半场制篮球运动在技校开展的可行性研究

本文通过对技校学生半场制篮球运动的调查问卷和个别访谈,结果发现在课余时间及体育课活动时间,学生参与半场制篮球运动的人数较多,学生喜欢半场制篮球运动的程度高。但普及影响力小,因此,本文提出相关的对策,旨在规范、推广半场制篮球运动。

三人制教学比赛在篮球选项课中的实验分析

采用教学实验法,将三人制教学比赛在篮球选项课中进行大胆尝试.结果显示,三人制教学比赛不但提高了学生的篮球技能和身体素质,而且有利于培养学生的篮球兴趣和实践能力,更好地满足大学生素质教育的需要,在篮球选项中应广泛推广.

试述在高校篮球课教学中如何运用三人制教学比赛

采用了教学实验法,把三人制教学比赛运用到高校体育篮球课中进行尝试。试验结果显示:三人制教学比赛不仅提高了大学生的篮球技能和身体素质,而且有助于培养学生的篮球兴趣和实践能力,更好地满足大学生素质教育的需要,在篮球教学中应广泛推广。

Si/SiGe PMOSFET USING P^+ IMPLANTATION TECHNOLOGY

Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.

The Comribution of the New Class C From Brazil to Deindustrialization and Increased Imports

This research analyzes the growth impacts promoted by C class in the process of the freezing of the Brazilian industry and increased imports. This emerging market, called class C, which is incorporated in part by the low-income segment, presents distinct characteristics and needs and for this precise reason eventually burdens the short-term production of Brazilian companies, which feel the need to opt for the importation of basic commodities, manufactured, and semi-manufactured goods, in order to maintain a market share and return on their investments. Although this fact is actually part of a trend of global economic transformation, here it is due to a number of irregular actions taken by the Brazilian government facing a short-term political need. Stemming from quantitative researches and qualitative data, this paper sought to learn more about the consumers＇ profile and draw up some recommendations for the organizations, in order to be better prepared to face this new demand. This paper also sought to know the actions already undertaken by a large cosmetics company, parts of whose products aim at class C.

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.

DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes:A Research Based on Channel Length Modulation Effect

Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.