A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prep...A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm^2/Vs, an on/off ratio of 1.7 × 10^4 and a threshold voltage of 2.3 V.展开更多
A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispe...A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55 μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.展开更多
Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in sili...Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.展开更多
International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason,...International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason, operating of AC-DC converters with high power factor and low line current distortion has become essential. In this paper, the prototypal realization of a three-phase AC-DC 48 V power electronic converter for telecom system supplying is described and experimental testing results are discussed. The main constraints in the power supply design are the required power density of about 900 W per dm3 as well as the absence of the neutral wire in the supply grid. The carried out investigation is focused on three-level power converter configurations which are considered in order to reduce voltage rating of power switches. As a result of the reduced voltage, low on-resistance metal-oxide-semiconductor field effect transistors can be used in the power stage, solution which allows to achieve improved efficiency as well as increased switching frequency with respect to the insulated gate bipolar transistors based two-level topologies.展开更多
A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on in...A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.展开更多
In this article we briefly review new quantum functional compounds primarily based on our recent works. We will highlight the effects of pressures on both materials synthesis and quantum tuning. The contents include ...In this article we briefly review new quantum functional compounds primarily based on our recent works. We will highlight the effects of pressures on both materials synthesis and quantum tuning. The contents include （I） ＂111＂-type iron based super- conducting system, （II） pressure induced superconductivity in topological insulators and （II/） the new diluted magnetic semi- conductors with decoupled spin charge doping.展开更多
基金the National Natural Science Foundation of China (No.60676033)
文摘A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm^2/Vs, an on/off ratio of 1.7 × 10^4 and a threshold voltage of 2.3 V.
基金National Natural Science Foundation of China(60677023)
文摘A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55 μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.
基金National Basic Research Program of China("973"Project , 2007CB613405 and 2006CB302803)"863"National High Technology Programme of China(2006AA03Z424)
文摘Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.
文摘International standards impose several constraints concerning the electric power quality and require that the harmonic content of the line current of grid connected equipment is below assigned limits; for this reason, operating of AC-DC converters with high power factor and low line current distortion has become essential. In this paper, the prototypal realization of a three-phase AC-DC 48 V power electronic converter for telecom system supplying is described and experimental testing results are discussed. The main constraints in the power supply design are the required power density of about 900 W per dm3 as well as the absence of the neutral wire in the supply grid. The carried out investigation is focused on three-level power converter configurations which are considered in order to reduce voltage rating of power switches. As a result of the reduced voltage, low on-resistance metal-oxide-semiconductor field effect transistors can be used in the power stage, solution which allows to achieve improved efficiency as well as increased switching frequency with respect to the insulated gate bipolar transistors based two-level topologies.
文摘A novel level-shift LDMOS （lateral double-diffused metal oxide semiconductor） structure with the HV （high voltage） -interconnection for a 600 V-HVIC （high voltage integrated circuit） on thick SOI （silicon on insulator） is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600 V. From the proposed structure, the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600 V and high hot carrier instability, and the isolation performance over 1,200 V can be obtained successfully. This paper will show numerical and experimental results in detail.
基金supported by the National Natural Science Foundation of China and Ministry of Science and Technology(MOST)
文摘In this article we briefly review new quantum functional compounds primarily based on our recent works. We will highlight the effects of pressures on both materials synthesis and quantum tuning. The contents include （I） ＂111＂-type iron based super- conducting system, （II） pressure induced superconductivity in topological insulators and （II/） the new diluted magnetic semi- conductors with decoupled spin charge doping.
