Orthorhombic HoMnO 3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO 3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions....Orthorhombic HoMnO 3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO 3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions.X-ray diffraction and atomic force microscopy were then used to characterize the films.The temperature dependent current-voltage measurement displayed diode-like rectifying behavior,and the forward current was perfectly fitted using the thermionic emission model.The ideality factor and built-in potential were suggested.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 10704065)Shandong Excellent Young Scientist Science Foundation (Grant No. 2006BS01235)the Natural Science Funds of Shandong Province for Distinguished Young Scholar (Grant No. JQ200802)
文摘Orthorhombic HoMnO 3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO 3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions.X-ray diffraction and atomic force microscopy were then used to characterize the films.The temperature dependent current-voltage measurement displayed diode-like rectifying behavior,and the forward current was perfectly fitted using the thermionic emission model.The ideality factor and built-in potential were suggested.
