半导体显示屏通信系统(Semiconductor LED Display Communication System),是显示屏与计算机硬件设备信息联通的"桥梁"软件。它主要负责从计算机串口或DVI接口在屏幕上显示图片和视频信息,并将显示信息在电脑特定区域显示出来...半导体显示屏通信系统(Semiconductor LED Display Communication System),是显示屏与计算机硬件设备信息联通的"桥梁"软件。它主要负责从计算机串口或DVI接口在屏幕上显示图片和视频信息,并将显示信息在电脑特定区域显示出来,论文阐释了LED显示屏的发展、LED显示屏通讯系统分析和设计情况。展开更多
Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical et...Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost.展开更多
The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary t...The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.展开更多
文摘半导体显示屏通信系统(Semiconductor LED Display Communication System),是显示屏与计算机硬件设备信息联通的"桥梁"软件。它主要负责从计算机串口或DVI接口在屏幕上显示图片和视频信息,并将显示信息在电脑特定区域显示出来,论文阐释了LED显示屏的发展、LED显示屏通讯系统分析和设计情况。
基金supported by the BEN TEN CO., and National Science Council contracts 98-2221-E-152-001 and 99-2221-E-152-001
文摘Color filters are produced using semiconductor production techniques although problems with low yield remain to be addressed. This study presents a new means of selective removal using excimer irradiation, chemical etching, or electrochemical machining on the fifth generation TFT LCDs. The selective removal of microstructure layers from the color filter surface of an optoelectronic flat panel display, as well as complete removal of the ITO thin-films, RGB layer, or resin black matrix (BM) layer from the substrate is possible. Individual defective film layers can be removed, or all films down to the Cr layer or bare glass can be completely eliminated. Experimental results demonstrate that defective ITO thin-films, RGB layers, or the resin BM layer can now be recycled with a great precision. When the ITO or RGB layer proves difficult to remove, excimer light can be used to help with removal. During this recycling process, the use of 225 nm excimer irradiation before chemical etching, or electrochemical machining, makes removal of stubborn film residues easy, effectively improving the quality of recycled color filters and reducing fabrication cost.
文摘The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.
