We reported an efficient diode pumped Nd∶YVO4 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7.5 W, 2.81 W average output power ...We reported an efficient diode pumped Nd∶YVO4 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7.5 W, 2.81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37.5%, and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.展开更多
It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of th...It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.展开更多
基金National Natural Science Foundation of China (50602037) Award Fund of Shandong Excellent Young Scientists(2005BS04001)
文摘We reported an efficient diode pumped Nd∶YVO4 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7.5 W, 2.81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37.5%, and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.
文摘It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.
