The Al-27%Si alloy was prepared by the spray forming process,and its microstructure evolution during the semisolid reheating process was investigated.The results show that,the primary Si phase coarsens during the rehe...The Al-27%Si alloy was prepared by the spray forming process,and its microstructure evolution during the semisolid reheating process was investigated.The results show that,the primary Si phase coarsens during the reheating process and the coarsening rate increases with the increase of reheating temperature.The eutectic phase is produced in the molten region when quenched in the cold water.The microstructure evolution in the semisolid state can be divided into three stages.The remarkable characteristic of the first stage is only a solid-state phase transformation process.However,the region around the α(Al) matrix gradually melts in the second stage.The primary Si in the liquid phase coarsens obviously,and the eutectic phase is produced in the molten region when the specimens are quenched in cold water.In the last stage,the same thing as that in the second stage happens except that all the α(Al) matrixes are melted.展开更多
The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation ...The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.展开更多
The rate of microstructural coarsening of recrystallisation and partial melting (RAP) and cooling slope (CS) processed materials in the semi-solid state is compared with rates found in the literature.The rate of coars...The rate of microstructural coarsening of recrystallisation and partial melting (RAP) and cooling slope (CS) processed materials in the semi-solid state is compared with rates found in the literature.The rate of coarsening depended on the liquid fraction but RAP route 2014 alloy with 37% liquid coarsened slightly more slowly than the CS route 2014 alloy with a lower liquid fraction of 17%, contrary to expectations.For the CS route, an increase in liquid fraction resulted in faster coarsening.A modified 2014 alloy with Fe, Mn and Zn stripped out of the composition gave a relatively high coarsening rate.The coarsening rate was also relatively high for CS 201 alloy in comparison with either RAP 2014 or CS 2014.Low coarsening rates are thought to be associated with the presence of particles which inhibit the migration of liquid film grain boundaries.This could be the result of pinning or of the liquid film impeding diffusion at the boundary.展开更多
A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the convent...A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS (complementary metal-oxide semiconductor) process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA.展开更多
In order to research possible influences of the adjustment of plant distribution on the development frequency of thunderstorms over the Leizhou Peninsula, mathematic statistic methods, including correlation analyses, ...In order to research possible influences of the adjustment of plant distribution on the development frequency of thunderstorms over the Leizhou Peninsula, mathematic statistic methods, including correlation analyses, 11 kinds of fitting models and all-variable regression methods, were used for analyses and research. The results show that the average trend of the number of annual thunderstorm days is descending obviously, and there are thunderstorms in all seasons, in which warm post-midday thunderstorms have taken up the most part, and high frequency is found from May to September, and the starting and ending dates of thunderstorms have a great annual discrepancy. The vegetation structure has been improved along with the reduction of rice fields and the area increment of sugarcane and fruits planting, which results in the decrease of the number of thunderstorm days; the change in the characteristics of winter spare fields, which is caused by the planting of vegetables, limits the formation of thunderstorms in early winter and late spring. Meanwhile, the area adjustment of peanut planting has little influence on the variation of thunderstorm days. The adjustment of principal crop distribution, such as rice, sugarcane, fruits and vegetables, may have obvious influence on the formation of thunderstorms, and sugarcane has the largest effect, followed in turn by rice, vegetables and fruits, and the adjustment of crop distribution has little influence on the starting and ending dates of thunderstorms.展开更多
This paper presents an up-conversion mixer for 2.4GHz wireless sensor networks in 0. 181xm RF complementary metal-oxide semiconductor (CMOS) technology. It is based on a double-balanced Gilbert cell type. With two G...This paper presents an up-conversion mixer for 2.4GHz wireless sensor networks in 0. 181xm RF complementary metal-oxide semiconductor (CMOS) technology. It is based on a double-balanced Gilbert cell type. With two Gilbert cells it was applied quadrature modulation. Operational ampli- tiers are used in this design to improve the conversion gain under low power consumption. The mixer design is based on 0.18txm RF CMOS process. And the mixer test results indicate that under 1.8V power supply, with input frequency 2.4 - 2.4835GHz, the conversion voltage gain is 1.2 - 2dB. When the output frequency is 2.4GHz, its power gain is -4.46dB, and its input referred 1 dB com- pression point is -11.5dBm and it consumes 1.77mA current.展开更多
A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design metho...A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design method for reducing the optical power at the two cavity facets without changing the output power of laser diodes was discussed, which is helpful to optimize the cavity facet coating and raise the threshold current at which catastrophic optical damage occurs.展开更多
Highly active and durable electrocatalysts with minimal Pt usage are desired for commercial fuel cell applications.Herein,we present a highly dispersed L1_(0)-PtZn intermetallic catalyst for the oxygen reduction react...Highly active and durable electrocatalysts with minimal Pt usage are desired for commercial fuel cell applications.Herein,we present a highly dispersed L1_(0)-PtZn intermetallic catalyst for the oxygen reduction reaction(ORR),in which a Zn-rich metal–organic framework(MOF)is used as an in situ generated support to confine the growth of PtZn particles.Despite requiring high-temperature treatment,the intermetallic L1_(0)-PtZn particles exhibit a small mean size of3.95 nm,which confers the catalysts with high electrochemical active surface area(81.9 m^(2)g_(Pt)^(-1))and atomic utilization.The Pt electron structure and binding strength between Pt and oxygen intermediates are optimized through ligand effect and compressive strain.These advantages result in ORR mass activity and specific activity of 0.926 A mg_(Pt)^(-1) and 1.13 mA cm^(-2),respectively,which are 5.4 and 4.0 times those of commercial Pt/C.The stable L10structure provides the catalysts with superb durability;only a halfwave potential loss of 11 mV is observed after 30,000 cycles of accelerated stress tests,through which the structure evolves into a more stable PtZn-Pt core-shell structure.Therefore,the development of a Zn-based MOF as a catalyst support is demonstrated,providing a synergy strategy to prepare highly dispersed intermetallic alloys with high activity and durability.展开更多
The quasinormal mode frequencies can be understood from the massless particles trapped at the unstable circular null geodesics and slowly leaking out to infinity. Based on this viewpoint, in this paper, we semiclassic...The quasinormal mode frequencies can be understood from the massless particles trapped at the unstable circular null geodesics and slowly leaking out to infinity. Based on this viewpoint, in this paper, we semiclassically construct the entropy spectrum of the static and stationary black holes from the null geodesics. The result shows that the spacing of the entropy spectrum only depends on the property of the black hole in the eikonal limit. Moreover, for a black hole far from the extremal case, the spacing is found to be smaller than 2π for any dimension, which is very different from the result of the previous work by using the usual quasinormal mode frequencies.展开更多
With the proliferation of energy storage and power applications, electric vehicles particularly, solid-state batteries are considered as one of the most promising strategies to address the ever-increasing safety conce...With the proliferation of energy storage and power applications, electric vehicles particularly, solid-state batteries are considered as one of the most promising strategies to address the ever-increasing safety concern and high energy demand of power devices. Here, we demonstrate the Al4B2O9 nanorods-modified poly(ethylene oxide) (PEO)-based solid polymer electrolyte (ASPE) with high ionic conductivity, wide electrochemical window, decent mechanical property and nonflammable performance. Specifically, because of the longer-range ordered Li+ transfer channels conducted by the interaction between Al4B2O9 nanorods and PEO, the optimal ASPE (ASPE-1) shows excellent ionic conductivity of 4.35×10^−1 and 3.1×10^−1 S cm^−1 at 30 and 60℃, respectively. It also has good electrochemical stability at 60℃ with a decomposition voltage of 5.1 V. Besides, the assembled LiFePO4//Li cells show good cycling performance, delivering 155 mA h g−1 after 300 cycles at 1 C under 60℃, and present excellent low temperature adaptability, retaining over 125 mA h g^−1 after 90 cycles at 0.2 C under 30℃. These results verify that the addition of Al4B2O9 nanorods can effectively promote the integrated performance of solid polymer electrolyte.展开更多
Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be...Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be programmable for channel selection in multi-channel communication systems. A dual-modulus prescaler (DMP) is needed to provide variable division ratios. DMP is considered as a critical power dissipative block since it always operates at full speed. This paper introduces a high speed and low power complementary metal oxide semiconductor (CMOS) 15/16 DMP based on true single-phase-clock (TSPC) and transmission gates (TGs) cell. A conventional TSPC is optimized in terms of devices size, and it is resimulated. The TSPC is used in the synchronous and asynchronous counter. TGs are used in the control logic. The DMP circuit is implemented in 0.18 μm CMOS process. The simulation results are provided. The results show wide operating frequency range from 7.143 MHz to 4.76 GHz and it comsumes 3.625 mW under 1.8 V power supply voltage at 4.76 GHz.展开更多
基金Project (JPPT-125-GH-039) supported by Ministry of Science and Technology of China
文摘The Al-27%Si alloy was prepared by the spray forming process,and its microstructure evolution during the semisolid reheating process was investigated.The results show that,the primary Si phase coarsens during the reheating process and the coarsening rate increases with the increase of reheating temperature.The eutectic phase is produced in the molten region when quenched in the cold water.The microstructure evolution in the semisolid state can be divided into three stages.The remarkable characteristic of the first stage is only a solid-state phase transformation process.However,the region around the α(Al) matrix gradually melts in the second stage.The primary Si in the liquid phase coarsens obviously,and the eutectic phase is produced in the molten region when the specimens are quenched in cold water.In the last stage,the same thing as that in the second stage happens except that all the α(Al) matrixes are melted.
文摘The design, fabrication and characteristics of 4H SiC merged PN Schottky (MPS) diodes with Ni Schottky contact and junction termination extension (JTE) edge termination are reported. A multiple energy implantation Al in the surface of the n - drift region below the face to face Schottky metal formed pn junctions, which screen the Schottky contact from high electrical, post implantation annealing has been done at 1500℃ for 30min in the ultra high purity Ar ambient. The devices can block more than 600V reverse voltage and the lowest leakage current at -600V is 1×10 -3 A/cm 2, while the forward current density at 3V is more than 200A/cm 2 for 1000μm devices, 1000A/cm 2 at 3 5V for 300μm devices.
基金the UK Engineering and Physical Sciences Research Council (EPSRC Grant GR/M89096) and the University of Leicester for financial support
文摘The rate of microstructural coarsening of recrystallisation and partial melting (RAP) and cooling slope (CS) processed materials in the semi-solid state is compared with rates found in the literature.The rate of coarsening depended on the liquid fraction but RAP route 2014 alloy with 37% liquid coarsened slightly more slowly than the CS route 2014 alloy with a lower liquid fraction of 17%, contrary to expectations.For the CS route, an increase in liquid fraction resulted in faster coarsening.A modified 2014 alloy with Fe, Mn and Zn stripped out of the composition gave a relatively high coarsening rate.The coarsening rate was also relatively high for CS 201 alloy in comparison with either RAP 2014 or CS 2014.Low coarsening rates are thought to be associated with the presence of particles which inhibit the migration of liquid film grain boundaries.This could be the result of pinning or of the liquid film impeding diffusion at the boundary.
基金Project supported by the 2nd Stage of Brain KoreaProject supported by the Korea Research Foundation
文摘A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS (complementary metal-oxide semiconductor) process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA.
文摘In order to research possible influences of the adjustment of plant distribution on the development frequency of thunderstorms over the Leizhou Peninsula, mathematic statistic methods, including correlation analyses, 11 kinds of fitting models and all-variable regression methods, were used for analyses and research. The results show that the average trend of the number of annual thunderstorm days is descending obviously, and there are thunderstorms in all seasons, in which warm post-midday thunderstorms have taken up the most part, and high frequency is found from May to September, and the starting and ending dates of thunderstorms have a great annual discrepancy. The vegetation structure has been improved along with the reduction of rice fields and the area increment of sugarcane and fruits planting, which results in the decrease of the number of thunderstorm days; the change in the characteristics of winter spare fields, which is caused by the planting of vegetables, limits the formation of thunderstorms in early winter and late spring. Meanwhile, the area adjustment of peanut planting has little influence on the variation of thunderstorm days. The adjustment of principal crop distribution, such as rice, sugarcane, fruits and vegetables, may have obvious influence on the formation of thunderstorms, and sugarcane has the largest effect, followed in turn by rice, vegetables and fruits, and the adjustment of crop distribution has little influence on the starting and ending dates of thunderstorms.
基金Supported by the National High Technology Research and Development Program(No.2007AA01Z2A7)the Special Fund of Jiangsu Province for the Transformation of Scientific and Technological Achievements(No.BA2010073)
文摘This paper presents an up-conversion mixer for 2.4GHz wireless sensor networks in 0. 181xm RF complementary metal-oxide semiconductor (CMOS) technology. It is based on a double-balanced Gilbert cell type. With two Gilbert cells it was applied quadrature modulation. Operational ampli- tiers are used in this design to improve the conversion gain under low power consumption. The mixer design is based on 0.18txm RF CMOS process. And the mixer test results indicate that under 1.8V power supply, with input frequency 2.4 - 2.4835GHz, the conversion voltage gain is 1.2 - 2dB. When the output frequency is 2.4GHz, its power gain is -4.46dB, and its input referred 1 dB com- pression point is -11.5dBm and it consumes 1.77mA current.
基金supported by the National Natural Science Foundation of China (Grant Nos.60506001,60976045,60836003,60776047 and 61076119) the National Basic Research Program of China ("973" Project) (Grant No. 2007CB936700)the National Science Foundation for Distinguished Yong Scholar (Grant No. 60925017)
文摘A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design method for reducing the optical power at the two cavity facets without changing the output power of laser diodes was discussed, which is helpful to optimize the cavity facet coating and raise the threshold current at which catastrophic optical damage occurs.
基金supported by the National Science and Technology Major Project(2017YFB0102900)the National Natural Science Foundation of China(21633008,21673221 and U1601211)Jilin Province Science and Technology Development Program(20200201001JC,20190201270JC and 20180101030JC)。
文摘Highly active and durable electrocatalysts with minimal Pt usage are desired for commercial fuel cell applications.Herein,we present a highly dispersed L1_(0)-PtZn intermetallic catalyst for the oxygen reduction reaction(ORR),in which a Zn-rich metal–organic framework(MOF)is used as an in situ generated support to confine the growth of PtZn particles.Despite requiring high-temperature treatment,the intermetallic L1_(0)-PtZn particles exhibit a small mean size of3.95 nm,which confers the catalysts with high electrochemical active surface area(81.9 m^(2)g_(Pt)^(-1))and atomic utilization.The Pt electron structure and binding strength between Pt and oxygen intermediates are optimized through ligand effect and compressive strain.These advantages result in ORR mass activity and specific activity of 0.926 A mg_(Pt)^(-1) and 1.13 mA cm^(-2),respectively,which are 5.4 and 4.0 times those of commercial Pt/C.The stable L10structure provides the catalysts with superb durability;only a halfwave potential loss of 11 mV is observed after 30,000 cycles of accelerated stress tests,through which the structure evolves into a more stable PtZn-Pt core-shell structure.Therefore,the development of a Zn-based MOF as a catalyst support is demonstrated,providing a synergy strategy to prepare highly dispersed intermetallic alloys with high activity and durability.
基金supported by the National Natural Science Foundation of China(Grant Nos.1120507411375075 and 11522541)the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2015-jl01)
文摘The quasinormal mode frequencies can be understood from the massless particles trapped at the unstable circular null geodesics and slowly leaking out to infinity. Based on this viewpoint, in this paper, we semiclassically construct the entropy spectrum of the static and stationary black holes from the null geodesics. The result shows that the spacing of the entropy spectrum only depends on the property of the black hole in the eikonal limit. Moreover, for a black hole far from the extremal case, the spacing is found to be smaller than 2π for any dimension, which is very different from the result of the previous work by using the usual quasinormal mode frequencies.
基金financially supported by the National Natural Science Foundation of China (51804344)the Huxiang Youth Talent Support Program (2019RS2002)+2 种基金the Innovation and Entrepreneurship Project of Hunan Province,China (2018GK5026)the Innovation-Driven Project of Central South University (2020CX027)Guangdong Yang Fan Plan for Postdoctor Program
文摘With the proliferation of energy storage and power applications, electric vehicles particularly, solid-state batteries are considered as one of the most promising strategies to address the ever-increasing safety concern and high energy demand of power devices. Here, we demonstrate the Al4B2O9 nanorods-modified poly(ethylene oxide) (PEO)-based solid polymer electrolyte (ASPE) with high ionic conductivity, wide electrochemical window, decent mechanical property and nonflammable performance. Specifically, because of the longer-range ordered Li+ transfer channels conducted by the interaction between Al4B2O9 nanorods and PEO, the optimal ASPE (ASPE-1) shows excellent ionic conductivity of 4.35×10^−1 and 3.1×10^−1 S cm^−1 at 30 and 60℃, respectively. It also has good electrochemical stability at 60℃ with a decomposition voltage of 5.1 V. Besides, the assembled LiFePO4//Li cells show good cycling performance, delivering 155 mA h g−1 after 300 cycles at 1 C under 60℃, and present excellent low temperature adaptability, retaining over 125 mA h g^−1 after 90 cycles at 0.2 C under 30℃. These results verify that the addition of Al4B2O9 nanorods can effectively promote the integrated performance of solid polymer electrolyte.
文摘Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be programmable for channel selection in multi-channel communication systems. A dual-modulus prescaler (DMP) is needed to provide variable division ratios. DMP is considered as a critical power dissipative block since it always operates at full speed. This paper introduces a high speed and low power complementary metal oxide semiconductor (CMOS) 15/16 DMP based on true single-phase-clock (TSPC) and transmission gates (TGs) cell. A conventional TSPC is optimized in terms of devices size, and it is resimulated. The TSPC is used in the synchronous and asynchronous counter. TGs are used in the control logic. The DMP circuit is implemented in 0.18 μm CMOS process. The simulation results are provided. The results show wide operating frequency range from 7.143 MHz to 4.76 GHz and it comsumes 3.625 mW under 1.8 V power supply voltage at 4.76 GHz.