A continuous semisolid extending extrusion (CSEP) method was proposed. Temperature field and metal flow during continuous semisolid extending extrusion process of 6201 alloy tube were studied. During the process, th...A continuous semisolid extending extrusion (CSEP) method was proposed. Temperature field and metal flow during continuous semisolid extending extrusion process of 6201 alloy tube were studied. During the process, the temperature in the roll-shoe cavity decreases gradually, and the isothermal lines of the alloy deviate from the shoe side to the work roll side in the roll–shoe gap. Metal flow velocity decreases gradually from the surface of the work roll to the surface of the shoe. In the extrusion mould, alloy temperature decreases gradually from the entrance to the exit and from the center to the sidewall of the mould. The extending cavity is radially filled with the alloy. The flow lines in the tube corresponding to the centers of the splitflow orifices and the welding gaps are dense, and the corresponding harness values are high; there are 8 transitional bands between them. In order to prepare 6201 alloy tubes with good surface quality, the pouring temperature from 750 ℃ to 780 ℃ was suggested.展开更多
This work aimed to fabricate B4C reinforced aluminum matrix composites via blended powder semisolid forming that is an implementation of the benefits of semisolid forming to the powder metallurgy. Al7075 elements were...This work aimed to fabricate B4C reinforced aluminum matrix composites via blended powder semisolid forming that is an implementation of the benefits of semisolid forming to the powder metallurgy. Al7075 elements were incrementally added to ethanol solution under mechanical mixing. Al7075 constituents and B4C particles were blended in a high energy ball mill. Cold compacted Al7075/B4C blends were pressed at semisolid state. The effects of the size of the matrix(20, 45 and 63 μm), reinforcing volume fraction(5%, 10% and 20%) and semisolid compaction pressure(50 and 100 MPa) on the morphology, microstructure, density, hardness, compression and bending strength were thoroughly analyzed. Experimental results revealed that the highest microstructural uniformity was achieved when large B4C particles(45 μm) were distributed within the small particles(20 μm) of the matrix phase. Composites with matrix particles larger than reinforcing phase indicated agglomerations in loadings more than 10%(volume fraction). Agglomerated regions resisted against penetration of the liquid phase to the pores and lowered the density and strength of these composites. Composites with 20 μm Al7075 and 20%(volume fraction) 45 μm B4C powder pressed under 100 MPa exhibited the highest values of hardness(HV 190) and compressive strength(336 MPa).展开更多
Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be rev...Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.展开更多
To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption...To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption, simplification of device fabrication as well as optimization of device structure and geometry, are required. The usage of 1D nanomaterials is attractive due to the outstanding light coupling effect, the ease of fabrication, and integration with one-dimensional(1-D) semiconductor materials. The light absorption efficiency can be enhanced significantly, and the corresponding light-toelectricity conversion efficiency can be as high as their bulk counterparts. Also, the amount of active materials used can be reduced. This review summarizes the recent development of 1-D nanomaterials for photovoltaic applications, including the anti-reflection, the light absorption,the minority diffusion, and the semiconductor junction properties. With solid progress and prospect shown in the past 10 years, 1-D semiconductor nanomaterials are attractive and promising for the realization of high-efficiency and low-cost solar cells.展开更多
This paper deals with the combination of point phonon and phason forces applied in the interior of infinite planes and half-planes of 1D quasicrystal bi-materials. Based on the general solution of quasicrystals, a ser...This paper deals with the combination of point phonon and phason forces applied in the interior of infinite planes and half-planes of 1D quasicrystal bi-materials. Based on the general solution of quasicrystals, a series of displacement functions are adopted to obtain Green's functions for infinite planes and bi-material planes composed of two half-planes in the closed form, when the two half-planes are supposed to be ideally bonded or to be in smooth contact. Since the physical quantities can be readily calculated without the need of performing any transform operations, Green's functions are very convenient to be used in the study of point defects and inhomogeneities in the quasicrystal materials.展开更多
Explorations of new second harmonic generation materials in Ag^+-Hg^2+/Bi^3+-selenites systems afforded three new silver selenium oxides, namely, Ag4 Hg(SeO3)2(SeO4)(1), Ag2Bi2(SeO3)3(SeO4)(2) and Ag5 Bi(SeO3)4(3). Th...Explorations of new second harmonic generation materials in Ag^+-Hg^2+/Bi^3+-selenites systems afforded three new silver selenium oxides, namely, Ag4 Hg(SeO3)2(SeO4)(1), Ag2Bi2(SeO3)3(SeO4)(2) and Ag5 Bi(SeO3)4(3). They exhibit flexible crystal chemistry. Compounds 1 and 2 are mixed valence selenium oxides containing Se(IV) and Se(VI) cations simultaneously. Compounds 1 and 3 exhibit a 3 D open framework with 4-, 6-and 8-member polyhedral ring tunnels along a, b and c axes. Compound 1 crystallized in a polar space group and could display a subtle frequency doubling efficiency about 35% of the commercial KH2PO4(KDP). UV-vis-NIR spectra reveal that compounds 1–3 are wide-band semiconductors with the optical bandgaps of 3.11, 3.65, 3.58 e V respectively. Theoretical calculations disclose that compounds2 and 3 are indirect band gap structures and their bandgaps are determined by Ag, Bi, Se and O atoms together.展开更多
基金Projects (51034002, 50974038) supported by the National Natural Science Foundation of ChinaProject (132002) supported by the Fok Ying Tong Education FoundationProject (2011CB610405) supported by National Basic Research Program of China
文摘A continuous semisolid extending extrusion (CSEP) method was proposed. Temperature field and metal flow during continuous semisolid extending extrusion process of 6201 alloy tube were studied. During the process, the temperature in the roll-shoe cavity decreases gradually, and the isothermal lines of the alloy deviate from the shoe side to the work roll side in the roll–shoe gap. Metal flow velocity decreases gradually from the surface of the work roll to the surface of the shoe. In the extrusion mould, alloy temperature decreases gradually from the entrance to the exit and from the center to the sidewall of the mould. The extending cavity is radially filled with the alloy. The flow lines in the tube corresponding to the centers of the splitflow orifices and the welding gaps are dense, and the corresponding harness values are high; there are 8 transitional bands between them. In order to prepare 6201 alloy tubes with good surface quality, the pouring temperature from 750 ℃ to 780 ℃ was suggested.
基金Tabriz Branch,Islamic Azad University for the financial support of this research,which is based on a research project contract
文摘This work aimed to fabricate B4C reinforced aluminum matrix composites via blended powder semisolid forming that is an implementation of the benefits of semisolid forming to the powder metallurgy. Al7075 elements were incrementally added to ethanol solution under mechanical mixing. Al7075 constituents and B4C particles were blended in a high energy ball mill. Cold compacted Al7075/B4C blends were pressed at semisolid state. The effects of the size of the matrix(20, 45 and 63 μm), reinforcing volume fraction(5%, 10% and 20%) and semisolid compaction pressure(50 and 100 MPa) on the morphology, microstructure, density, hardness, compression and bending strength were thoroughly analyzed. Experimental results revealed that the highest microstructural uniformity was achieved when large B4C particles(45 μm) were distributed within the small particles(20 μm) of the matrix phase. Composites with matrix particles larger than reinforcing phase indicated agglomerations in loadings more than 10%(volume fraction). Agglomerated regions resisted against penetration of the liquid phase to the pores and lowered the density and strength of these composites. Composites with 20 μm Al7075 and 20%(volume fraction) 45 μm B4C powder pressed under 100 MPa exhibited the highest values of hardness(HV 190) and compressive strength(336 MPa).
文摘Discussed is a review and perspective of architecture, materials and process technology for dynamic random access memory(DRAM) applications. Key challenges of the transistor and capacitor scaling from DRAM will be reviewed. To continue scaling down, multi-gate devices with very thin silicon channels are most promising. Several architectures like Fin-field effect transistor(Fin-FET), Wafer bonded double gate and silicon on nothing(SON) gate-all-around have been demonstrated with good electrical characteristics. An overview of the evolution of capacitor technology is also presented from the early days of planar poly/insulator/silicon(PIS) capacitors to the metal/insulator/metal(MIM) capacitors used for today 50nm technology node and below. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in DRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability used in MIM architecture.
基金supported by the Early Career Scheme of the Research Grants Council of Hong Kong SARChina(City U 139413)+4 种基金the National Natural Science Foundation of China(51202205 and 61504151)the State Key Laboratory of Multiphase Complex Systems(MPCS-2014-C-01 and MPCS-2015-A-04)the Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20140419115507588)a Grant from the Shenzhen Research InstituteCity University of Hong Kong
文摘To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption, simplification of device fabrication as well as optimization of device structure and geometry, are required. The usage of 1D nanomaterials is attractive due to the outstanding light coupling effect, the ease of fabrication, and integration with one-dimensional(1-D) semiconductor materials. The light absorption efficiency can be enhanced significantly, and the corresponding light-toelectricity conversion efficiency can be as high as their bulk counterparts. Also, the amount of active materials used can be reduced. This review summarizes the recent development of 1-D nanomaterials for photovoltaic applications, including the anti-reflection, the light absorption,the minority diffusion, and the semiconductor junction properties. With solid progress and prospect shown in the past 10 years, 1-D semiconductor nanomaterials are attractive and promising for the realization of high-efficiency and low-cost solar cells.
基金Project supported by the National Natural Science Foundation of China (No 10702077)the Alexander von Humboldt Foundation in Germany
文摘This paper deals with the combination of point phonon and phason forces applied in the interior of infinite planes and half-planes of 1D quasicrystal bi-materials. Based on the general solution of quasicrystals, a series of displacement functions are adopted to obtain Green's functions for infinite planes and bi-material planes composed of two half-planes in the closed form, when the two half-planes are supposed to be ideally bonded or to be in smooth contact. Since the physical quantities can be readily calculated without the need of performing any transform operations, Green's functions are very convenient to be used in the study of point defects and inhomogeneities in the quasicrystal materials.
基金supported by the National Natural Science Foundation of China (21773244 and 21875248)the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB20000000)the Natural Science Foundation of Fujian Province (2018J01025)
文摘Explorations of new second harmonic generation materials in Ag^+-Hg^2+/Bi^3+-selenites systems afforded three new silver selenium oxides, namely, Ag4 Hg(SeO3)2(SeO4)(1), Ag2Bi2(SeO3)3(SeO4)(2) and Ag5 Bi(SeO3)4(3). They exhibit flexible crystal chemistry. Compounds 1 and 2 are mixed valence selenium oxides containing Se(IV) and Se(VI) cations simultaneously. Compounds 1 and 3 exhibit a 3 D open framework with 4-, 6-and 8-member polyhedral ring tunnels along a, b and c axes. Compound 1 crystallized in a polar space group and could display a subtle frequency doubling efficiency about 35% of the commercial KH2PO4(KDP). UV-vis-NIR spectra reveal that compounds 1–3 are wide-band semiconductors with the optical bandgaps of 3.11, 3.65, 3.58 e V respectively. Theoretical calculations disclose that compounds2 and 3 are indirect band gap structures and their bandgaps are determined by Ag, Bi, Se and O atoms together.