The microstructural evolution of AZ61 magnesium alloy predeformed by equal channel angular extrusion（ECAE） during semisolid isothermal treatment（SSIT） was investigated by means of optical metalloscopy and image an...The microstructural evolution of AZ61 magnesium alloy predeformed by equal channel angular extrusion（ECAE） during semisolid isothermal treatment（SSIT） was investigated by means of optical metalloscopy and image analysis equipment.The process involved application of ECAE to as-cast alloy at 310 ℃ to induce strain prior to heating in the semisolid region for different time lengths.The results show that extrusion pass,isothermal temperature and processing route have an influence on microstructural evolution of predeformed AZ61 magnesium alloy during SSIT.With the increase of extrusion pass,the solid particle size is reduced gradually.When isothermal temperature increases from 530 ℃ to 560 ℃,the average particle size increases from 22 μm to 35 μm.When isothermal temperature is 575 ℃,the average particle size decreases.The particle size of microstructure of AZ61 magnesium alloy predeformed by ECAE at BC during SSIT is the finest.展开更多
A Mg-8%Al-1%Si alloy with semisolid microstructure was fabricated by isothermal heat treatment process. The effects of isothermal process parameters such as holding temperature and holding time on the microstructure o...A Mg-8%Al-1%Si alloy with semisolid microstructure was fabricated by isothermal heat treatment process. The effects of isothermal process parameters such as holding temperature and holding time on the microstructure of Mg-8%Al-1%Si alloy were investigated. The results show that a non-dendritic microstructure could be obtained by isothermal heat treatment. With increasing holding temperature from 560 to 575 °C or holding time from 5 to 30 min, the liquid volume fraction increases, the average size of α-Mg grains grows larger and globular tendency becomes more obvious. In addition, the Mg2Si phase transforms from Chinese script shape to granule shape. The morphology modification mechanisium of Mg2Si phase in Mg-8%Al-1%Si alloy during the semisolid isothermal heat treatment was also studied.展开更多
A method was developed for determination of chlorine and bromine in plant materials by ion chromatography using temperature programing-semi molten for sample preparation. Values of detection limits of the method found...A method was developed for determination of chlorine and bromine in plant materials by ion chromatography using temperature programing-semi molten for sample preparation. Values of detection limits of the method found were 1.0×10^-5 for CI and 1.3×10^-6 for Br. The measuring range of the method found were 0.3-20.0 mg/L for CI and 4,0-120,0 μg/L for Br. The results obtained agreed quite well with those reference values.展开更多
Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron ...Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP annealed semi insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient.The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed.展开更多
A high characteristic temperature （T0） of 200K from a 1.3μm AlInGaAs/AlInAs single-quantum-well laser diode with the asymmetric waveguide layer structure under CW operation at 20 to 80℃ was obtained,which is the b...A high characteristic temperature （T0） of 200K from a 1.3μm AlInGaAs/AlInAs single-quantum-well laser diode with the asymmetric waveguide layer structure under CW operation at 20 to 80℃ was obtained,which is the best result reported in the laser diodes （LDs） of the same active materials structure and emitting wave- length. AllnGaAs as an active layer,therefore,is very promising for the fabrication of long-wavelength LDs with excellent high-temperature performance. It is found that the asymmetric waveguide layer structure can decrease optical absorption and improve the high-temperature performance and catastrophic optical damage threshold of LDs.展开更多
基金Project(51075099) supported by the National Natural Science Foundation of ChinaProject(E201038) supported by Natural Science Foundation of the Heilongjiang Province,China+3 种基金Project(20090460884) supported by the China Postdoctoral Science Foundation Project(SKLSP201121) supported by the Fund of the State Key Laboratory of Solidification Processing in NWPU,ChinaProject (2011RFQXG010) supported by the Harbin City Young Scientists Foundation,ChinaProject(LBH-T1102) supported by the Specially Postdoctoral Science Foundation of Heilongjiang Province,China
文摘The microstructural evolution of AZ61 magnesium alloy predeformed by equal channel angular extrusion（ECAE） during semisolid isothermal treatment（SSIT） was investigated by means of optical metalloscopy and image analysis equipment.The process involved application of ECAE to as-cast alloy at 310 ℃ to induce strain prior to heating in the semisolid region for different time lengths.The results show that extrusion pass,isothermal temperature and processing route have an influence on microstructural evolution of predeformed AZ61 magnesium alloy during SSIT.With the increase of extrusion pass,the solid particle size is reduced gradually.When isothermal temperature increases from 530 ℃ to 560 ℃,the average particle size increases from 22 μm to 35 μm.When isothermal temperature is 575 ℃,the average particle size decreases.The particle size of microstructure of AZ61 magnesium alloy predeformed by ECAE at BC during SSIT is the finest.
基金Project(2009AA03Z423)supported by the High-tech Research and Development Program of ChinaProject(51071055)supported by the National Natural Science Foundation of ChinaProject(HEUFT05038)supported by the Basic Research Foundation of Harbin Engineering University,China
文摘A Mg-8%Al-1%Si alloy with semisolid microstructure was fabricated by isothermal heat treatment process. The effects of isothermal process parameters such as holding temperature and holding time on the microstructure of Mg-8%Al-1%Si alloy were investigated. The results show that a non-dendritic microstructure could be obtained by isothermal heat treatment. With increasing holding temperature from 560 to 575 °C or holding time from 5 to 30 min, the liquid volume fraction increases, the average size of α-Mg grains grows larger and globular tendency becomes more obvious. In addition, the Mg2Si phase transforms from Chinese script shape to granule shape. The morphology modification mechanisium of Mg2Si phase in Mg-8%Al-1%Si alloy during the semisolid isothermal heat treatment was also studied.
文摘A method was developed for determination of chlorine and bromine in plant materials by ion chromatography using temperature programing-semi molten for sample preparation. Values of detection limits of the method found were 1.0×10^-5 for CI and 1.3×10^-6 for Br. The measuring range of the method found were 0.3-20.0 mg/L for CI and 4,0-120,0 μg/L for Br. The results obtained agreed quite well with those reference values.
文摘Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP annealed semi insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient.The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed.
文摘A high characteristic temperature （T0） of 200K from a 1.3μm AlInGaAs/AlInAs single-quantum-well laser diode with the asymmetric waveguide layer structure under CW operation at 20 to 80℃ was obtained,which is the best result reported in the laser diodes （LDs） of the same active materials structure and emitting wave- length. AllnGaAs as an active layer,therefore,is very promising for the fabrication of long-wavelength LDs with excellent high-temperature performance. It is found that the asymmetric waveguide layer structure can decrease optical absorption and improve the high-temperature performance and catastrophic optical damage threshold of LDs.
