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CBIR在半导体测量中的应用
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作者 张健 《中国高新技术企业》 2010年第1期61-62,共2页
文章简要讨论了CBIR在半导体测量中的应用。从半导体生产测量的特点入手,阐述了利用CBIR进行半导体某些参数测量的可能性和实际意义,在此基础上提出了下一步工作进展的方向,以实现用数字化指导生产实践的目标。
关键词 CBIR 半导体测量 侧壁 SEM图像
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霍尔效应测量半导体特性参数中副效应的消除方法 被引量:4
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作者 杨洁 《潍坊学院学报》 2010年第6期32-34,共3页
简述了霍尔效应的基本原理,分析了利用霍尔效应测量半导体特性参数中影响结果的重要副效应,给出了减小或消除这些副效应的方法,并设计出测试电路。
关键词 霍尔效应 副效应 半导体测量
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基于Windows+RTX平台的半导体实时测量软件系统的开发
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作者 狄非 许维胜 《大众科技》 2014年第1期8-11,共4页
随着半导体技术的发展,对半导体生产工艺的测量和评估的需求也在不断地提高。为此针对某半导体测量设备的实时测量需求,在Windows+RTX的平台下,设计并开发了具有强实时性的测量软件系统。系统的底层测量软件利用RTX提供的API和精确的时... 随着半导体技术的发展,对半导体生产工艺的测量和评估的需求也在不断地提高。为此针对某半导体测量设备的实时测量需求,在Windows+RTX的平台下,设计并开发了具有强实时性的测量软件系统。系统的底层测量软件利用RTX提供的API和精确的时钟开发完成,其运行在RTX拓展系统中控制数据采集卡实时采集数据。上层用户界面使用MFC编制完成,并采用信号量机制与底层软件进行通信,通过共享内存传递测量数据。该软件系统开发完成后,部署在某测量设备上并进行实验,其实验数据表明该系统能很好地完成实时数据测量的任务。 展开更多
关键词 半导体测量 实时数据采集
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半导体元件参数测量仪测量电子元件的原理和方法
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作者 智艾娣 乔春有 《洛阳师专学报(自然科学版)》 1994年第1期43-45,共3页
关键词 半导体元件参数测量 电子元件 测量原理 测量方法
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半导体元件参数测量仪
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作者 王松德 智爱娣 《洛阳师专学报(自然科学版)》 1994年第2期37-39,共3页
关键词 半导体元件参数测量 反向击穿电压
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空间能量粒子探测方法研究 被引量:1
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作者 张珅毅 王世金 《上海航天》 2004年第6期50-54,共5页
阐述了空间能量粒子探测的原理和方法。介绍了国外在能量粒子探测方面所采用的半导体望远镜测量法、电场加速法、磁偏转法等方法,分析了它们各自的优缺点。就制约能量粒子探测技术发展的关键因素进行了讨论。并以此为基础,结合我国实际... 阐述了空间能量粒子探测的原理和方法。介绍了国外在能量粒子探测方面所采用的半导体望远镜测量法、电场加速法、磁偏转法等方法,分析了它们各自的优缺点。就制约能量粒子探测技术发展的关键因素进行了讨论。并以此为基础,结合我国实际情况提出了一种新的探测方法。 展开更多
关键词 空间能量粒子 探测 半导体望远镜测量 电场加速法 磁偏转法 发展趋势
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Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Pérot Semiconductor Lasers
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作者 韩春林 刘瑞喜 +2 位作者 国伟华 于丽娟 黄永箴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第8期789-793,共5页
A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and sing... A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ~24cm -1 is obtained. 展开更多
关键词 semiconductor lasers measurement technique cavity loss
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Novel Fiber Optic Temperature Sensor with Full Compensation Based on Optical Absorption
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作者 WANGJue WANGWei-min 《Semiconductor Photonics and Technology》 CAS 2000年第4期236-241,共6页
A novel system configuration of fiber optic sensor based on optical abso rption is proposed. Several compensation measures are discussed. A simulated exp eriment is designed and the output curve of system is given. Th... A novel system configuration of fiber optic sensor based on optical abso rption is proposed. Several compensation measures are discussed. A simulated exp eriment is designed and the output curve of system is given. The experiment al result shows that these compensation measures are effective on dynamic distu rbances which are caused by background light and optical fiber bend. In addition , the drifts in the light source intensity, fiber losses, and photodetector effi ciency are also compensated. 展开更多
关键词 GaAs semiconductor Temperature measurement Fiber optic sensor REFLECTION COMPENSATION
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Optically Powered Temperature Measuring Instrument for Big Rotor
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作者 ZHENG Dezhong(Yanshan University, Qinhuandao 066004, CHN) 《Semiconductor Photonics and Technology》 CAS 1997年第1期35-39,共5页
Abstract: A micro - power consumption non - contact temperature measuring instrument for big rotor is introduced. As it solves very well the signal coupling under high speed rotation and power supply problem for probe... Abstract: A micro - power consumption non - contact temperature measuring instrument for big rotor is introduced. As it solves very well the signal coupling under high speed rotation and power supply problem for probe, the instrument can realize persistent on - line temperature measurement for big rotor drived by the ordinary light transmitted by optical fiber under the room light. 展开更多
关键词 Non - contact Measurement Optical Fiber ROTOR SemiconductorThermistor
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Force Sensing Resistor and Its Applicationto Robotic Control
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作者 WANG Hongrui, LU Yingquan, SONG Weigong(Yanshan University, Qinhuangdao 066004, CHN ) 《Semiconductor Photonics and Technology》 CAS 1997年第1期59-62,共4页
Abstract: The force sensing resistor (FSR) and its con’struction and characteristic are described. By using the optimal electronic interface, the end result which is a direct proportionality between force and voltage... Abstract: The force sensing resistor (FSR) and its con’struction and characteristic are described. By using the optimal electronic interface, the end result which is a direct proportionality between force and voltage is obtained. The circuits of application for force and position measurements in the robotic control are given. The experiment that FSRs are placed on the fingers of BH - 1 dexterous hand as tactile sensors to measure the contacting forces shows FSR’s force sensitivity is optimized for use in the control of robot contacting with environment. 展开更多
关键词 Force Measurement Semiconductor Sensing Technology Tactile Sen-sors
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高端精密装备精度测量基础理论与方法 被引量:9
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作者 谭久彬 蒋庄德 +12 位作者 雒建斌 叶鑫 邾继贵 刘小康 刘巍 李宏伟 谈宜东 胡鹏程 胡春光 杨凌辉 赖一楠 苗鸿雁 王岐东 《中国科学基金》 CSSCI CSCD 北大核心 2022年第6期955-962,共8页
完整而精确的测量信息获取是装备设计优化、制造过程调控和服役状态保持的基础,是实现重大装备“上水平”“高性能”的内在要素。本文分析了我国高端精密装备精度测量基础理论发展所面临的重大需求挑战,总结了当前高端精密装备制造精度... 完整而精确的测量信息获取是装备设计优化、制造过程调控和服役状态保持的基础,是实现重大装备“上水平”“高性能”的内在要素。本文分析了我国高端精密装备精度测量基础理论发展所面临的重大需求挑战,总结了当前高端精密装备制造精度测量理论、方法与技术领域的主要进展,凝炼了该领域未来5~10年的重大关键科学问题,探讨了前沿研究方向和科学基金资助战略。 展开更多
关键词 精密测量 高端精密装备 可溯源 极限测量 多场耦合测量 半导体测量 大尺寸测量
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Analytical Model for Calculating Trapped Charge in a-Si:H and Its Relative Error Analysis
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作者 WAN Xinheng XU Zhongyang ZOU Xuecheng(Huanzhong Univ.of Sci.and Tech.,Wuhan 430074,CHN ) 《Semiconductor Photonics and Technology》 CAS 1996年第2期84-89,共6页
Using a Taylor series expansion for the Fermi-Dirac occupation function,an accurate analytical model is developed for calculating the trapped-charge density in a-Si: H considering deep and tail states simultaneously w... Using a Taylor series expansion for the Fermi-Dirac occupation function,an accurate analytical model is developed for calculating the trapped-charge density in a-Si: H considering deep and tail states simultaneously without simplification.This is followed by the investigation of the relative errors of the localized trapped charge density in a-Si:H at all temperatures as a function of the quasi-Fermi level in the band gap calculated from three published analytical models and our above model. The results suggest that the relative errors of all these models increase notably as Efn is very closed to Ec(e.g.,-0.01 eV< Efn-Ec).It is also noticed that the relative errors of all above models become larger normally the greater is the value of temperature.A detailed analysis indicates that each model has its own applicability with various temperatures and various positions of the Fermi level. 展开更多
关键词 Amorphous Semiconductors Amorphous Silicon Films Density Measurement Error Analysis
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Strain measurement using frequency modulation fiber optic interferometer
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作者 LIChangchun LUOFei 《Semiconductor Photonics and Technology》 CAS 1995年第1期31-34,共4页
The method for measuring the strain of an object using an optical fiber and a frequency modulation(FM) coupled cavity semiconductor laser is proposed.This method uses the coherent FM heterodyne principle of the Michel... The method for measuring the strain of an object using an optical fiber and a frequency modulation(FM) coupled cavity semiconductor laser is proposed.This method uses the coherent FM heterodyne principle of the Michelson interferometer and can avoid the π/2 nonreciprocal phase bias and phase shifting problem existing in general fiber optic interferential sensors, the maximum detection range is limited by the coherent length of the semiconductor laser and its relative factor. 展开更多
关键词 Frequency Modulation Fiber Optic Sensors Semiconductor Lasers Michelson Interferometer
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High Accuracy Zoom Magnification Measurement
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作者 曾政东 孙长库 +2 位作者 郑义忠 YAN Mingdong CHANG Sengkeong 《Transactions of Tianjin University》 EI CAS 2010年第4期289-294,共6页
A precise zoom magnification is important for semiconductor industry and biomedical research. A novel measurement method is demonstrated for optical zoom magnification measurement in this paper. The magnification is o... A precise zoom magnification is important for semiconductor industry and biomedical research. A novel measurement method is demonstrated for optical zoom magnification measurement in this paper. The magnification is obtained by pattern correction between barcode image formed by optical zoom and reference image generated by an ideal optical model. Measurement accuracy which is better than 0.06% has been achieved for optical zoom magnification. Compared with traditional concept, the measurement results are only dependent on two line edges. The barcode correlation method can achieve higher accuracy and better robustness by using the information over the whole field of view. 展开更多
关键词 MAGNIFICATION MICROSCOPE optical zoom BARCODE image processing measurement apparatus
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Applications of MEMS devices in nanosatellite
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作者 You Zheng Li Bin Yu Shijie Zhang Gaofei 《Engineering Sciences》 EI 2012年第5期33-35,57,共4页
micro-electro-mechanical system (MEMS) device has the advantages of both electronic system and mechanical system. With the development of MEMS devices for satellite, it is possible to establish much lighter and smal... micro-electro-mechanical system (MEMS) device has the advantages of both electronic system and mechanical system. With the development of MEMS devices for satellite, it is possible to establish much lighter and smaller nanosatellites with higher performance and longer lifecyele. The power consumption of MEMS devices is usually much lower than that of traditional devices, which will greatly reduce the consumption of power. For its small size and simple architecture, MEMS devices can be easily integrated together and achieve redundancy. Launched on April 18, 2004, NS - 1 is a nanosatellite for science exploration and MEMS devices test. A mass of science data and images were acquired during its running. NS - 1 weights less than 25 kg. It consists of several MEMS devices, including one miniature inertial measurement unit(MIMU) , three micro complementary metal oxide semiconductor (CMOS)cameras, one sun sensor, three momentum wheels, and one micro magnetic sensor. By applying micro components based on MEMS technology, NS - 1 has made success in the experiments of integrative design, manufacture, and MEMS devices integration. In this paper, some MEMS devices for nanosatellite and picosatellite are introduced, which have been tested on NS -1 nanosatellite or on the ground. 展开更多
关键词 MEMS devices NS - 1 nanosatellite lighter weight and lower power consumption
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Uncertainties of "in v/vo" Dosimetry Using Semiconductors
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作者 Zeina Al Kattar Hanna El Balaa Saeed Zahran 《Journal of Life Sciences》 2015年第3期120-126,共7页
The purpose of the present study is to evaluate the uncertainties of in vivo dosimetry measured with diode detectors for conformal radiation therapy techniques in order to define appropriate tolerance levels for pelvi... The purpose of the present study is to evaluate the uncertainties of in vivo dosimetry measured with diode detectors for conformal radiation therapy techniques in order to define appropriate tolerance levels for pelvis and breast treatment in MEIH (Middle East Institute of Health). The present work is carried out on 30-472 and 30-473 diode detectors irradiated by 4 and 15MV photon beams of a medical linear accelerator Synergy from ELEKTA. Dose computation is performed with Pinnacle 7.4 k treatment planning system. First, an estimation of the uncertainties in a simple geometric case, using a water-equivalent solid phantom is done. Secondly, each treatment parameter such as field size, beam angle, beam modifiers and source-skin distance is evaluated in order to simulate the conformal radiation treatments used in the present institution for the main anatomical sites. Interpretation of entrance dose in-vivo measurements requires the determination of appropriate tolerance levels. Indeed, the authors found that the 5% action level proposed in the literature underestimates the uncertainties in the treatment process. A method for the evaluation of tolerance/action levels related to the different anatomical sites is developed. By the end of the present study the authors have developed an integrated monitoring system that offers accurate information about the dose received by patients. 展开更多
关键词 In vivo dosimetry conformal radiation therapy entrance dose diode detectors UNCERTAINTIES tolerance levels integratedsystem.
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基于LED串联电阻的结温测量方法 被引量:1
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作者 张家伟 刘一霖 王文峰 《光学与光电技术》 2017年第5期45-48,共4页
理论分析了LED的电流/电压(I/V)特性与PN结结温的关系,揭示了温度函数的串联电阻项对I/V曲线的影响,并应用这一影响提出了一种基于串联电阻测量LED结温的方法。该方法只需多点记录LED工作状态的电流、电压值,对数据进行模型拟合就可以得... 理论分析了LED的电流/电压(I/V)特性与PN结结温的关系,揭示了温度函数的串联电阻项对I/V曲线的影响,并应用这一影响提出了一种基于串联电阻测量LED结温的方法。该方法只需多点记录LED工作状态的电流、电压值,对数据进行模型拟合就可以得出LED的结温,测试仪器要求低,测量过程简单,可与LED老化工艺同步进行,是一种简单、有效的批量检测LED结温的方法。利用该方法测量了6组LED灯具,测量结果与传统正向电压法的结果具有较高的一致性,证实了该方法的可行性。 展开更多
关键词 发光二极管 结温测量 正向电压法 串联电阻 电流电压曲线 半导体测量技术
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用改进的Rymaszewski公式及方形四探针法测定微区的方块电阻 被引量:7
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作者 刘新福 孙以材 +1 位作者 张艳辉 陈志永 《物理学报》 SCIE EI CAS CSCD 北大核心 2004年第8期2461-2466,共6页
提出用改进的Rymaszewski公式并使用方形四探针法测试无图形大型硅片微区薄层电阻的方法 ,从理论上推导出方形四探针产生游移时的Rymaszewski改进公式 ,讨论探针游移对测试结果的影响 .制定出可操作的测试方法 ,对实际样品进行测试验证 。
关键词 四探针技术 方形四探针 微区电阻 探针游移 半导体测量 Rymaszewski公式
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Radio-frequency measurement in semiconductor quantum computation 被引量:2
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作者 TianYi Han MingBo Chen +3 位作者 Gang Cao HaiOu Li Ming Xiao GuoPing Guo 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2017年第5期36-48,共13页
Semiconductor quantum dots have attracted wide interest for the potential realization of quantum computation. To realize efficient quantum computation, fast manipulation and the corresponding readout are necessary. In... Semiconductor quantum dots have attracted wide interest for the potential realization of quantum computation. To realize efficient quantum computation, fast manipulation and the corresponding readout are necessary. In the past few decades, considerable progress of quantum manipulation has been achieved experimentally. To meet the requirements of high-speed readout, radio-frequency (RF) measurement has been developed in recent years, such as RF-QPC (radio-frequency quantum point contact) and RF-DGS (radio-frequency dispersive gate sensor). Here we specifically demonstrate the principle of the radio-frequency reflectometry, then review the development and applications of RF measurement, which provides a feasible way to achieve high-bandwidth readout in quantum coherent control and also enriches the methods to study these artificial mesoscopic quantum systems. Finally, we prospect the future usage of radio-frequency reflectometry in scaling-up of the quantum computing models. 展开更多
关键词 quantum dot radio-frequency reflectometry RF-QPC RF-DGS
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Determination of capacitance-voltage characteristics of organic semiconductor devices by combined current-voltage and voltage decay measurements
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作者 LI Nuo GAO XinDong +3 位作者 DING BaoFu SUN XiaoYu DING XunMin HOU XiaoYuan 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第4期826-829,共4页
We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capa... We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses. 展开更多
关键词 capacitance-voltage characteristics organic semiconductor device voltage-time characteristics
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