报道了一种基于全息曝光技术实现的20波长分布反馈式(DFB)半导体激光器阵列。传统的DFB半导体激光器光栅一般是利用电子束曝光的方式来实现,这种方式精度较高,然而成本昂贵并且非常耗时,不适合大规模生产应用,而全息方式制作容易,成本很...报道了一种基于全息曝光技术实现的20波长分布反馈式(DFB)半导体激光器阵列。传统的DFB半导体激光器光栅一般是利用电子束曝光的方式来实现,这种方式精度较高,然而成本昂贵并且非常耗时,不适合大规模生产应用,而全息方式制作容易,成本很低,适合大规模生产应用。实验结果表明,利用全息曝光技术实现的DFB激光器阵列具有良好的光电特性,激光器阵列的波长偏差在-0.5 nm至0.45 nm,阈值电流在13m A至17 m A,斜效率为0.4 W/A;50 m A偏置电流下,边模抑制比都大于40 d B。展开更多
In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. Th...In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.展开更多
A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift （EPS） technique is presented and studied. Since there are multi-order reflections in EPS structure and if th...A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift （EPS） technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly de- signed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between -lst order （main mode） and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent n phase shift （n-EPS） is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the -1st order wavelength is around the gain peak, while the stable single longitudinal mode （SLM） operation of the -lst order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation （32 dB extinction ratio） are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.展开更多
文摘报道了一种基于全息曝光技术实现的20波长分布反馈式(DFB)半导体激光器阵列。传统的DFB半导体激光器光栅一般是利用电子束曝光的方式来实现,这种方式精度较高,然而成本昂贵并且非常耗时,不适合大规模生产应用,而全息方式制作容易,成本很低,适合大规模生产应用。实验结果表明,利用全息曝光技术实现的DFB激光器阵列具有良好的光电特性,激光器阵列的波长偏差在-0.5 nm至0.45 nm,阈值电流在13m A至17 m A,斜效率为0.4 W/A;50 m A偏置电流下,边模抑制比都大于40 d B。
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.
基金supported by the National Natural Science Foundation of China(Grant Nos.61306068 and 61435014)the Nature Science Foundation of Jiangsu Province of China(Grant Nos.BK20130585,BK2012058 and BK20140414)National High-Tech R&D Program of China(Grand No.SS2015AA012302)
文摘A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift （EPS） technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly de- signed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between -lst order （main mode） and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent n phase shift （n-EPS） is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the -1st order wavelength is around the gain peak, while the stable single longitudinal mode （SLM） operation of the -lst order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation （32 dB extinction ratio） are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.
