荆门特高压变电站扩建工程新增3台1000kV断路器,采用气体绝缘半封闭式组合电器(hybrid gas insulated switchgear,HGIS),1000kV主接线由双断路器过渡接线完善为1个半断路器接线。结合该扩建工程的建设特点,分析了1000kV HGIS的"2+1...荆门特高压变电站扩建工程新增3台1000kV断路器,采用气体绝缘半封闭式组合电器(hybrid gas insulated switchgear,HGIS),1000kV主接线由双断路器过渡接线完善为1个半断路器接线。结合该扩建工程的建设特点,分析了1000kV HGIS的"2+1"和"3+0"布置方式,研究了"3+0"方式面临的前期与本期HGIS基础不均匀沉降问题,计算了前、后2期基础的不均匀沉降量,提出了增加防沉降的伸缩波纹管补偿单元的方法以保障设备的安全运行。展开更多
Based on coupled-mode theo ry , the eigenvalue equation of five-layered long-period fiber grating(LPFG) sens or with Ag film and gas-sensitive film overlays are firstly studied. The probl em of resolving complex eigen...Based on coupled-mode theo ry , the eigenvalue equation of five-layered long-period fiber grating(LPFG) sens or with Ag film and gas-sensitive film overlays are firstly studied. The probl em of resolving complex eigenvalue equation on five-layered LPFG is analyzed, a nd the method of resolution is also given. Then the eigenvalue equation of three -layered metal cladding LPFG is analyzed, and the complex transcendental equati on is also discussed. The computing result shows that the coupling between the l ow-order EH modes and the core mode is much stronger than that between the low -order HE modes and the core mode.展开更多
Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-fa...Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-favoring position due to the slow growth rate from SiH 4. In this case, a Si buffer that isolates the effect of substrate on epilayer could not be grown, which results in a pit penetrating into epilayer and buffer. The FWHM is 0.055° in DCXRD from SiH 4. The presence of diffraction fringes is an indication of an excellent crystalline quality. The roughness of the surface is improved if grown by Si 2H 6; however, the crystal quality of the Ge x Si 1- x material became worse than that from SiH 4 due to much larger growth rate from Si 2H 6. The content of Ge is obtained from DCXRD, which indicates the growth rate from Si 2H 6 is largest, then GeH 4, and that from SiH 4 is least.展开更多
This paper is aimed at the actual conditions of disaster caused by gas in small and medium-sized coal mines. A new gas concentration monitoring system for coal mines is developed on the basis of gas-sensing detection ...This paper is aimed at the actual conditions of disaster caused by gas in small and medium-sized coal mines. A new gas concentration monitoring system for coal mines is developed on the basis of gas-sensing detection and single-chip control. The monitoring system uses the tin oxide as the main material of N-type semiconductor gas sensors, be- cause it has good sensitive characteristics for the flammable and explosive gas ( such as methane, carbon monoxide). The QM-N5-semiconductor gas sensor is adopted to detect the output values of the resistance under the different gas con- centrations. The system, designedly, takes the AT89C51 digital chip as the core of the circuit processing hardware structure to analyze and judge the input values of the resistance, and then achieve the control and alarm for going beyond the limit of gas concentration. The gas concentration monitoring system has man), advantages including simple in struc- ture, fast response time, stable performance and low cost. Thus, it can be widely used to monitor gas concentration and provide early wamings in small and medium-sized coal mines.展开更多
Semi-solid processing of A380 aluminum alloy was performed by gas induced semi-solid(GISS)process.The effects of argon inert gas flow rate,starting temperature and duration of gas purging as key GISS parameters and al...Semi-solid processing of A380 aluminum alloy was performed by gas induced semi-solid(GISS)process.The effects of argon inert gas flow rate,starting temperature and duration of gas purging as key GISS parameters and also modification with Sr on the structural refinements,hardness and impact strength of GISS alloys were investigated.Microstructural evolution shows that there is an important effect of the pouring temperature and Sr addition on the morphology and size of primaryα(A1)in the alloy to change from coarse dendritic to fine globular structure.The best sample which has fine grains of 51.18μm in average size and a high level of globularity of 0.89 is achieved from a GISS processing of Sr modified alloy in which the gas purging started at 610℃.The impact strength of the GISS optimized samples((4.67±0.18)J/cm^(2))shows an increase of about 40%with respect to the as-cast sample due to the globular structure and fibrous Si morphology.Moreover,the hardness of the optimized GISS sample((89.34±2.85)HB)increases to(93.84±3.14)HB by modification with the Sr and GISS process.The fracture surface of Sr modified alloy is also dominated by complex topography showing typical ductile fracture features.展开更多
Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heati...Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.展开更多
Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, whil...Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.展开更多
文摘荆门特高压变电站扩建工程新增3台1000kV断路器,采用气体绝缘半封闭式组合电器(hybrid gas insulated switchgear,HGIS),1000kV主接线由双断路器过渡接线完善为1个半断路器接线。结合该扩建工程的建设特点,分析了1000kV HGIS的"2+1"和"3+0"布置方式,研究了"3+0"方式面临的前期与本期HGIS基础不均匀沉降问题,计算了前、后2期基础的不均匀沉降量,提出了增加防沉降的伸缩波纹管补偿单元的方法以保障设备的安全运行。
基金"Shu Guang"Plan of Education Committee of Shanghai (02SG32) Natural Science Foundation of ScienceCommittee of Shanghai(03ZR14071)
文摘Based on coupled-mode theo ry , the eigenvalue equation of five-layered long-period fiber grating(LPFG) sens or with Ag film and gas-sensitive film overlays are firstly studied. The probl em of resolving complex eigenvalue equation on five-layered LPFG is analyzed, a nd the method of resolution is also given. Then the eigenvalue equation of three -layered metal cladding LPFG is analyzed, and the complex transcendental equati on is also discussed. The computing result shows that the coupling between the l ow-order EH modes and the core mode is much stronger than that between the low -order HE modes and the core mode.
基金The National Natural Science Foundation of China
文摘Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-favoring position due to the slow growth rate from SiH 4. In this case, a Si buffer that isolates the effect of substrate on epilayer could not be grown, which results in a pit penetrating into epilayer and buffer. The FWHM is 0.055° in DCXRD from SiH 4. The presence of diffraction fringes is an indication of an excellent crystalline quality. The roughness of the surface is improved if grown by Si 2H 6; however, the crystal quality of the Ge x Si 1- x material became worse than that from SiH 4 due to much larger growth rate from Si 2H 6. The content of Ge is obtained from DCXRD, which indicates the growth rate from Si 2H 6 is largest, then GeH 4, and that from SiH 4 is least.
基金supported by the program of Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Provincethe Hunan Province and Xiangtan City Natural Science Joint Foundation(No.09JJ8005)+1 种基金the Industrial Cultivation Program of Scientific and Technological Achievements in Higher Educational Institutions of Hunan Province(No.10CY008)the Technologies R & D of Hunan Province (No.2010CK3031)
文摘This paper is aimed at the actual conditions of disaster caused by gas in small and medium-sized coal mines. A new gas concentration monitoring system for coal mines is developed on the basis of gas-sensing detection and single-chip control. The monitoring system uses the tin oxide as the main material of N-type semiconductor gas sensors, be- cause it has good sensitive characteristics for the flammable and explosive gas ( such as methane, carbon monoxide). The QM-N5-semiconductor gas sensor is adopted to detect the output values of the resistance under the different gas con- centrations. The system, designedly, takes the AT89C51 digital chip as the core of the circuit processing hardware structure to analyze and judge the input values of the resistance, and then achieve the control and alarm for going beyond the limit of gas concentration. The gas concentration monitoring system has man), advantages including simple in struc- ture, fast response time, stable performance and low cost. Thus, it can be widely used to monitor gas concentration and provide early wamings in small and medium-sized coal mines.
文摘Semi-solid processing of A380 aluminum alloy was performed by gas induced semi-solid(GISS)process.The effects of argon inert gas flow rate,starting temperature and duration of gas purging as key GISS parameters and also modification with Sr on the structural refinements,hardness and impact strength of GISS alloys were investigated.Microstructural evolution shows that there is an important effect of the pouring temperature and Sr addition on the morphology and size of primaryα(A1)in the alloy to change from coarse dendritic to fine globular structure.The best sample which has fine grains of 51.18μm in average size and a high level of globularity of 0.89 is achieved from a GISS processing of Sr modified alloy in which the gas purging started at 610℃.The impact strength of the GISS optimized samples((4.67±0.18)J/cm^(2))shows an increase of about 40%with respect to the as-cast sample due to the globular structure and fibrous Si morphology.Moreover,the hardness of the optimized GISS sample((89.34±2.85)HB)increases to(93.84±3.14)HB by modification with the Sr and GISS process.The fracture surface of Sr modified alloy is also dominated by complex topography showing typical ductile fracture features.
基金Projects(61376076,61274026,61377024)supported by the National Natural Science Foundation of ChinaProjects(12C0108,13C321)supported by the Scientific Research Fund of Hunan Provincial Education Department,ChinaProjects(2013FJ2011,2013FJ4232)supported by the Science and Technology Plan of Hunan Province,China
文摘Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.
文摘Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.