A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was pr...A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.展开更多
This paper is standing on the recent viewpoint originated from relevant industrial practices that well or-ganized tracing, representing and feedback(TRF) mechanism of material-flow information is crucial for system ut...This paper is standing on the recent viewpoint originated from relevant industrial practices that well or-ganized tracing, representing and feedback(TRF) mechanism of material-flow information is crucial for system utility and usability of manufacturing execution systems(MES), essentially, for activities on the side of multi-level decision making and optimization mainly in the planning and scheduling. In this paper, we investigate a key issue emphasized on a route of multi-level information evolution on the side of large-scale feedback, where material-flow states could evolve from the measuring data(local states) to networked event-type information cells(global states) and consequently to the key performance indicators(KPI) type information(gross states). Importantly, with adapta-bilities to frequent structural dynamics residing in running material flows, this evolving route should be modeled as a suit of sophisticated mechanism for large-scale dynamic states tracking and representing so as to upgrade accu-racy and usability of the feedback information in MES. To clarify inherent complexities of this evolving route, the investigated issue is demonstrated from extended process systems engineering(PSE) point of view, and the TRF principles of the multi-level feedback information(states) are highlighted under the multi-scale methodology. As the main contribution, a novel mechanism called TRF modeling mechanism is introduced.展开更多
文摘A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.
基金Supported by the National Basic Research Program of China(2012CB720500)the National High Technology Research and Development Program of China(2012AA041102)
文摘This paper is standing on the recent viewpoint originated from relevant industrial practices that well or-ganized tracing, representing and feedback(TRF) mechanism of material-flow information is crucial for system utility and usability of manufacturing execution systems(MES), essentially, for activities on the side of multi-level decision making and optimization mainly in the planning and scheduling. In this paper, we investigate a key issue emphasized on a route of multi-level information evolution on the side of large-scale feedback, where material-flow states could evolve from the measuring data(local states) to networked event-type information cells(global states) and consequently to the key performance indicators(KPI) type information(gross states). Importantly, with adapta-bilities to frequent structural dynamics residing in running material flows, this evolving route should be modeled as a suit of sophisticated mechanism for large-scale dynamic states tracking and representing so as to upgrade accu-racy and usability of the feedback information in MES. To clarify inherent complexities of this evolving route, the investigated issue is demonstrated from extended process systems engineering(PSE) point of view, and the TRF principles of the multi-level feedback information(states) are highlighted under the multi-scale methodology. As the main contribution, a novel mechanism called TRF modeling mechanism is introduced.
