random trace and fluctuant velocity curves were removed by hydrodynamic force which was determined by the brush rotation speed.The increase of particle removal rate(PRR)with brush rotation speed is a logistic function.It is easier to improve PRR by increasing the brush load or by adding surfactant than by increasing the brush rotation speed. 展开更多
关键词 brush-scrub post CMP(chemical mechanical polishing) cleaning particle removal fluorescence technique
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