The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi- tion process. The temperature dependent el...The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi- tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [0112] and the electric con- ductance of the nanowires had a strong temperature dependence.展开更多
文摘The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi- tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [0112] and the electric con- ductance of the nanowires had a strong temperature dependence.
