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TEM分析用的半导体横截面样品的制备和分析的结果 被引量:2
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作者 范荣团 《电子科学学刊》 CSCD 1990年第6期656-659,共4页
本文介绍了透射式电子显微镜(TEM)用的横截面样品的制作技术。利用这一技术制出的样品,用TEM观察到了GaAs/AlGaAs超晶格结构中周期性的精细成分调制的新现象。在金属有机化合物汽相沉积(MOCVD)生长的GaAs/si材料中还观察到一些新形状的... 本文介绍了透射式电子显微镜(TEM)用的横截面样品的制作技术。利用这一技术制出的样品,用TEM观察到了GaAs/AlGaAs超晶格结构中周期性的精细成分调制的新现象。在金属有机化合物汽相沉积(MOCVD)生长的GaAs/si材料中还观察到一些新形状的位错、微孪晶等。这一种制样技术也适用于其他半导体材料系统的研究。 展开更多
关键词 TEM 半导体样器 制备 电镜分析
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All-Optical Sampling Using Nonlinear Polarization Rotation in a Single Semiconductor Optical Amplifier 被引量:2
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作者 张尚剑 张谦述 +2 位作者 李和平 刘永智 刘永 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1031-1035,共5页
We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in... We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power. 展开更多
关键词 optical signal processing all-optical sampling semiconductor optical amplifier nonlinear polarization rotation
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Electro-optic Sampling of Proton-bombarded GaP Crystal
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作者 ZHANGDa-ming TIANXiao-jian 《Semiconductor Photonics and Technology》 CAS 2000年第2期77-82,共6页
An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurem... An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz. 展开更多
关键词 Proton bombardment Electro-optic sampling Gain-switched semiconductor laser
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