The reverse osmosis process has been applied in large industrial fields (water treatment, food industry, biotechnology, and ect.). Despite, this progress more investigation are required to optimize the reverse osmos...The reverse osmosis process has been applied in large industrial fields (water treatment, food industry, biotechnology, and ect.). Despite, this progress more investigation are required to optimize the reverse osmosis process. The present paper deals the modeling of mass transfer in a cavity limited by a semi-permeable membrane. Mass conservation and momentum balances are developed, dimensionless and control volume method has been applied. The velocity and concentration profiles versus the Reynolds number and Sherwood are studied. The results show that the permeability of the membrane decreases as function of the transversal (radial) component of the velocity. The axial (tangential) component of the velocity presents a good stability along the thickness of the cavity; this phenomenon can be attributed to the zero gradient of the tangential velocity. These preliminary results show that the phenomenon of the concentration polarization affects the mass transfer coefficient in a channel. Current study has considered the cavity without a promoter of the turbulence; whereas, the design of the spacer has an important role on mass transfer coefficient in the reverse osmosis module. Our next interest is the integration of the spacer in the cavity, and the study of the effect of its design on the concentration and velocity profiles and the mass transfer coefficient through the reverse osmosis membrane.展开更多
On the basis of free-electronic bands, the Fermi energy is calculated by summing the band eigenvalues over Brillouin-zones ,and the results may lead to understand the physical basis of the average-bond-energy model in...On the basis of free-electronic bands, the Fermi energy is calculated by summing the band eigenvalues over Brillouin-zones ,and the results may lead to understand the physical basis of the average-bond-energy model in the calculation of valence-band offsets.展开更多
The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric func...The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.展开更多
For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied ...For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.展开更多
文摘The reverse osmosis process has been applied in large industrial fields (water treatment, food industry, biotechnology, and ect.). Despite, this progress more investigation are required to optimize the reverse osmosis process. The present paper deals the modeling of mass transfer in a cavity limited by a semi-permeable membrane. Mass conservation and momentum balances are developed, dimensionless and control volume method has been applied. The velocity and concentration profiles versus the Reynolds number and Sherwood are studied. The results show that the permeability of the membrane decreases as function of the transversal (radial) component of the velocity. The axial (tangential) component of the velocity presents a good stability along the thickness of the cavity; this phenomenon can be attributed to the zero gradient of the tangential velocity. These preliminary results show that the phenomenon of the concentration polarization affects the mass transfer coefficient in a channel. Current study has considered the cavity without a promoter of the turbulence; whereas, the design of the spacer has an important role on mass transfer coefficient in the reverse osmosis module. Our next interest is the integration of the spacer in the cavity, and the study of the effect of its design on the concentration and velocity profiles and the mass transfer coefficient through the reverse osmosis membrane.
文摘On the basis of free-electronic bands, the Fermi energy is calculated by summing the band eigenvalues over Brillouin-zones ,and the results may lead to understand the physical basis of the average-bond-energy model in the calculation of valence-band offsets.
基金supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900)the 973 project of the Ministry of Science and Technology of China (Grant No. 2011CBA00107)+4 种基金the Hi-tech Research Project (Grant No. 2011AA03A103)the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063, 61071009, and 61027008)the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20090091110040)the Natural Science of Foundation of Jiangsu province (Grant Nos. BK2011010, BK2010385, and BK2010178)the Fok Ying-Tong Education Foundation (Grant No. 122028)
文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.
基金supported by the Natural Science Foundation of Gansu Province,China(Grant No.145RJZA226)Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2013-35)Beijing Municipal Commission of Science and Technology(Grant Nos.Z131100006013005 and Z131100006013004)
文摘For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.