近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究...近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究大束流,高剂量的氮离子或氧离子注入单晶硅形成的SOI材料,用于确定表面层硅的辐照损伤和氮化硅或氧化硅埋层剖面的显微结构。注N^+SOI试样的制备,采用Φ50毫米的硅晶片(n型、3～6Ωcm,<110>)注入能量为190kev,剂量为1.8×10_1^(18)N^+/厘米~2,N^+束流密度为50微安/厘米~2.展开更多
A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a ...A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.展开更多
文摘近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究大束流,高剂量的氮离子或氧离子注入单晶硅形成的SOI材料,用于确定表面层硅的辐照损伤和氮化硅或氧化硅埋层剖面的显微结构。注N^+SOI试样的制备,采用Φ50毫米的硅晶片(n型、3～6Ωcm,<110>)注入能量为190kev,剂量为1.8×10_1^(18)N^+/厘米~2,N^+束流密度为50微安/厘米~2.
基金ACKN0WLEDGMENT This work was supported by the National Natural Science Foundation of China （No.20576112）.
文摘A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.
