A simulation of stratification and penetration was performed over a range of structural parameters that included screen width, aperture size, inclination angle, and wire diameter. The discrete element method （DEM） w...A simulation of stratification and penetration was performed over a range of structural parameters that included screen width, aperture size, inclination angle, and wire diameter. The discrete element method （DEM） was used for the simulations. The terms stratification and penetration are defined and the change in fine panicle concentration is discussed. Mathematical models relating fine particle ratio to time are established using the least squares method. The effect of structural parameters on fine panicle ratio is analyzed. Stratification and penetration rate are discussed by considering the time derivative of the fine panicle ratio. The conclusions are： an increase in inclination or wire diameter has a positive effect on par- ticle stratifying; The optimal screen width is 40 mm for panicle stratification; The inclination angle has a negative effect on the penetration; The effect of wire diameter and screen width on the penetration rate is negligible.展开更多
Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the...Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.展开更多
基金the Special Topic Fund of Key Science and Technology of Fujian Province (No. 2006HZ0002-2) for the financial support
文摘A simulation of stratification and penetration was performed over a range of structural parameters that included screen width, aperture size, inclination angle, and wire diameter. The discrete element method （DEM） was used for the simulations. The terms stratification and penetration are defined and the change in fine panicle concentration is discussed. Mathematical models relating fine particle ratio to time are established using the least squares method. The effect of structural parameters on fine panicle ratio is analyzed. Stratification and penetration rate are discussed by considering the time derivative of the fine panicle ratio. The conclusions are： an increase in inclination or wire diameter has a positive effect on par- ticle stratifying; The optimal screen width is 40 mm for panicle stratification; The inclination angle has a negative effect on the penetration; The effect of wire diameter and screen width on the penetration rate is negligible.
基金supported by the National Natural Science Foundation of China(Nos.61274113,61404091,61505144,51502203 and 51502204)the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciencesthe Tianjin Natural Science Foundation(Nos.14JCZDJC31500 and 14JCQNJC00800)
文摘Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.
