The surface conductivity of poly [ 2-methoxy-5-(3'-methyl) butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3 and H2SO4 by chemical method and implanted by N^+ ions was studied and the comparison of ...The surface conductivity of poly [ 2-methoxy-5-(3'-methyl) butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3 and H2SO4 by chemical method and implanted by N^+ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N^+ ions were in the rang 15~35 keV and 3. 8×10^15~9. 6×10^16 ions/cm^2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N^+ ions. For example, the conductivity of PMOMBOPV film was 3. 2×10^-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9. 6 × 10^14 ions/cm^2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.展开更多
A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in...A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer,are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system.The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.展开更多
Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into Zn...Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into ZnO nanorod arrays for photoelectrochemical water splitting in visible light. X-ray diffraction (XRD) and X-ray photo-electron spectroscopy (XPS) results revealed that Cu^+ together with a small amount of Cu^2+ were highly dispersed within the ZnO nanorod arrays. The Cu ion doped ZnO nanorod arrays displayed extended optical absorption and enhanced photoelectrochemical performance under visible light illumination (A 〉 420 nm). A considerable photocurrent density of 18 μA/cm^2 at 0.8 V (vs. a saturated calomel electrode) was achieved, which was about 11 times higher than that of undoped ZnO nanorod arrays. This study proposes that ion implantation could be an effective approach for developing novel visible-light-driven photocatalytic materials for water splitting.展开更多
Recently,research on two-dimensional(2D)semiconductors has begun to translate from the fundamen-tal investigation into rudimentary functional circuits.In this work,we unveil the first functional MoS2 artificial neural...Recently,research on two-dimensional(2D)semiconductors has begun to translate from the fundamen-tal investigation into rudimentary functional circuits.In this work,we unveil the first functional MoS2 artificial neural network(ANN)chip,including multiply-and-accumulate(MAC),memory and activation function circuits.Such MoS2 ANN chip is realized through fabricating 818 field-effect transistors(FETs)on a wafer-scale and high-homogeneity MoS2 film,with a gate-last process to realize top gate structured FETs.A 62-level simulation program with integrated circuit emphasis(SPICE)model is utilized to design and optimize our analog ANN circuits.To demonstrate a practical application,a tactile digit sensing recognition was demonstrated based on our ANN circuits.After training,the digit recognition rate exceeds 97%.Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale inte-grated circuits,but also paves the way for its future application in AI computation.展开更多
Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(...Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.展开更多
The effect of total dissolved gas (TDG) supersaturation on fish living downstream of dams is one of the main ecological risks of high dam construction. A strategy for mitigating the negative effects is needed urgent...The effect of total dissolved gas (TDG) supersaturation on fish living downstream of dams is one of the main ecological risks of high dam construction. A strategy for mitigating the negative effects is needed urgently since many high dams are under construction in the upper reaches of the Yangtze River in China. Experiments on the hatching process of David's schizothoracin were carried out and the results show that the hatching rate decreased with increasing TDG levels, and that most eggs hatched within a very short time in the higher TDG saturation groups. By using a stereomicroscope, damages to the head, yolk sac, body, anus, etc. were found in larvae which hatched in TDG supersaturated water. Results show that the lesion rate increased with increasing TDG levels. Furthermore, 7-d-old David's schizothoracin were exposed to TDG supersaturated water levels of 100%, 105%, 110%, 115%, 120%, 125%, 130%, 135%, and 140% for testing their tolerance to TDG supersaturation. We found that the median lethal concentrations (LC50) for 13, 14, 20, 35, 52, 73, and 96 h exposure were 138%, 138%, 134%, 130%, 129%, 128%, and 126%, respectively. The median lethal times (LTs0) were 7.49, 11.04, 19.25, and 35.38 h for exposure to water with TDG levels of 145%, 140%, 135%, and 130%, respectively.展开更多
基金National Natural Science Foundation of China (60277002) Scientific Research Foundation of Xi’an JiaotongUniversity
文摘The surface conductivity of poly [ 2-methoxy-5-(3'-methyl) butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3 and H2SO4 by chemical method and implanted by N^+ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N^+ ions were in the rang 15~35 keV and 3. 8×10^15~9. 6×10^16 ions/cm^2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N^+ ions. For example, the conductivity of PMOMBOPV film was 3. 2×10^-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9. 6 × 10^14 ions/cm^2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.
基金Supported by the Zhejiang Provincial Natural Science Foundation under Grant No.Y6100384
文摘A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer,are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system.The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.
基金The authors gratefully acknowledge the financial support of the National Natural Science Foundation of China (Nos. 51102194, 51323011, and 51121092), the Doctoral Program of the Ministry of Education (No. 20110201120040) and the Nano Research Program of Suzhou City (ZXG2013003). S. Shen is supported by the Foundation for the Author of National Excellent Doctoral Dissertation of China (No. 201335) and the Fundamental Research Funds for the Central Universities.
文摘Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into ZnO nanorod arrays for photoelectrochemical water splitting in visible light. X-ray diffraction (XRD) and X-ray photo-electron spectroscopy (XPS) results revealed that Cu^+ together with a small amount of Cu^2+ were highly dispersed within the ZnO nanorod arrays. The Cu ion doped ZnO nanorod arrays displayed extended optical absorption and enhanced photoelectrochemical performance under visible light illumination (A 〉 420 nm). A considerable photocurrent density of 18 μA/cm^2 at 0.8 V (vs. a saturated calomel electrode) was achieved, which was about 11 times higher than that of undoped ZnO nanorod arrays. This study proposes that ion implantation could be an effective approach for developing novel visible-light-driven photocatalytic materials for water splitting.
基金the National Key Research and Development Program of China(2016YFA0203900,2018YFB2202500)Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00077)+3 种基金Shanghai Municipal Science and Technology Commission(18JC1410300,21DZ1100900)Research Grant Council of Hong Kong(15205619)the National Natural Science Foundation of China(61925402,61934008,and 6210030233)the Natural Science Foundation of Shanghai(21ZR1405700)。
文摘Recently,research on two-dimensional(2D)semiconductors has begun to translate from the fundamen-tal investigation into rudimentary functional circuits.In this work,we unveil the first functional MoS2 artificial neural network(ANN)chip,including multiply-and-accumulate(MAC),memory and activation function circuits.Such MoS2 ANN chip is realized through fabricating 818 field-effect transistors(FETs)on a wafer-scale and high-homogeneity MoS2 film,with a gate-last process to realize top gate structured FETs.A 62-level simulation program with integrated circuit emphasis(SPICE)model is utilized to design and optimize our analog ANN circuits.To demonstrate a practical application,a tactile digit sensing recognition was demonstrated based on our ANN circuits.After training,the digit recognition rate exceeds 97%.Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale inte-grated circuits,but also paves the way for its future application in AI computation.
基金supported by the National Natural Science Foundation of China(21325416)
文摘Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.
基金Project (No. 50979063) supported by the National Natural Science Foundation of China
文摘The effect of total dissolved gas (TDG) supersaturation on fish living downstream of dams is one of the main ecological risks of high dam construction. A strategy for mitigating the negative effects is needed urgently since many high dams are under construction in the upper reaches of the Yangtze River in China. Experiments on the hatching process of David's schizothoracin were carried out and the results show that the hatching rate decreased with increasing TDG levels, and that most eggs hatched within a very short time in the higher TDG saturation groups. By using a stereomicroscope, damages to the head, yolk sac, body, anus, etc. were found in larvae which hatched in TDG supersaturated water. Results show that the lesion rate increased with increasing TDG levels. Furthermore, 7-d-old David's schizothoracin were exposed to TDG supersaturated water levels of 100%, 105%, 110%, 115%, 120%, 125%, 130%, 135%, and 140% for testing their tolerance to TDG supersaturation. We found that the median lethal concentrations (LC50) for 13, 14, 20, 35, 52, 73, and 96 h exposure were 138%, 138%, 134%, 130%, 129%, 128%, and 126%, respectively. The median lethal times (LTs0) were 7.49, 11.04, 19.25, and 35.38 h for exposure to water with TDG levels of 145%, 140%, 135%, and 130%, respectively.