A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode,which is flip-chip solded into a 50|xm thick quartz substrate.Diode embedding impedance is found by fullwave analysis with lumped por...A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode,which is flip-chip solded into a 50|xm thick quartz substrate.Diode embedding impedance is found by fullwave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model.All the matching circuit is designed 'on-chip' and the multiplier is self-biasing.To the doubler,a conversion efficiency of 6.1%and output power of 5.4mW are measured at 214 GHz with input power of 88 mW,and the typical measured efficiency is 4.5%in200~225GHz.展开更多
基金Supported by the 12th Five-year Defense Pre-research Fund of China(No.51308030509)
文摘A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode,which is flip-chip solded into a 50|xm thick quartz substrate.Diode embedding impedance is found by fullwave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model.All the matching circuit is designed 'on-chip' and the multiplier is self-biasing.To the doubler,a conversion efficiency of 6.1%and output power of 5.4mW are measured at 214 GHz with input power of 88 mW,and the typical measured efficiency is 4.5%in200~225GHz.
