Gallium oxide(Ga_2O_3) films were deposited on singlecrystalline sapphire(0001) substrate by radio frequency(RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the ...Gallium oxide(Ga_2O_3) films were deposited on singlecrystalline sapphire(0001) substrate by radio frequency(RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga_2O_3 films were investigated in detail using X-ray diffractometer(XRD) and scanning electron microscope(SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure(β-Ga_2O_3). Structure analysis reveals a clear out-of-plane orientation of β-Ga_2O_3(201) || Al_2O_3(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared(UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga_2O_3 film can be used in the UV optoelectronic devices.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61274113,61404091,61505144,51502203 and 51502204)the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciencesthe Tianjin Natural Science Foundation(Nos.14JCZDJC31500 and 14JCQNJC00800)
文摘Gallium oxide(Ga_2O_3) films were deposited on singlecrystalline sapphire(0001) substrate by radio frequency(RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga_2O_3 films were investigated in detail using X-ray diffractometer(XRD) and scanning electron microscope(SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure(β-Ga_2O_3). Structure analysis reveals a clear out-of-plane orientation of β-Ga_2O_3(201) || Al_2O_3(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared(UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga_2O_3 film can be used in the UV optoelectronic devices.
