在 SOI(Silicon on Insulator)结构硅膜上面生长一层 Si Ge合金 ,采用类似 SOICMOS工艺制作成具有Si Ge沟道的 SOICMOS集成电路。该电路不仅具有 SOICMOS电路的优点 ,而且因为 Si Ge中的载流子迁移率明显高于 Si中载流子的迁移率 ,所以...在 SOI(Silicon on Insulator)结构硅膜上面生长一层 Si Ge合金 ,采用类似 SOICMOS工艺制作成具有Si Ge沟道的 SOICMOS集成电路。该电路不仅具有 SOICMOS电路的优点 ,而且因为 Si Ge中的载流子迁移率明显高于 Si中载流子的迁移率 ,所以提高了电路的速度和驱动能力。另外由于两种极性的 SOI MOSFET都采用 Si Ge沟道 ,就避免了只有 SOIPMOSFET采用 Si Ge沟道带来的选择性生长 Si Ge层的麻烦。采用二维工艺模拟得到了器件的结构 ,并以此结构参数进行了器件模拟。模拟结果表明 ,N沟和 P沟两种 MOSFET的驱动电流都有所增加 。展开更多
FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurre...FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.展开更多
文摘在 SOI(Silicon on Insulator)结构硅膜上面生长一层 Si Ge合金 ,采用类似 SOICMOS工艺制作成具有Si Ge沟道的 SOICMOS集成电路。该电路不仅具有 SOICMOS电路的优点 ,而且因为 Si Ge中的载流子迁移率明显高于 Si中载流子的迁移率 ,所以提高了电路的速度和驱动能力。另外由于两种极性的 SOI MOSFET都采用 Si Ge沟道 ,就避免了只有 SOIPMOSFET采用 Si Ge沟道带来的选择性生长 Si Ge层的麻烦。采用二维工艺模拟得到了器件的结构 ,并以此结构参数进行了器件模拟。模拟结果表明 ,N沟和 P沟两种 MOSFET的驱动电流都有所增加 。
文摘FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.
