Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim...Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.展开更多
An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift...An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.展开更多
基金National Natural Science Foundation of China(60766002)Foundation of Science Technology Department of Guizhou Province((2007)2177)+1 种基金Key Foundation of Education Department of Guizhou(2006212)Carving out Foundation of University Man of Science and Technology Office of Guiyang((2006)21-4).
基金National Natural Science Foundation of China(60766002)the Foundation of Science Technology Department of Guizhou Province((2007)2177)+1 种基金the Key Foundation of Education Department of Guizhou(2006212)The specific Foundation of the High-level Talents of Guizhou Province
基金Supported by the Foundation of the National Natural Science Foundation of China (60766002)the Science Technology Depart-ment of Guizhou Province (2007 -2177)+2 种基金the Key Foundation of Education Department of Guizhou (2006212)the Specific Foundation of the High-level Talents of Guizhou Provincethe Carving out Foundation of University Man of Science and Tech-nology Office of Guiyang(2006212)
文摘Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.
基金supported by the National Ministries and Commissions (Grant Nos.51308040203 and 6139801)the Fundamental Research Funds for the Central Universities (Grant Nos.72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2010JQ8008)
文摘An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.
