The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 5...The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.展开更多
Nanostructured gallium‐doped zinc oxide （GZO） thin films were fabricated on piezoelectric sub‐strates. The GZO thin films with nanodisk/nanoflower morphologies were prepared by a simple spin‐coating process follo...Nanostructured gallium‐doped zinc oxide （GZO） thin films were fabricated on piezoelectric sub‐strates. The GZO thin films with nanodisk/nanoflower morphologies were prepared by a simple spin‐coating process followed by one‐step hydrothermal treatment. Addition of polymer during hydrothermal treatment resulted in nanodisk and nanoflower morphologies. The morphology, microstructure and chemical composition of thin films prepared under different conditions were examined by field‐emission scanning electron microscopy （FE‐SEM）, X‐ray diffraction （XRD） and Raman spectroscopy. The XRD and FE‐SEM investigations confirmed that the GZO nanodisks, na‐norods and nanoflowers formed on the AlN/Si substrates were all wurtzite phase. Green fluorescent protein （GFP） was immobilized on the as‐synthesized GZO nanostructured materials by a dipping process. Atomic force microscopy （AFM） and fluorescence spectroscopy measurements were con‐ducted to confirm the surface binding nature of GFP on the GZO nanostructures to determine their suitability for use in sensor applications and bioimaging techniques. Trace‐level addition of GFP to the GZO nanostructures resulted in a fluorescence response, revealing good activity for ultraviolet light sensor applications.展开更多
文摘The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.
基金supported by King Saud University, Vice Deanship of Research Chairs
文摘Nanostructured gallium‐doped zinc oxide （GZO） thin films were fabricated on piezoelectric sub‐strates. The GZO thin films with nanodisk/nanoflower morphologies were prepared by a simple spin‐coating process followed by one‐step hydrothermal treatment. Addition of polymer during hydrothermal treatment resulted in nanodisk and nanoflower morphologies. The morphology, microstructure and chemical composition of thin films prepared under different conditions were examined by field‐emission scanning electron microscopy （FE‐SEM）, X‐ray diffraction （XRD） and Raman spectroscopy. The XRD and FE‐SEM investigations confirmed that the GZO nanodisks, na‐norods and nanoflowers formed on the AlN/Si substrates were all wurtzite phase. Green fluorescent protein （GFP） was immobilized on the as‐synthesized GZO nanostructured materials by a dipping process. Atomic force microscopy （AFM） and fluorescence spectroscopy measurements were con‐ducted to confirm the surface binding nature of GFP on the GZO nanostructures to determine their suitability for use in sensor applications and bioimaging techniques. Trace‐level addition of GFP to the GZO nanostructures resulted in a fluorescence response, revealing good activity for ultraviolet light sensor applications.
