国家半导体器件质量监督检验中心 中国实验室国家认可委员会认可实验室：中电科技半导体器体可靠性中心 国防科技工业实验室认可委员会认可实验室

该机构行政上隶属中国电子科技集团公司第十三研究所，业务上直属国家质量监督检验检疫总局，信息产业部和中国电子科技集团公司，由国家认证认可监督管理委员会管理。

集成半导体器件的工作稳定性与频响设计

本文用频响特性与试验研究相结合的方法,对三个微电子产品实例进行模拟,讨论了如何设计补偿元件,防止自激振荡,保证闭环稳定且满足各项性能指标要求的问题。

Development of Novel Thin-Film SOI High Voltage MOSFET

Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.

Ag-coated Long-period Fiber Grating

Based on coupled-mode theo ry , the eigenvalue equation of five-layered long-period fiber grating(LPFG) sens or with Ag film and gas-sensitive film overlays are firstly studied. The probl em of resolving complex eigenvalue equation on five-layered LPFG is analyzed, a nd the method of resolution is also given. Then the eigenvalue equation of three -layered metal cladding LPFG is analyzed, and the complex transcendental equati on is also discussed. The computing result shows that the coupling between the l ow-order EH modes and the core mode is much stronger than that between the low -order HE modes and the core mode.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd∶YVO4 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7.5 W, 2.81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37.5%, and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.

Performance and Effectiveness of UniFET^TM II MOSFET in HID Lamp Ballast

An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.

The highly conducting carbon electrodes derived from spin-coated polyacrylonitrile films

Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at the PAN film thickness of 70 nm） and partial transmittance. These pyrolyzed PAN （PPAN） films were patterned as bottom electrodes by photolithography, and utilized as drain and source electrodes to fabricate organic field-effect transistor （OFET） devices with a p-type semiconductor （P3HT） and an n-type semiconductor （DPP-containing quinoidal small molecule） through a spin-coating procedure. The results showed that the devices with the PAN electrodes exhibited almost the same excellent performance without any further modification compared to those devices with traditional Au electrodes. Since these PPAN films had the advantages of low-cost, high performance, easier for large-area fabrication, thermal and chemical stability, it should be a promising electrode material for organic electrodes.

High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices

Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy （SGM） is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt （〈10 nm） electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance.

New method for high performance multiply-accumulator design

This study presents a new method of 4-pipelined high-performance split multiply-accumulator (MAC) architecture, which is capable of supporting multiple precisions developed for media processors. To speed up the design further, a novel partial product compression circuit based on interleaved adders and a modified hybrid partial product reduction tree (PPRT) scheme are proposed. The MAC can perform 1-way 32-bit, 4-way 16-bit signed/unsigned multiply or multiply-accumulate operations and 2-way parallel multiply add (PMADD) operations at a high frequency of 1.25 GHz under worst-case conditions and 1.67 GHz under typical-case conditions, respectively. Compared with the MAC in 32-bit microprocessor without interlocked piped stages (MIPS), the proposed design shows a great advantage in speed. Moreover, an improvement of up to 32% in throughput is achieved. The MAC design has been fabricated with Taiwan Semiconductor Manufacturing Company (TSMC) 90-nm CMOS standard cell technology and has passed a functional test.

Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process

In this paper,we proposed a new n-channel MOS single event transient(SET) mitigation technique,which is called the open guard transistor(OGT) technique.This hardening scheme is compared with several classical n-channel MOS hardening structures through 3-D TCAD simulations.The results show that this scheme presents about 35% improvements over the unhardened scheme for mitigating the SET pulse,and its upgrade,the 2-fringe scheme,takes on even more than 50% improvements over the unhardened one.This makes significant sense for the semi-conductor device reliability.

UPWIND FINITE VOLUME ELEMENT METHODS FOR ONE-DIMENSIONAL SEMICONDUCTOR DEVICE

This work is supported in part-by Shandong Province Natural Science Foundation under Grant No. ZR2010AQ010 and a Project of Shandong Province Higher Educational Science and Technology Program under Grant Nos. JllLA09 and J10LA01.

Fabricating scheme and optical properties of a flexible semiconductor micro-laser

A new scheme for fabricating a kind of flexible semiconductor micro-laser is put forward.And the optical properties of this kind of flexible semiconductor laser are investigated by the finite difference time domain(FDTD) method.The results show that the light should be localized by photonic crystals(PCs),and the interaction between light and gain medium should be enhanced,while the mode of laser should be modulated.These results indicate that the PCs could control the spontaneous emission,and lead the radiation emission to the needed frequency.